公开(公告)号：US20230413584A1

公开(公告)日：2023-12-21

申请号：US18231304

申请日：2023-08-08

Applicant: Kioxia Corporation

Inventor： Takahiko IIZUKA ,  Daisaburo TAKASHIMA ,  Ryu OGIWARA ,  Rieko FUNATSUKI ,  Yoshiki KAMATA ,  Misako MOROTA ,  Yoshiaki ASAO ,  Yukihiro NOMURA

IPC: H10B63/00 ,  G11C13/00 ,  H10N70/00 ,  H10N70/20

CPC classification number: H10B63/845 ,  G11C13/0004 ,  G11C13/003 ,  G11C13/004 ,  G11C2213/75 ,  H10B63/34 ,  H10N70/066 ,  H10N70/231 ,  H10N70/8828 ,  G11C13/0069

Abstract: A memory device includes: a first interconnect; a second interconnect; a first string and a second string whose first ends are coupled to the first interconnect; a third string and a fourth string whose second ends are coupled to the second interconnect; a third interconnect; and driver. The third interconnect is coupled to second ends of the first and second strings and to first ends of the third and fourth strings. Each of the first, second, third, and fourth strings includes a first switch element and a memory cell coupled in series. The memory cell includes a second switch element and a resistance change element coupled in parallel. The third interconnect is coupled to the driver via the first interconnect or the second interconnect.

公开(公告)号：US20230093157A1

公开(公告)日：2023-03-23

申请号：US17684331

申请日：2022-03-01

Applicant: KIOXIA CORPORATION

Inventor： Shigeyuki HIRAYAMA ,  Takayuki SASAKI ,  Yukihiro NOMURA ,  Tsunehiro INO

IPC: H01L45/00 ,  H01L27/24

Abstract: A storage device includes a first electrode, a second electrode, and a resistance change storage layer between the first and second electrodes. The storage layer is either in a first resistance state or in a second resistance state having a resistance higher than the first resistance state and contains at least two elements selected from a group consisting of germanium, antimony, and tellurium. The storage device further includes an interface layer between the first electrode and the resistance change storage layer. The interface layer contains at least one of the elements of the resistance change storage layer and includes a conductive region and an insulating region.

公开(公告)号：US20220310918A1

公开(公告)日：2022-09-29

申请号：US17410771

申请日：2021-08-24

Applicant: KIOXIA CORPORATION

Inventor： Takayuki SASAKI ,  Yukihiro NOMURA

IPC: H01L45/00 ,  H01L27/24 ,  G11C13/00

Abstract: A storage device includes a resistance change memory element including a first electrode, a second electrode, a resistance change layer between the first and second electrodes, including at least two elements selected from a group consisting of germanium (Ge), antimony (Sb), and tellurium (Te), and having a crystal structure with a c-axis oriented in a first direction from the first electrode toward the second electrode, and a first layer between the first electrode and the resistance change layer and including nitrogen (N) and at least one of silicon (Si) or germanium (Ge).

公开(公告)号：US20220093685A1

公开(公告)日：2022-03-24

申请号：US17346478

申请日：2021-06-14

Applicant: Kioxia Corporation

Inventor： Yoshiki KAMATA ,  Misako MOROTA ,  Yukihiro NOMURA ,  Yoshiaki ASAO

IPC: H01L27/24 ,  H01L27/11507 ,  H01L27/11514

Abstract: A semiconductor memory device, includes: a stack including a wiring layer and an insulation layer alternately stacked in a first direction; a semiconductor layer including a first region overlapping with the insulation layer in a second direction, and a second region overlapping with the wiring layer in the second direction; an insulation region between the wiring layer and the second region; and a memory region on the opposite side of the second region from the wiring layer. The wiring layer is farther from the first region in the second direction than the insulation layer is. The second region has a part between the insulation layers in the first direction and protruding further toward the wiring layer than the first region in the second direction. The memory region has a face opposite to the second region and closer to the wiring layer in the second direction than the first region is.

公开(公告)号：US20230102229A1

公开(公告)日：2023-03-30

申请号：US17693935

申请日：2022-03-14

Applicant: Kioxia Corporation

Inventor： Yoshiki KAMATA ,  Yoshiaki ASAO ,  Yukihiro NOMURA ,  Misako MOROTA ,  Daisaburo TAKASHIMA ,  Takahiko IIZUKA ,  Shigeru KAWANAKA

IPC: G11C13/00 ,  G11C5/06 ,  H01L27/24 ,  H01L45/00

Abstract: According to one embodiment, a memory device includes a stacked structure including a plurality of conductive layers stacked to be apart from each other in a first direction, and a pillar structure including a resistance change portion extending in the first direction in the stacked structure, and a semiconductor portion which extends in the first direction in the stacked structure and which includes a first portion provided along the resistance change portion and a second portion extending from the first portion in at least one direction intersecting the first direction.

公开(公告)号：US20220393106A1

公开(公告)日：2022-12-08

申请号：US17679948

申请日：2022-02-24

Applicant: KIOXIA CORPORATION

Inventor： Masahiro TAKAHASHI ,  Yoshiaki ASAO ,  Yukihiro NOMURA ,  Daisaburo TAKASHIMA

IPC: H01L45/00 ,  H01L27/24 ,  G11C13/00

Abstract: A semiconductor storage device includes a memory cell including a core portion that extends in a first direction above a semiconductor substrate; a variable resistance layer that extends in the first direction and is in contact with the core portion; a semiconductor layer that extends in the first direction and is in contact with the variable resistance layer; a first insulator layer that extends in the first direction and is in contact with the semiconductor layer; and a first voltage applying electrode that extends in a second direction orthogonal to the first direction and is in contact with the first insulator layer. The core portion is a vacuum region, or a region containing inert gas.

公开(公告)号：US20210399049A1

公开(公告)日：2021-12-23

申请号：US17348839

申请日：2021-06-16

Applicant: Kioxia Corporation

Inventor： Takahiko IIZUKA ,  Daisaburo TAKASHIMA ,  Ryu OGIWARA ,  Rieko FUNATSUKI ,  Yoshiki KAMATA ,  Misako MOROTA ,  Yoshiaki ASAO ,  Yukihiro NOMURA

IPC: H01L27/24 ,  H01L45/00 ,  G11C13/00

Abstract: A memory device includes: a first interconnect; a second interconnect; a first string and a second string whose first ends are coupled to the first interconnect; a third string and a fourth string whose second ends are coupled to the second interconnect; a third interconnect; and driver. The third interconnect is coupled to second ends of the first and second strings and to first ends of the third and fourth strings. Each of the first, second, third, and fourth strings includes a first switch element and a memory cell coupled in series. The memory cell includes a second switch element and a resistance change element coupled in parallel. The third interconnect is coupled to the driver via the first interconnect or the second interconnect.

公开(公告)号：US20210296400A1

公开(公告)日：2021-09-23

申请号：US17125126

申请日：2020-12-17

Applicant: Kioxia Corporation

Inventor： Tsunehiro INO ,  Yukihiro NOMURA ,  Kazuhiko YAMAMOTO ,  Koji USUDA

IPC: H01L27/24 ,  H01L45/00

Abstract: A memory device of an embodiment includes: a first conductive layer; a second conductive layer; a resistance change region provided between the first conductive layer and the second conductive layer; a first region provided between the resistance change region and the first conductive layer, the first region including a first element selected from the group consisting of niobium, vanadium, tantalum, and titanium, and a second element selected from the group consisting of oxygen, sulfur, selenium, and tellurium, the first region having a first atomic ratio of the first element to the second element; and a second region provided between the first region and the resistance change region, the second region including the first element and the second element, the second region having a second atomic ratio of the first element to the second element, the second atomic ratio being smaller than the first atomic ratio.