公开(公告)号：US20210020439A1

公开(公告)日：2021-01-21

申请号：US16803194

申请日：2020-02-27

Applicant: KIOXIA CORPORATION

Inventor： Soichi YAMAZAKI ,  Kazuhito FURUMOTO ,  Kosuke HORIBE ,  Keisuke KIKUTANI ,  Atsuko SAKATA

IPC: H01L21/033 ,  H01L21/3213 ,  H01L21/311

Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The second film includes fluoride of a first metal element having a first boiling point of 800° C. or higher and fluoride of a second metal element having a second boiling point of 800° C. or higher. The second metal element is different from the first metal element. The method further includes etching the first film using the second film as an etching mask and etching gas that includes fluorine.