公开(公告)号：US20210383868A1

公开(公告)日：2021-12-09

申请号：US17409584

申请日：2021-08-23

Applicant: KIOXIA CORPORATION

Inventor： Yuki SHIMIZU ,  Yoshihiko KAMATA ,  Tsukasa KOBAYASHI ,  Hideyuki KATAOKA ,  Koji KATO ,  Takumi FUJIMOTO ,  Yoshinao SUZUKI ,  Yuui SHIMIZU

IPC: G11C16/04 ,  G11C16/08 ,  G11C16/24 ,  G11C7/24 ,  G11C16/30 ,  G11C16/10 ,  G11C7/10 ,  G11C16/28

Abstract: A semiconductor memory device includes a substrate, first and second P-type well regions on the substrate, an N-type well region on the substrate and sandwiched between the first and second P-type well regions, a first peripheral circuit on a region of the first P-type well region adjacent to the N-type well region and supplied with a reference voltage via a first wiring, and a second peripheral circuit on a region of the second P-type well region adjacent to the N-type well region and supplied with a reference voltage via a second wiring.