公开(公告)号：US20210296568A1

公开(公告)日：2021-09-23

申请号：US17003846

申请日：2020-08-26

Applicant: KIOXIA CORPORATION

Inventor： Taichi IGARASHI ,  Tadaomi DAIBOU ,  Junichi ITO ,  Tadashi KAI ,  Shogo ITAI ,  Toshiyuki ENDA

IPC: H01L43/02 ,  H01L27/22 ,  G11C11/16

Abstract: According to one embodiment, a memory device includes a first wiring extending in a first direction, and a second wiring extending in a second direction that intersects the first direction. A memory cell is between the first wiring and the second wiring and includes a resistive memory element and a switching element that are connected in series between the first wiring and the second wiring. An insulating region surrounds side surfaces of the memory cell. The insulating region includes a first insulating part adjacent to a side surface of the resistive memory element and a second insulating part adjacent to a side surface of the switching element. The second insulating part has a higher thermal conductivity than the first insulating part.