公开(公告)号：US20210341830A1

公开(公告)日：2021-11-04

申请号：US17197978

申请日：2021-03-10

Applicant: Kioxia Corporation

Inventor： Yukio OPPATA ,  Shoji MIMOTOGI

IPC: G03F1/38 ,  G03F1/62

Abstract: A pattern forming method of an embodiment includes: obtaining a height difference of a transfer surface of a substrate to which a pattern is to be transferred; measuring a focus shift tracking amount with respect to the height difference of an exposure apparatus that performs pattern transfer; calculating a difference between the height difference and the tracking amount; forming a photomask provided with an optical path difference corresponding to the difference; and transferring a pattern to the substrate using the photomask.

公开(公告)号：US20210048739A1

公开(公告)日：2021-02-18

申请号：US16804826

申请日：2020-02-28

Applicant: KIOXIA CORPORATION

Inventor： Yukio OPPATA ,  Kosuke TAKAI

IPC: G03F1/32

Abstract: A method for manufacturing a photomask includes obtaining a substrate on which a halftone film, a light-shielding film, and a resist film are stacked, irradiating a first region of the resist film at a first dose and a second region of the resist film that surrounds the first region at a second dose greater than the first dose, developing the resist film in the first region to form a mask pattern while leaving the resist film in the second region to form a mask frame pattern, and then patterning the light-shielding film using the mask pattern formed in the resist film.

公开(公告)号：US20240427229A1

公开(公告)日：2024-12-26

申请号：US18734773

申请日：2024-06-05

Applicant: Kioxia Corporation

Inventor： Katsuyoshi KODERA ,  Yukio OPPATA ,  Shoji MIMOTOGI

IPC: G03F1/32 ,  G03F1/36 ,  G03F1/60 ,  G03F1/70

Abstract: A method of manufacturing a photomask comprises forming a mask film on a surface of a substrate, and forming, with the mask film, a first mask pattern in a first region of the substrate and a second mask pattern in a second region of the substrate. A coverage ratio of the first mask pattern is different from a coverage ratio of the second mask pattern. A light transmittance rate of light through the substrate in the first region and the first mask pattern is different from a light transmittance rate of the light through the substrate in the second region and the second mask pattern.