公开(公告)号：US09311431B2

公开(公告)日：2016-04-12

申请号：US13665436

申请日：2012-10-31

Applicant: KLA-Tencor Corporation

Inventor： Sungchul Yoo ,  Andrei V. Shchegrov ,  Thaddeus G. Dziura ,  InKyo Kim ,  SeungHwan Lee ,  ByeoungSu Hwang ,  Leonid Poslavsky

IPC: G06F17/40 ,  G06F19/00 ,  G06F17/50 ,  G06F17/10 ,  G01N21/956 ,  G03F7/20 ,  G01N21/47

CPC classification number: G06F17/50 ,  G01N21/47 ,  G01N21/956 ,  G03F7/70625 ,  G03F7/70683 ,  G06F17/10 ,  G06F17/40 ,  G06F19/00

Abstract: The disclosure is directed to improving optical metrology for a sample with complex structural attributes utilizing custom designed secondary targets. At least one parameter of a secondary target may be controlled to improve sensitivity for a selected parameter of a primary target and/or to reduce correlation of the selected parameter with other parameters of the primary target. Parameters for the primary and secondary target may be collected. The parameters may be incorporated into a scatterometry model. Simulations utilizing the scatterometry model may be conducted to determine a level of sensitivity or a level of correlation for the selected parameter of the primary target. The controlled parameter of the secondary target may be modified until a selected level of sensitivity or a selected level of correlation is achieved.

Abstract translation: 本公开旨在改进具有利用定制设计的次要目标的具有复杂结构属性的样本的光学计量学。 可以控制辅助目标的至少一个参数以提高对主要目标的选定参数的灵敏度和/或减少所选参数与主要目标的其他参数的相关性。 可以收集主要和次要目标的参数。 这些参数可以并入散射测量模型中。 可以进行利用散射测量模型的模拟来确定主要目标的选定参数的灵敏度水平或相关程度。 可以修改辅助目标的受控参数，直到达到所选择的灵敏度水平或所选择的相关水平。

公开(公告)号：US09412673B2

公开(公告)日：2016-08-09

申请号：US14459516

申请日：2014-08-14

Applicant: KLA-Tencor Corporation

Inventor： In-Kyo Kim ,  Xin Li ,  Leonid Poslavsky ,  Liequan Lee ,  Meng Cao ,  Sungchul Yoo ,  Andrei V. Shchegrov ,  Sangbong Park

IPC: G06F17/50 ,  H01L21/66 ,  G03F7/20

CPC classification number: H01L22/20 ,  G03F7/70616 ,  G03F7/70625 ,  G06F17/5068 ,  H01L21/67288 ,  H01L22/12

Abstract: Disclosed are apparatus and methods for characterizing a plurality of structures of interest on a semiconductor wafer. A plurality of models having varying combinations of floating and fixed critical parameters and corresponding simulated spectra is generated. Each model is generated to determine one or more critical parameters for unknown structures based on spectra collected from such unknown structures. It is determined which one of the models best correlates with each critical parameter based on reference data that includes a plurality of known values for each of a plurality of critical parameters and corresponding known spectra. For spectra obtained from an unknown structure using a metrology tool, different ones of the models are selected and used to determine different ones of the critical parameters of the unknown structure based on determining which one of the models best correlates with each critical parameter based on the reference data.

Abstract translation: 公开了用于在半导体晶片上表征感兴趣的多个结构的装置和方法。 产生具有浮动和固定关键参数和对应的模拟光谱的变化组合的多个模型。 生成每个模型以基于从这样的未知结构收集的光谱来确定未知结构的一个或多个关键参数。 基于包括多个关键参数和相应的已知光谱中的每一个的多个已知值的参考数据，确定哪一个模型与每个关键参数最佳相关。 对于使用计量工具从未知结构获得的光谱，选择不同的模型并且用于基于确定哪一个模型与每个关键参数最相关的来确定未知结构的关键参数的不同的参数 参考数据。

公开(公告)号：US20150058813A1

公开(公告)日：2015-02-26

申请号：US14459516

申请日：2014-08-14

Applicant: KLA-Tencor Corporation

Inventor： In-Kyo Kim ,  Xin Li ,  Leonid Poslavsky ,  Liequan Lee ,  Meng Cao ,  Sungchul Yoo ,  Andrei V. Shchegrov ,  Sangbong Park

IPC: G06F17/50

CPC classification number: H01L22/20 ,  G03F7/70616 ,  G03F7/70625 ,  G06F17/5068 ,  H01L21/67288 ,  H01L22/12

Abstract: Disclosed are apparatus and methods for characterizing a plurality of structures of interest on a semiconductor wafer. A plurality of models having varying combinations of floating and fixed critical parameters and corresponding simulated spectra is generated. Each model is generated to determine one or more critical parameters for unknown structures based on spectra collected from such unknown structures. It is determined which one of the models best correlates with each critical parameter based on reference data that includes a plurality of known values for each of a plurality of critical parameters and corresponding known spectra. For spectra obtained from an unknown structure using a metrology tool, different ones of the models are selected and used to determine different ones of the critical parameters of the unknown structure based on determining which one of the models best correlates with each critical parameter based on the reference data.

Abstract translation: 公开了用于在半导体晶片上表征感兴趣的多个结构的装置和方法。 产生具有浮动和固定关键参数和对应的模拟光谱的变化组合的多个模型。 生成每个模型以基于从这样的未知结构收集的光谱来确定未知结构的一个或多个关键参数。 基于包括多个关键参数和相应的已知光谱中的每一个的多个已知值的参考数据，确定哪一个模型与每个关键参数最佳相关。 对于使用计量工具从未知结构获得的光谱，选择不同的模型并且用于基于确定哪一个模型与每个关键参数最相关的来确定未知结构的关键参数的不同的参数 参考数据。

公开(公告)号：US20160322267A1

公开(公告)日：2016-11-03

申请号：US15204461

申请日：2016-07-07

Applicant: KLA-Tencor Corporation

Inventor： In-Kyo Kim ,  Xin Li ,  Leonid Poslavsky ,  Liequan Lee ,  Meng Cao ,  Sungchul Yoo ,  Andrei V. Shchegrov ,  Sangbong Park

IPC: H01L21/66 ,  G06F17/50 ,  G03F7/20 ,  H01L21/67

CPC classification number: H01L22/20 ,  G03F7/70616 ,  G03F7/70625 ,  G06F17/5068 ,  H01L21/67288 ,  H01L22/12

Abstract: Disclosed are apparatus and methods for characterizing a plurality of structures of interest on a semiconductor wafer. A plurality of models having varying combinations of floating and fixed critical parameters and corresponding simulated spectra is generated. Each model is generated to determine one or more critical parameters for unknown structures based on spectra collected from such unknown structures. It is determined which one of the models best correlates with each critical parameter based on reference data that includes a plurality of known values for each of a plurality of critical parameters and corresponding known spectra. For spectra obtained from an unknown structure using a metrology tool, different ones of the models are selected and used to determine different ones of the critical parameters of the unknown structure based on determining which one of the models best correlates with each critical parameter based on the reference data.

公开(公告)号：US20130116978A1

公开(公告)日：2013-05-09

申请号：US13665436

申请日：2012-10-31

Applicant: KLA-TENCOR CORPORATION

Inventor： Sungchul Yoo ,  Andrei V. Shchegrov ,  Thaddeus G. Dziura ,  InKyo Kim ,  SeungHwan Lee ,  ByeoungSu Hwang ,  Leonid Poslavsky

IPC: G06F17/50 ,  G06F17/10

CPC classification number: G06F17/50 ,  G01N21/47 ,  G01N21/956 ,  G03F7/70625 ,  G03F7/70683 ,  G06F17/10 ,  G06F17/40 ,  G06F19/00

Abstract: The disclosure is directed to improving optical metrology for a sample with complex structural attributes utilizing custom designed secondary targets. At least one parameter of a secondary target may be controlled to improve sensitivity for a selected parameter of a primary target and/or to reduce correlation of the selected parameter with other parameters of the primary target. Parameters for the primary and secondary target may be collected. The parameters may be incorporated into scatterometry model. Simulations utilizing the scatterometry model may be conducted to determine a level of sensitivity or a level of correlation for the selected parameter of the primary target. The controlled parameter of the secondary target may be modified until a selected level of sensitivity or a selected level of correlation is achieved.

Abstract translation: 本公开旨在改进具有利用定制设计的次要目标的具有复杂结构属性的样本的光学计量学。 可以控制辅助目标的至少一个参数以提高对主要目标的选定参数的灵敏度和/或减少所选参数与主要目标的其他参数的相关性。 可以收集主要和次要目标的参数。 这些参数可以并入散射测量模型中。 可以进行利用散射测量模型的模拟来确定主要目标的选定参数的灵敏度水平或相关程度。 可以修改辅助目标的受控参数，直到达到所选择的灵敏度水平或所选择的相关水平。