公开(公告)号：US20210296568A1

公开(公告)日：2021-09-23

申请号：US17003846

申请日：2020-08-26

Applicant: KIOXIA CORPORATION

Inventor： Taichi IGARASHI ,  Tadaomi DAIBOU ,  Junichi ITO ,  Tadashi KAI ,  Shogo ITAI ,  Toshiyuki ENDA

IPC: H01L43/02 ,  H01L27/22 ,  G11C11/16

Abstract: According to one embodiment, a memory device includes a first wiring extending in a first direction, and a second wiring extending in a second direction that intersects the first direction. A memory cell is between the first wiring and the second wiring and includes a resistive memory element and a switching element that are connected in series between the first wiring and the second wiring. An insulating region surrounds side surfaces of the memory cell. The insulating region includes a first insulating part adjacent to a side surface of the resistive memory element and a second insulating part adjacent to a side surface of the switching element. The second insulating part has a higher thermal conductivity than the first insulating part.

公开(公告)号：US20220013579A1

公开(公告)日：2022-01-13

申请号：US17482865

申请日：2021-09-23

Applicant: Kioxia Corporation

Inventor： Tadaomi DAIBOU ,  Yasushi NAKASAKI ,  Tadashi KAI ,  Hiroki KAWAI ,  Takamitsu ISHIHARA ,  Junichi ITO

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/08

Abstract: According to one embodiment, a magnetic memory device including a stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and containing magnesium (Mg) and oxygen (O). The nonmagnetic layer further contains a first additive element and a second additive element, the first additive element is at least one element selected from sulfur (S), gallium (Ga), aluminum (Al), titanium (Ti), vanadium (V), hydrogen (H), fluorine (F), manganese (Mg), lithium (Li), nitrogen (N) and magnesium (Mg), and the second additive element is lithium (Li).

公开(公告)号：US20230380183A1

公开(公告)日：2023-11-23

申请号：US18229133

申请日：2023-08-01

Applicant: Kioxia Corporation

Inventor： Masayoshi IWAYAMA ,  Tatsuya KISHI ,  Masahiko NAKAYAMA ,  Toshihiko NAGASE ,  Daisuke WATANABE ,  Tadashi KAI

IPC: H10B61/00 ,  H10N50/01

CPC classification number: H10B61/10 ,  H10N50/01 ,  H10N50/80

Abstract: A magnetic memory device including a first memory cell which includes a first stacked structure including a magnetic layer and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer. Each of the first stacked structure and the second stacked structure includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. A concentration of iron (Fe) contained in the first magnetic layer included in the first stacked structure and a concentration of iron (Fe) contained in the first magnetic layer included in the second stacked structure are different from each other.

公开(公告)号：US20220278168A1

公开(公告)日：2022-09-01

申请号：US17750002

申请日：2022-05-20

Applicant: KIOXIA CORPORATION

Inventor： Masahiko NAKAYAMA ,  Kazumasa SUNOUCHI ,  Gaku SUDO ,  Tadashi KAI

IPC: H01L27/22 ,  H01L43/02

Abstract: A nonvolatile storage device includes first interconnections extending in a first direction and second interconnections extending in a second direction intersecting the first direction. Memory cells are formed at intersections between first and second interconnections. Each memory cell includes a resistance change element and a selector. In the arrangement of memory cells, all memory cells that are connected to any particular first interconnection are aligned along that first interconnection, and all memory cells connected to any particular second interconnection are alternately staggered in the first direction across a width of that second interconnection.

公开(公告)号：US20210082999A1

公开(公告)日：2021-03-18

申请号：US16816775

申请日：2020-03-12

Applicant: KIOXIA CORPORATION

Inventor： Masaru TOKO ,  Tadaomi DAIBOU ,  Junichi ITO ,  Taichi IGARASHI ,  Tadashi KAI

IPC: H01L27/22 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16

Abstract: A magnetoresistive memory device according to one embodiment includes: first and second layer stacks, each of which includes: a first ferromagnetic layer having a magnetization directed in a first direction; a non-magnetic first conductive layer above the first ferromagnetic layer, a second ferromagnetic layer provided above the first conductive layer and having a magnetization directed in a second direction different from the first direction, a first insulating layer on an upper surface of the second ferromagnetic layer, and a third ferromagnetic layer above the first insulating layer. The second ferromagnetic layer of the second layer stack is thicker than the second ferromagnetic layer of the first layer stack.