公开(公告)号：US20220293171A1

公开(公告)日：2022-09-15

申请号：US17459467

申请日：2021-08-27

Applicant: KIOXIA CORPORATION

Inventor： Masahiko NAKAYAMA ,  Kazumasa SUNOUCHI ,  Jyunichi OZEKI

IPC: G11C13/00 ,  G11C5/06

Abstract: According to one embodiment, a storage device includes first wirings extending in a first direction and second wirings extending in a second direction. A memory cells are connected between the first wirings and the second wirings and include a variable resistance memory element. A first drive circuit is provided for supplying voltages to the first wirings, and a second drive circuit is provided for supplying voltages to the second wirings. The first drive circuit applies a first voltage to a selected first wiring, the second drive circuit applies a second voltage to a selected second wiring. A voltage between the second voltage and one-half of the sum of the first and second voltages is applied to a non-selected first wiring, and a voltage between the first voltage and one-half of the sum of the first and second voltages is applied to a non-selected second wiring.