公开(公告)号：US20230085722A1

公开(公告)日：2023-03-23

申请号：US17687130

申请日：2022-03-04

Applicant: Kioxia Corporation

Inventor： Jieqiong ZHANG ,  Katsuyoshi KOMATSU ,  Tadaomi DAIBOU ,  Takeshi IWASAKI ,  Hiroki TOKUHIRA ,  Hiroki KAWAI ,  Hiroshi TAKEHIRA

IPC: H01L45/00

Abstract: A semiconductor storage device including a phase change memory film having a composition containing at least Ge, Sb, Te, and Se, and containing Se as a design composition ratio to Te in a composition ratio showing a phase change memory property with at least three elements Ge, Sb, and Te. The composition ratio of Se is 33.6 atom % or less.

公开(公告)号：US20220093851A1

公开(公告)日：2022-03-24

申请号：US17469778

申请日：2021-09-08

Applicant: Kioxia Corporation

Inventor： Hiroshi TAKEHIRA ,  Katsuyoshi KOMATSU ,  Tadaomi DAIBOU ,  Hiroki KAWAI ,  Yuichi ITO

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16 ,  G11C19/08

Abstract: A switching device according to an embodiment includes a switching layer disposed between a first electrode and a second electrode. The switching layer contains a material containing a first cation element Z, Te, and N. This material contains at least 5 atomic % or more of each of Z, Te, and N, and when an atomic ratio of Te is X, an atomic ratio of N is Y, an atomic ratio of Z is W, a ratio of Z2Te3 to ZN on a straight line connecting a compound of the first cation element Z with tellurium and nitride of the first cation element Z in a ternary phase diagram of Z, Te, and N is A, and a change in an N content from the Z2Te3-ZN line is B, the material has a composition satisfying X=1.2 (1−A) (0.5+B), Y=A (0.5+B), and W=1−X−Y, where −0.06≤B≤0.06 is satisfied when ⅓>A and ¾

公开(公告)号：US20240114811A1

公开(公告)日：2024-04-04

申请号：US18460515

申请日：2023-09-01

Applicant: Kioxia Corporation

Inventor： Jieqiong ZHANG ,  Katsuyoshi KOMATSU ,  Tadaomi DAIBOU ,  Yosuke MATSUSHIMA

IPC: H10N70/00 ,  H10B63/00 ,  H10B63/10

CPC classification number: H10N70/841 ,  H10B63/10 ,  H10B63/84 ,  H10N70/881

Abstract: According to one embodiment, a nonvolatile semiconductor memory includes a first electrode and a second electrode spaced from the first electrode. A memory element and a switching element are disposed between the first electrode and the second electrode. The switching element includes a tunnel insulating film enabling carrier tunneling, and the tunnel insulating film includes yttrium and oxygen and at least one of tantalum, titanium, and zirconium Ti, and Zr.

公开(公告)号：US20220238801A1

公开(公告)日：2022-07-28

申请号：US17400912

申请日：2021-08-12

Applicant: Kioxia Corporation

Inventor： Katsuyoshi KOMATSU ,  Takeshi IWASAKI ,  Tadaomi DAIBOU ,  Hiroki KAWAI

IPC: H01L45/00 ,  G11C13/00

Abstract: A semiconductor memory device includes a first electrode and a second electrode, a phase change layer disposed between the first electrode and the second electrode, and a first layer disposed between the first electrode and the phase change layer. The phase change layer contains at least one of germanium (Ge), antimony (Sb), and tellurium (Te). The first layer contains aluminum (Al) and antimony (Sb), or tellurium (Te) and at least one of zinc (Zn), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu).

公开(公告)号：US20240215459A1

公开(公告)日：2024-06-27

申请号：US18476628

申请日：2023-09-28

Applicant: Kioxia Corporation

Inventor： Takeshi IWASAKI ,  Yosuke MATSUSHIMA ,  Makoto ONIZAKI ,  Katsuyoshi KOMATSU ,  Masakazu GOTO ,  Hiroki KAWAI ,  Rina NOMOTO ,  Kenta CHOKAWA ,  Zhu QI ,  Tadaomi DAIBOU

IPC: H10N50/85 ,  H10B61/00 ,  H10N50/20

CPC classification number: H10N50/85 ,  H10B61/00 ,  H10N50/20

Abstract: A memory device of embodiments includes a memory cell including: a first conductive layer; a second conductive layer; a third conductive layer provided between the first conductive layer and the second conductive layer; a variable resistance layer provided between the first conductive layer and the third conductive layer; and a switching layer provided between the third conductive layer and the second conductive layer. The switching layer contains an oxide of a first element, which is at least one element selected from a group consisting of zirconium, yttrium, tantalum, lanthanum, cerium, titanium, hafnium, and magnesium, and a compound of a second element that is at least one element selected from a group consisting of zinc, tin, gallium, indium, and bismuth and a third element that is at least one element selected from a group consisting of tellurium, sulfur, and selenium.

公开(公告)号：US20210202838A1

公开(公告)日：2021-07-01

申请号：US17014587

申请日：2020-09-08

Applicant: Kioxia Corporation

Inventor： Hiroki KAWAI ,  Katsuyoshi KOMATSU ,  Tadaomi DAIBOU ,  Hiroki TOKUHIRA ,  Masatoshi YOSHIKAWA ,  Yuichi ITO

IPC: H01L45/00

Abstract: A resistance variable device of an embodiment includes a stack arranged between a first electrode and a second electrode and including a resistance variable layer and a chalcogen-containing layer. The chalcogen-containing layer contains a material having a composition represented by a general formula: C1xC2yAz, where C1 is at least one element selected from Sc, Y, Zr, and Hf, C2 is at least one element selected from C, Si, Ge, B, Al, Ga, and In, A is at least one element selected from S, Se, and Te, and x, y, and z are numbers representing atomic ratios satisfying 0

公开(公告)号：US20210082999A1

公开(公告)日：2021-03-18

申请号：US16816775

申请日：2020-03-12

Applicant: KIOXIA CORPORATION

Inventor： Masaru TOKO ,  Tadaomi DAIBOU ,  Junichi ITO ,  Taichi IGARASHI ,  Tadashi KAI

IPC: H01L27/22 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16

Abstract: A magnetoresistive memory device according to one embodiment includes: first and second layer stacks, each of which includes: a first ferromagnetic layer having a magnetization directed in a first direction; a non-magnetic first conductive layer above the first ferromagnetic layer, a second ferromagnetic layer provided above the first conductive layer and having a magnetization directed in a second direction different from the first direction, a first insulating layer on an upper surface of the second ferromagnetic layer, and a third ferromagnetic layer above the first insulating layer. The second ferromagnetic layer of the second layer stack is thicker than the second ferromagnetic layer of the first layer stack.

公开(公告)号：US20230085635A1

公开(公告)日：2023-03-23

申请号：US17687944

申请日：2022-03-07

Applicant: Kioxia Corporation

Inventor： Hiroki KAWAI ,  Kasumi YASUDA ,  Hiroki TOKUHIRA ,  Kazuhiro KATONO ,  Akifumi GAWASE ,  Katsuyoshi KOMATSU ,  Tadaomi DAIBOU

IPC: H01L45/00 ,  G11C13/00

Abstract: A resistance change device of an embodiment includes a first electrode, a second electrode, and a layer disposed between the first electrode and the second electrode and containing a resistance change material. In the resistance change device of the embodiment, the resistance change material contains: a first element including Sb and Te; a second element including at least one element selected from the group consisting of Ge and In; a third element including at least one element selected from the group consisting of Si, N, B, C, Al, and Ti; and a fourth element including at least one element selected from the group consisting of Sc, Y, La, Gd, Zr, and Hf.

公开(公告)号：US20220302383A1

公开(公告)日：2022-09-22

申请号：US17460898

申请日：2021-08-30

Applicant: Kioxia Corporation

Inventor： Jieqiong ZHANG ,  Masatoshi YOSHIKAWA ,  Tadaomi DAIBOU

IPC: H01L45/00 ,  H01L27/24

Abstract: According to one embodiment, a selector device includes a first electrode, a second electrode, and a selector layer disposed between the first electrode and the second electrode. At least one of the first electrode or the second electrode includes a stacked film. The stacked film includes a first layer including a first material with a first Debye temperature, and a second layer in contact with the first layer and including a second material with a second Debye temperature lower than the first Debye temperature. A ratio of the first Debye temperature to the second Debye temperature is equal to or greater than 5.

公开(公告)号：US20220085277A1

公开(公告)日：2022-03-17

申请号：US17202151

申请日：2021-03-15

Applicant: Kioxia Corporation

Inventor： Shogo ITAI ,  Tadaomi DAIBOU ,  Yuichi ITO ,  Katsuyoshi KOMATSU

IPC: H01L43/02 ,  H01L27/22 ,  H01F10/32

Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistance effect element including first and second magnetic layers each having a fixed magnetization direction, a third magnetic layer provided between the first and second magnetic layers, and having a variable magnetization direction, a first nonmagnetic layer between the first and third magnetic layers, and a second nonmagnetic layer between the second and third magnetic layers, and a switching element connected in series to the magnetoresistance effect element, changing from an electrically nonconductive state to an electrically conductive state when a voltage applied between two terminals is higher than or equal to a threshold voltage.