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公开(公告)号：US10769320B2
公开(公告)日：2020-09-08
申请号：US14107850
申请日：2013-12-16
IPC分类号： G06F30/20 , G03F7/20 , G06F30/398
摘要： Methods and systems for performing measurements based on a measurement model integrating a metrology-based target model with a process-based target model. Systems employing integrated measurement models may be used to measure structural and material characteristics of one or more targets and may also be used to measure process parameter values. A process-based target model may be integrated with a metrology-based target model in a number of different ways. In some examples, constraints on ranges of values of metrology model parameters are determined based on the process-based target model. In some other examples, the integrated measurement model includes the metrology-based target model constrained by the process-based target model. In some other examples, one or more metrology model parameters are expressed in terms of other metrology model parameters based on the process model. In some other examples, process parameters are substituted into the metrology model.
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公开(公告)号：US10438825B2
公开(公告)日：2019-10-08
申请号：US15688751
申请日：2017-08-28
摘要： Methods and systems for performing in-situ, selective spectral reflectometry (SSR) measurements of semiconductor structures disposed on a wafer are presented herein. Illumination light reflected from a wafer surface is spatially imaged. Signals from selected regions of the image are collected and spectrally analyzed, while other portions of the image are discarded. In some embodiments, a SSR includes a dynamic mirror array (DMA) disposed in the optical path at or near a field plane conjugate to the surface of the semiconductor wafer under measurement. The DMA selectively blocks the undesired portion of wafer image. In other embodiments, a SSR includes a hyperspectral imaging system including a plurality of spectrometers each configured to collect light from a spatially distinct area of a field image conjugate to the wafer surface. Selected spectral signals associated with desired regions of the wafer image are selected for analysis.
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公开(公告)号：US10215688B2
公开(公告)日：2019-02-26
申请号：US15217549
申请日：2016-07-22
发明人： Andrei V. Shchegrov , Lawrence D. Rotter , David Y. Wang , Andrei Veldman , Kevin Peterlinz , Gregory Brady , Derrick A. Shaughnessy
摘要： The system includes a modulatable illumination source configured to illuminate a surface of a sample disposed on a sample stage, a detector configured to detect illumination emanating from a surface of the sample, illumination optics configured to direct illumination from the modulatable illumination source to the surface of the sample, collection optics configured to direct illumination from the surface of the sample to the detector, and a modulation control system communicatively coupled to the modulatable illumination source, wherein the modulation control system is configured to modulate a drive current of the modulatable illumination source at a selected modulation frequency suitable for generating illumination having a selected coherence feature length. In addition, the present invention includes the time-sequential interleaving of outputs of multiple light sources to generate periodic pulse trains for use in multi-wavelength time-sequential optical metrology.
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4.发明授权公开(公告)号：US10152678B2
公开(公告)日：2018-12-11
申请号：US14942738
申请日：2015-11-16
IPC分类号： G06N99/00
摘要： A system, method and computer program product are provided for combining raw data from multiple metrology tools. Reference values are obtained for at least one parameter of a training component. Signals are collected for the at least one parameter of the training component, utilizing a first metrology tool and a different second metrology tool. Further, at least a portion the signals are transformed into a set of signals, and for each of the at least one parameter of the training component, a corresponding relationship between the set of signals and the reference values is determined and a corresponding training model is created therefrom. Signals from a target component are collected utilizing at least the first metrology tool and the second metrology tool, and each created training model is applied to the signals collected from the target component to measure parametric values for the target component.
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公开(公告)号：US10062157B2
公开(公告)日：2018-08-28
申请号：US15342432
申请日：2016-11-03
发明人： Stilian Ivanov Pandev , Alexander Kuznetsov , Gregory R. Brady , Andrei V. Shchegrov , Noam Sapiens , John J. Hench
CPC分类号： G06T7/0004 , G01B2210/56 , G01N21/211 , G01N21/255 , G01N21/84 , G01N21/8422 , G01N2201/06113 , G03F7/70625 , G03F7/70633 , G06T7/60 , G06T2207/10004 , G06T2207/30148
摘要： Disclosed are apparatus and methods for determining a structure or process parameter value of a target of interest on a semiconductor wafer. A plurality of collection patterns are defined for a spatial light beam controller positioned at a pupil image plane of a metrology tool. For each collection pattern, a signal is collected from a sensor of the metrology tool, and each collected signal represents a combination of a plurality of signals that the spatial light beam controller samples, using each collection pattern, from a pupil image of the target of interest. The collection patterns are selected so that the pupil image is reconstructable based on the collection patterns and their corresponding collection signals. The collected signal for each of the collection patterns is analyzed to determine a structure or process parameter value for the target of interest.
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公开(公告)号：US20160320319A1
公开(公告)日：2016-11-03
申请号：US15141453
申请日：2016-04-28
IPC分类号： G01N23/207
摘要： Methods and systems for performing overlay and edge placement errors of device structures based on x-ray diffraction measurement data are presented. Overlay error between different layers of a metrology target is estimated based on the intensity variation within each x-ray diffraction order measured at multiple, different angles of incidence and azimuth angles. The estimation of overlay involves a parameterization of the intensity modulations of common orders such that a low frequency shape modulation is described by a set of basis functions and a high frequency overlay modulation is described by an affine-circular function including a parameter indicative of overlay. In addition to overlay, a shape parameter of the metrology target is estimated based on a fitting analysis of a measurement model to the intensities of the measured diffraction orders. In some examples, the estimation of overlay and the estimation of one or more shape parameter values are performed simultaneously.
摘要翻译： 介绍了基于x射线衍射测量数据进行装置结构叠加和边缘放置误差的方法和系统。 基于在多个不同的入射角和方位角测量的每个x射线衍射级中的强度变化来估计度量目标的不同层之间的叠加误差。 叠加的估计涉及通用顺序的强度调制的参数化，使得通过一组基本函数描述低频形状调制，并且通过包括表示覆盖的参数的仿射循环函数来描述高频覆盖调制。 除了覆盖之外，基于测量模型的拟合分析与测量的衍射级的强度来估计度量目标的形状参数。 在一些示例中，同时执行叠加的估计和一个或多个形状参数值的估计。
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公开(公告)号：US09400246B2
公开(公告)日：2016-07-26
申请号：US13648768
申请日：2012-10-10
发明人： Andrei V. Shchegrov , Lawrence D. Rotter , David Y. Wang , Andrei Veldman , Kevin Peterlinz , Gregory Brady , Derrick Shaughnessy
CPC分类号： G01N21/211 , G01B11/0616 , G01N21/4738 , G01N21/55 , G01N2021/213 , G03F7/70608 , G03F7/70625 , G03F7/70633
摘要： The present invention may include a modulatable illumination source configured to illuminate a surface of a sample disposed on a sample stage, a detector configured to detect illumination emanating from a surface of the sample, illumination optics configured to direct illumination from the modulatable illumination source to the surface of the sample, collection optics configured to direct illumination from the surface of the sample to the detector, and a modulation control system communicatively coupled to the modulatable illumination source, wherein the modulation control system is configured to modulate a drive current of the modulatable illumination source at a selected modulation frequency suitable for generating illumination having a selected coherence feature length. In addition, the present invention includes the time-sequential interleaving of outputs of multiple light sources to generate periodic pulses trains for use in multi-wavelength time-sequential optical metrology.
摘要翻译： 本发明可以包括被配置为照亮设置在样品台上的样品的表面的可调节照明源，被配置为检测从样品的表面发出的照明的检测器，被配置为将来自可调节照明源的照明引导到 样品的表面，被配置为将样品的表面的照射引导到检测器的收集光学器件，以及通信地耦合到可调节照明源的调制控制系统，其中调制控制系统被配置为调制可调节照明的驱动电流 源，其以适于产生具有选定的相干特征长度的照明的选定调制频率。 此外，本发明包括多个光源的输出的时间顺序交错以产生用于多波长时间顺序光学测量的周期性脉冲串。
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公开(公告)号：US20160109375A1
公开(公告)日：2016-04-21
申请号：US14882370
申请日：2015-10-13
IPC分类号： G01N21/88
CPC分类号： G01N21/956 , G01N21/93
摘要： Methods and systems for measuring metrology targets smaller than the illumination spot size employed to perform the measurement are described herein. Collected measurement signals contaminated with information from structures surrounding the target area are reconstructed to eliminate the contamination. In some examples, measurement signals associated one or more small targets and one or more large targets located in close proximity to one another are used to train a signal reconstruction model. The model is subsequently used to reconstruct measurement signals from other small targets. In some other examples, multiple measurements of a small target at different locations within the target are de-convolved to estimate target area intensity. Reconstructed measurement signals are determined by a convolution of the illumination spot profile and the target area intensity. In a further aspect, the reconstructed signals are used to estimate values of parameters of interest associated with the measured structures.
摘要翻译： 本文描述了用于测量小于用于执行测量的照明点尺寸的度量目标的方法和系统。 重建被污染源自目标区域周围结构信息的收集的测量信号，以消除污染。 在一些示例中，使用与一个或多个小目标相关联的测量信号和彼此靠近彼此靠近的一个或多个大目标来训练信号重建模型。 该模型随后用于重建来自其他小目标的测量信号。 在一些其他示例中，目标内不同位置处的小目标的多次测量被去卷积以估计目标区域强度。 重建的测量信号由照明光斑轮廓和目标区域强度的卷积确定。 在另一方面，重建的信号用于估计与测量结构相关联的感兴趣参数的值。
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公开(公告)号：US09255877B2
公开(公告)日：2016-02-09
申请号：US14278224
申请日：2014-05-15
发明人： Andrei Veldman , Andrei V. Shchegrov , Gregory Brady , Thaddeus Gerard Dziura , Stilian Ivanov Pandev , Alexander Kuznetsov
CPC分类号： G01N21/211 , G01B11/0625 , G01B11/0641 , G01B2210/56 , G01N21/9501 , G01N2021/213
摘要： Methods and systems for evaluating the capability of a measurement system to track measurement parameters through a given process window are presented herein. Performance evaluations include random perturbations, systematic perturbations, or both to effectively characterize the impact of model errors, metrology system imperfections, and calibration errors, among others. In some examples, metrology target parameters are predetermined as part of a Design of Experiments (DOE). Estimated values of the metrology target parameters are compared to the known DOE parameter values to determine the tracking capability of the particular measurement. In some examples, the measurement model is parameterized by principal components to reduce the number of degrees of freedom of the measurement model. In addition, exemplary methods and systems for optimizing the measurement capability of semiconductor metrology systems for metrology applications subject to process variations are presented.
摘要翻译： 本文介绍了用于评估测量系统通过给定过程窗口跟踪测量参数的能力的方法和系统。 性能评估包括随机扰动，系统扰动或两者，以有效表征模型误差，计量系统缺陷和校准误差等的影响。 在一些示例中，度量目标参数被预先确定为实验设计（DOE）的一部分。 将度量目标参数的估计值与已知的DOE参数值进行比较，以确定特定测量的跟踪能力。 在一些示例中，测量模型由主要组件参数化，以减少测量模型的自由度数。 此外，提出了用于优化用于受过程变化的度量应用的半导体测量系统的测量能力的示例性方法和系统。
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10.发明申请APPARATUS, TECHNIQUES, AND TARGET DESIGNS FOR MEASURING SEMICONDUCTOR PARAMETERS 有权用于测量半导体参数的设备，技术和目标设计公开(公告)号：US20150323471A1
公开(公告)日：2015-11-12
申请号：US14708058
申请日：2015-05-08
IPC分类号： G01N21/956 , G01N21/95 , G01N21/93 , G01B11/00
CPC分类号： G01N21/93 , G01B2210/56 , G01N21/4788 , G01N21/9501 , G01N21/95607 , G01N2201/06113 , G01N2201/062 , G01N2201/10 , G01N2201/1296
摘要： In one embodiment, apparatus and methods for determining a parameter of a target are disclosed. A target having an imaging structure and a scatterometry structure is provided. An image of the imaging structure is obtained with an imaging channel of a metrology tool. A scatterometry signal is also obtained from the scatterometry structure with a scatterometry channel of the metrology tool. At least one parameter, such as overlay error, of the target is determined based on both the image and the scatterometry signal.
摘要翻译： 在一个实施例中，公开了用于确定目标的参数的装置和方法。 提供具有成像结构和散射测量结构的目标。 使用计量工具的成像通道获得成像结构的图像。 散射测量信号也通过散度仪结构与计量工具的散射测量通道获得。 基于图像和散射测量信号确定目标的至少一个参数，例如重叠误差。
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