MAGNETIC MEMORY
    1.
    发明申请

    公开(公告)号:US20220077383A1

    公开(公告)日:2022-03-10

    申请号:US17196737

    申请日:2021-03-09

    Abstract: A magnetic memory according to an embodiment includes: a first wiring and a second wiring; a nonmagnetic conductor extending in a first direction; a first magnetic member including a first portion electrically connected to the first wiring and a second portion electrically connected to the second wiring, the first magnetic member extending in the first direction from the first portion to the second portion to surround the nonmagnetic conductor; an insulation portion disposed between the nonmagnetic conductor and the first magnetic member; and a controller electrically connected to the nonmagnetic conductor, the first wiring, and the second wiring.

    STORAGE DEVICE
    3.
    发明申请

    公开(公告)号:US20230093157A1

    公开(公告)日:2023-03-23

    申请号:US17684331

    申请日:2022-03-01

    Abstract: A storage device includes a first electrode, a second electrode, and a resistance change storage layer between the first and second electrodes. The storage layer is either in a first resistance state or in a second resistance state having a resistance higher than the first resistance state and contains at least two elements selected from a group consisting of germanium, antimony, and tellurium. The storage device further includes an interface layer between the first electrode and the resistance change storage layer. The interface layer contains at least one of the elements of the resistance change storage layer and includes a conductive region and an insulating region.

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