公开(公告)号：US20240105420A1

公开(公告)日：2024-03-28

申请号：US18332203

申请日：2023-06-09

Applicant: Kioxia Corporation

Inventor： Katsuyoshi KODERA ,  Shoji MIMOTOGI ,  Shunko MAGOSHI ,  Ryuji OGAWA ,  Taiki KIMURA

IPC: H01J37/317

CPC classification number: H01J37/3174 ,  H01J2237/31762 ,  H01J2237/31776

Abstract: A data generation apparatus of one embodiment includes a processing unit, an evaluation unit, and a conversion unit. The processing unit designs, through optical proximity correction based on a target pattern formed on a substrate using the photomask, a mask pattern corresponding to the target pattern and including a plurality of rectangular regions. The evaluation unit evaluates the mask pattern using a cost function having, as a parameter, a jog length indicating a length of each of the rectangular regions included in the mask pattern in a first direction. The conversion unit converts mask pattern data indicating the mask pattern with an evaluation that meets a predetermined condition to drawing data corresponding to a variable shaped beam drawing process.

公开(公告)号：US20240427229A1

公开(公告)日：2024-12-26

申请号：US18734773

申请日：2024-06-05

Applicant: Kioxia Corporation

Inventor： Katsuyoshi KODERA ,  Yukio OPPATA ,  Shoji MIMOTOGI

IPC: G03F1/32 ,  G03F1/36 ,  G03F1/60 ,  G03F1/70

Abstract: A method of manufacturing a photomask comprises forming a mask film on a surface of a substrate, and forming, with the mask film, a first mask pattern in a first region of the substrate and a second mask pattern in a second region of the substrate. A coverage ratio of the first mask pattern is different from a coverage ratio of the second mask pattern. A light transmittance rate of light through the substrate in the first region and the first mask pattern is different from a light transmittance rate of the light through the substrate in the second region and the second mask pattern.

公开(公告)号：US20240427228A1

公开(公告)日：2024-12-26

申请号：US18740794

申请日：2024-06-12

Applicant: Kioxia Corporation

Inventor： Kosuke TAKAI ,  Katsuyoshi KODERA

IPC: G03F1/26 ,  G03F1/48 ,  G03F1/80

Abstract: A photomask blank includes a substrate, a first transmittance adjusting film provided on the substrate, a phase shifter film provided on the first transmittance adjusting film, and a second transmittance adjusting film provided on the phase shifter film. When light having a wavelength transmits through the phase shifter film, a phase of the light transmitted through the phase shifter film and the first transmittance adjusting film is different from a phase of light passed through atmosphere with about 180 degrees, and a phase of the light transmitted through the phase shifter film and the second transmittance adjusting film is different from a phase of the light passed through the atmosphere with about 180 degrees.

公开(公告)号：US20240096644A1

公开(公告)日：2024-03-21

申请号：US18458056

申请日：2023-08-29

Applicant: Kioxia Corporation

Inventor： Koki UEHA ,  Katsuyoshi KODERA

IPC: H01L21/3213 ,  G03F7/00 ,  H01L21/768

CPC classification number: H01L21/32139 ,  G03F7/0002 ,  H01L21/76885 ,  H01L21/32135

Abstract: According to one embodiment, a pattern forming method uses a template having a first region with a first recessed portion and a second region adjacent to the first region. The second region has a second recessed portion therein. The recessed portions satisfy a specific relationship (D1>2(H1+H2)/π), where D1 is a shortest distance between the first and second recessed portions, H1 is a depth of the first recessed portion, and H2 is a depth of the second recessed portion. The pattern forming method includes placing an imprint material on an object and pressing the template against the material to mold the imprint material. The molded imprint material is then cured, and the template removed.

公开(公告)号：US20230092256A1

公开(公告)日：2023-03-23

申请号：US17654771

申请日：2022-03-14

Applicant: Kioxia Corporation

Inventor： Sachiko Kobayashi ,  Kazuya Fukuhara ,  Katsuyoshi KODERA ,  Jun Watanabe ,  Koki Ueha

IPC: G03F9/00 ,  H01L21/66

Abstract: According to one embodiment, a mark is a mark arranged on a substrate and including a line-and-space pattern having a substantially constant pitch on the substrate, the mark including: a first mark in which the line-and-space pattern extends in a direction at an angle that is less than 90° or greater than 90° with respect to the first direction, the first mark including a pair of first patterns arranged at a distance in a first direction along the substrate or a first periodic pattern having a period in the first direction; and a second mark in which the line-and-space pattern extends in a direction at an angle that is less than 90° or greater than 90° with respect to the second direction, the second mark including a pair of second patterns provided in correspondence with the pair of first patterns and arranged at a distance in a second direction along the substrate and intersecting the first direction or a second periodic pattern provided in correspondence with the first periodic pattern and having a period in the second direction.