Memory system
    2.
    发明授权

    公开(公告)号:US12099735B2

    公开(公告)日:2024-09-24

    申请号:US18176452

    申请日:2023-02-28

    CPC classification number: G06F3/064 G06F3/0607 G06F3/0659 G06F3/0679

    Abstract: A memory system includes a memory controller configured to write data in a first mode to a first block of a first area of a non-volatile memory. The first mode is a write mode for writing data with a first number of bits per memory cell. The memory controller is further configured to execute copy processing on the data written in the first mode to the first block, by writing system data written in the first block to a second block of the first area in the first mode and writing user data written in the first block to a third block of a second area of the non-volatile memory in the second mode. The second mode is a write mode for writing data with a second number of bits larger than the first number of bits per memory cell.

    Memory system
    3.
    发明授权

    公开(公告)号:US12056368B2

    公开(公告)日:2024-08-06

    申请号:US17821960

    申请日:2022-08-24

    Inventor: Tomoyuki Kantani

    CPC classification number: G06F3/0619 G06F3/0629 G06F3/0679

    Abstract: According to one embodiment, a controller identifies a fourth storage location on which a second step program operation is executed last among storage locations of a block and determines whether a condition that a fifth storage location stores unreadable data and each of memory cells of a sixth storage location has a threshold voltage corresponding to an erased state, is satisfied. Among the storage locations, in response to completion of a first step program operation on the fifth storage location, the second step program operation on the fourth storage location has been executed, and the first step program operation on the sixth storage location is to be executed after completion of the second step program operation on the fifth storage location.

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