公开(公告)号：US20210151372A1

公开(公告)日：2021-05-20

申请号：US16951584

申请日：2020-11-18

Applicant: Kioxia Corporation

Inventor： Shinya OKUDA ,  Kei WATANABE ,  Kosuke HORIBE

IPC: H01L23/528 ,  H01L23/532 ,  H01L21/768 ,  H01L23/00

Abstract: In one embodiment, the semiconductor device includes a first insulator including Si (silicon) and O (oxygen). The device further includes a first interconnect provided in the first insulator and including a metal element. The device further includes a second insulator provided on the first insulator and the first interconnect and including Si, C (carbon) and N (nitrogen), content of Si—H groups (H represents hydrogen) in the second insulator being 6.0% or less, content of Si—CH3 groups in the second insulator being 0.5% or less. The device further includes a second interconnect provided on the first interconnect in the second insulator and including the metal element.

公开(公告)号：US20220293529A1

公开(公告)日：2022-09-15

申请号：US17471059

申请日：2021-09-09

Applicant: Kioxia Corporation

Inventor： Kosuke HORIBE ,  Kei WATANABE ,  Shinya OKUDA

IPC: H01L23/532 ,  H01L27/11582 ,  H01L21/768

Abstract: A semiconductor device includes: a stacking part in which the plurality of conductor layers are separately stacked in a z direction; a stair part that is arranged alongside the stacking part in a y direction and in which the plurality of conductor layers are extended in the y direction in a stair shape; a first insulating film covering at least part of the stair part; a second insulating film covering at least part of the first insulating film and different from the first insulating film; and a contact connected with one of the plurality of conductor layers and penetrating through the first insulating film and the second insulating film. The linear expansion coefficient of the second insulating film is larger than the linear expansion coefficient of the first insulating film.

公开(公告)号：US20210066090A1

公开(公告)日：2021-03-04

申请号：US16806622

申请日：2020-03-02

Applicant: KIOXIA CORPORATION

Inventor： Junichi HASHIMOTO ,  Kaori NARUMIYA ,  Kosuke HORIBE ,  Soichi YAMAZAKI ,  Kei WATANABE ,  Yusuke KONDO ,  Mitsuhiro OMURA ,  Takehiro KONDOH ,  Yuya MATSUBARA ,  Junya FUJITA ,  Toshiyuki SASAKI

IPC: H01L21/311 ,  H01L21/033 ,  H01L27/11556 ,  H01L27/11582

Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes forming a recess in the first film using the second film as a mask. The second film includes a first layer having carbon and a second layer having carbon formed on the first layer. The second layer has a second carbon density lower than a first carbon density of the first layer.

公开(公告)号：US20210020439A1

公开(公告)日：2021-01-21

申请号：US16803194

申请日：2020-02-27

Applicant: KIOXIA CORPORATION

Inventor： Soichi YAMAZAKI ,  Kazuhito FURUMOTO ,  Kosuke HORIBE ,  Keisuke KIKUTANI ,  Atsuko SAKATA

IPC: H01L21/033 ,  H01L21/3213 ,  H01L21/311

Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The second film includes fluoride of a first metal element having a first boiling point of 800° C. or higher and fluoride of a second metal element having a second boiling point of 800° C. or higher. The second metal element is different from the first metal element. The method further includes etching the first film using the second film as an etching mask and etching gas that includes fluorine.