公开(公告)号：US20220302055A1

公开(公告)日：2022-09-22

申请号：US17461550

申请日：2021-08-30

Applicant: KIOXIA CORPORATION

Inventor： Kotaro FUJII ,  Shinya WATANABE

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/18 ,  H01L25/00

Abstract: According to one or more embodiments, a semiconductor device includes a first substrate and a second substrate. The first substrate includes a first metal layer and a first insulating layer. The first insulating layer surrounds the first metal layer. The second substrate includes a second metal layer, a second insulating layer, and a first conducive body. The second metal layer is in contact with the first metal layer. The second insulating layer surrounds the second metal layer and is in contact with the first insulating layer. A part of the first conductive body is in the second metal layer and extends in a first direction toward the first metal layer.

公开(公告)号：US20240096795A1

公开(公告)日：2024-03-21

申请号：US18182529

申请日：2023-03-13

Applicant: Kioxia Corporation

Inventor： Kotaro FUJII

IPC: H01L23/528 ,  H01L23/522 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35

CPC classification number: H01L23/5283 ,  H01L23/5226 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35

Abstract: A semiconductor storage device according to an embodiment includes a first wiring, a second wiring, a first insulating layer, a first insulator, and a conductor. The first insulating layer has a first portion, a second portion, and a third portion. The first portion is stacked on the first wiring. The second portion is stacked on the second wiring. The third portion is on the opposite side of the first wiring and the second wiring with respect to the first portion and the second portion.