公开(公告)号：US20210280438A1

公开(公告)日：2021-09-09

申请号：US17119043

申请日：2020-12-11

Applicant: Kioxia Corporation

Inventor： Katsuhiro SATO ,  Hiroshi FUJITA ,  Yoshinori KITAMURA ,  Satoshi NAKAOKA ,  Tomohiko SUGITA

IPC: H01L21/67 ,  H01L21/306

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a container configured to contain a substrate, and a pipe configured to supply the container with liquid to treat the substrate. The apparatus further includes an ejector including a first passage where the liquid introduced from the pipe and the liquid introduced from the container are joined and pass through, and a first opening configured to eject the liquid that has passed through the first passage. Furthermore, the first passage has an area where a sectional area of the first passage becomes large as advancing downstream in the liquid.

公开(公告)号：US20240087918A1

公开(公告)日：2024-03-14

申请号：US18458034

申请日：2023-08-29

Applicant: Kioxia Corporation

Inventor： Tomohiko SUGITA ,  Hiroshi FUJITA ,  Tatsuhiko KOIDE ,  Katsuhiro SATO

IPC: H01L21/67 ,  H01L21/311

CPC classification number: H01L21/67086 ,  H01L21/31111

Abstract: According to one embodiment, a substrate processing apparatus has a treatment tank, a holder to hold the substrate while in the treatment tank, a chemical discharge pipe below a position of the holder for supplying a chemical solution to the treatment tank, a bubble discharge pipe below the position of the holder for discharging a gas. The first bubble discharge pipe is closer along a horizontal direction to a centerline of the treatment tank than is the chemical discharge pipe. A rectifying plate is disposed below the position of the holder and extends from a position above the chemical discharge pipe to a position above the first bubble discharge pipe at an incline with respect to the first direction horizontal.

公开(公告)号：US20220406626A1

公开(公告)日：2022-12-22

申请号：US17682745

申请日：2022-02-28

Applicant: KIOXIA CORPORATION

Inventor： Tomohiko SUGITA ,  Hiroshi FUJITA ,  Tatsuhiko KOIDE

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/311

Abstract: According to one embodiment, a substrate processing device includes a processing tank to store a liquid and to permit a plurality of substrates to be immersed in the liquid at the same time. The device also has a holder member configured to hold the plurality of substrates while the substrates are immersed into and withdrawn from the liquid in the processing tank as well as a straightening vane configured to be positioned in the liquid above the plurality of substrates in the processing tank. The straightening vane includes vane portions extending in a vertical direction into the processing tank that have a length in the vertical direction that is greater than a cross sectional width in a horizontal direction perpendicular to the vertical direction. A bubble discharge pipe is disposed in the processing tank below the holder member. The bubble discharge pipe discharges gas into the liquid.

公开(公告)号：US20220085153A1

公开(公告)日：2022-03-17

申请号：US17196186

申请日：2021-03-09

Applicant: Kioxia Corporation

Inventor： Fuyuma ITO ,  Tatsuhiko KOIDE ,  Hiroki NAKAJIMA ,  Naomi YANAI ,  Tomohiko SUGITA ,  Hakuba KITAGAWA ,  Takaumi MORITA

IPC: H01L29/06 ,  H01L21/768 ,  H01L27/06 ,  H01L21/02

Abstract: A semiconductor substrate includes a surface having a groove. The groove includes an inner bottom surface and an inner wall surface. The inner wall surface has a depression. The depression has a depth from a direction along a surface of the inner wall surface to a width direction of the groove. The substrate being exposed to the inner wall surface.