公开(公告)号：US20210335610A1

公开(公告)日：2021-10-28

申请号：US17184828

申请日：2021-02-25

Applicant: Kioxia Corporation

Inventor： Kei WATANABE ,  Toshiyuki SASAKI ,  Soichi YAMAZAKI ,  Shunsuke OCHIAI ,  Yuya MATSUBARA

IPC: H01L21/033

Abstract: A method for producing a semiconductor device includes forming, on a substrate, a film to be processed. The method further includes forming, on the film to be processed, a first film containing a metallic element and a second film containing at least one of carbon or boron. The method further includes forming an insulating film on the first and second films. The method further includes processing the film to be processed using the first film, the second film, and the insulating film, as a mask.

公开(公告)号：US20210287903A1

公开(公告)日：2021-09-16

申请号：US17004216

申请日：2020-08-27

Applicant: Kioxia Corporation

Inventor： Takehiro KONDOH ,  Junichi HASHIMOTO ,  Soichi YAMAZAKI ,  Yuya MATSUBARA

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/308

Abstract: A method for manufacturing a semiconductor device includes: forming a first film on a substrate; forming a second film containing at least carbon on the first film; forming a hole in the second film; and forming a recess, which communicates with the hole, in the first film by etching using the second film as a mask. In this method, the second film includes a first layer formed on the first film, and a second layer formed on the first layer. The first layer having a higher oxygen concentration than the second layer.

公开(公告)号：US20220301884A1

公开(公告)日：2022-09-22

申请号：US17462366

申请日：2021-08-31

Applicant: KIOXIA CORPORATION

Inventor： Yusuke KONDO ,  Soichi YAMAZAKI

IPC: H01L21/311 ,  H01L27/115 ,  H01J37/32 ,  C23C14/04 ,  C23C14/34 ,  C23C14/06

Abstract: A film forming apparatus includes an electrode, a target holder configured to hold a film forming target so as to face the electrode, and a masking shield holder configured to hold a masking shield between the electrode and the target holder. The masking shield includes a lattice portion having a plurality of openings therein and a frame portion supporting the lattice portion.

公开(公告)号：US20210066090A1

公开(公告)日：2021-03-04

申请号：US16806622

申请日：2020-03-02

Applicant: KIOXIA CORPORATION

Inventor： Junichi HASHIMOTO ,  Kaori NARUMIYA ,  Kosuke HORIBE ,  Soichi YAMAZAKI ,  Kei WATANABE ,  Yusuke KONDO ,  Mitsuhiro OMURA ,  Takehiro KONDOH ,  Yuya MATSUBARA ,  Junya FUJITA ,  Toshiyuki SASAKI

IPC: H01L21/311 ,  H01L21/033 ,  H01L27/11556 ,  H01L27/11582

Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes forming a recess in the first film using the second film as a mask. The second film includes a first layer having carbon and a second layer having carbon formed on the first layer. The second layer has a second carbon density lower than a first carbon density of the first layer.

公开(公告)号：US20210020439A1

公开(公告)日：2021-01-21

申请号：US16803194

申请日：2020-02-27

Applicant: KIOXIA CORPORATION

Inventor： Soichi YAMAZAKI ,  Kazuhito FURUMOTO ,  Kosuke HORIBE ,  Keisuke KIKUTANI ,  Atsuko SAKATA

IPC: H01L21/033 ,  H01L21/3213 ,  H01L21/311

Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The second film includes fluoride of a first metal element having a first boiling point of 800° C. or higher and fluoride of a second metal element having a second boiling point of 800° C. or higher. The second metal element is different from the first metal element. The method further includes etching the first film using the second film as an etching mask and etching gas that includes fluorine.