公开(公告)号：USRE49274E1

公开(公告)日：2022-11-01

申请号：US16284203

申请日：2019-02-25

Applicant: KIOXIA CORPORATION

Inventor： Dai Nakamura ,  Hiroyuki Kutsukake ,  Kenji Gomikawa ,  Takeshi Shimane ,  Mitsuhiro Noguchi ,  Koji Hosono ,  Masaru Koyanagi ,  Takashi Aoi

IPC: G11C16/04 ,  G11C16/24

Abstract: A non-volatile semiconductor storage device includes: a memory cell array having memory cells arranged therein, the memory cells storing data in a non-volatile manner; and a plurality of transfer transistors transferring a voltage to the memory cells, the voltage to be supplied for data read, write and erase operations with respect to the memory cells. Each of the transfer transistors includes: a gate electrode formed on a semiconductor substrate via a gate insulation film; and diffusion layers formed to sandwich the gate electrode therebetween and functioning as drain/source layers. Upper layer wirings are provided above the diffusion layers and provided with a predetermined voltage to prevent depletion of the diffusion layers at least when the transfer transistors become conductive.