Capacitive micromachined ultrasonic transducers with increased lifetime

    公开(公告)号:US11097312B2

    公开(公告)日:2021-08-24

    申请号:US15751207

    申请日:2016-08-04

    Abstract: An array of CMUT cells (10) has a DC bias voltage (VB) coupled to the top electrodes of the cells to bias the electrode to a desired collapsed or partially collapsed state. Fuses (200) are coupled in series with the bottom electrodes (22) of the cells which will open and isolate an individual cell from the other still-functional cells of the array in the event of a failure of the individual cell. In a preferred embodiment the cells are coupled to control integrated circuitry such as microbeamformer circuitry and the fuses are formed of semiconductor materials with the integrated circuitry, thereby leaving the MUT surface area available for high density MUT fabrication. Damage to the integrated circuitry due to short-circuiting of the DC bias current through a failed cell is prevented.

    TEMPERATURE INSENSITIVE BACKING STRUCTURE FOR INTRALUMINAL IMAGING DEVICES

    公开(公告)号:US20200037991A1

    公开(公告)日:2020-02-06

    申请号:US16338798

    申请日:2017-10-03

    Abstract: An imaging catheter assembly is provided. In one embodiment, the imaging catheter assembly includes a flexible elongate member including a distal portion and a proximal portion; and an imaging component coupled to the distal portion of the flexible elongate member, wherein the imaging component includes: an integrated circuit (IC) layer that includes a semiconductor material; an array of ultrasound transducer elements coupled to a first side of the IC layer; and a backing layer coupled to a second side of the IC layer opposite the first side, wherein the backing layer includes a backing material, and wherein a coefficient of thermal expansion (CTE) difference between the semiconductor material and the backing material is less than 23 parts per million per degree Centigrade (ppm/C).

    Capacitive micromachined ultrasonic transducers with overcurrent protection

    公开(公告)号:US11117165B2

    公开(公告)日:2021-09-14

    申请号:US15751252

    申请日:2016-08-02

    Abstract: An array of CMUT cells has a DC bias voltage coupled to the top electrodes of the cells to bias the electrode to a desired collapsed or partially collapsed state. In the event of a short-circuit failure of a CMUT cell a protection circuit for the cell senses an over-current condition and responds by opening the DC current path through the failed cell. The protection circuit further disables the transmit and receive circuitry of the cell. In another implementation a sense circuit senses an over-current condition of the
    DC bias supply and responds by disabling all of the CMUT cells of the array, then sequentially re-enabling them, except that an attempt to re-enable a failed cell results in that cell remaining in a disabled state.

    Ultrasound transducer assembly and method for transmitting and receiving ultrasound waves

    公开(公告)号:US10743840B2

    公开(公告)日:2020-08-18

    申请号:US15024065

    申请日:2014-09-15

    Abstract: An ultrasound transducer assembly (10) is disclosed comprising a plurality of transducer elements (32) for transmitting and receiving ultrasound waves (24) each having a substrate (40) and a flexible membrane (46) disposed in a distance from a substrate. An AC voltage control unit (56) is provided for controlling an AC voltage provided to each of the transducer elements, and a DC voltage control unit (60) for controlling a DC bias voltage provided to the transducer elements in order to bring the flexible membranes in a collapse mode into contact with the substrate. The DC voltage control unit is adapted to disconnect the DC bias voltage from the transducer elements temporarily during the operation of the ultrasound transducer assembly to limit the collapse mode.

    Temperature insensitive backing structure for intraluminal imaging devices

    公开(公告)号:US11813116B2

    公开(公告)日:2023-11-14

    申请号:US16338798

    申请日:2017-10-03

    CPC classification number: A61B8/4494 A61B8/12 A61B8/4466 A61B2562/12

    Abstract: An imaging catheter assembly is provided. In one embodiment, the imaging catheter assembly includes a flexible elongate member including a distal portion and a proximal portion; and an imaging component coupled to the distal portion of the flexible elongate member, wherein the imaging component includes: an integrated circuit (IC) layer that includes a semiconductor material; an array of ultrasound transducer elements coupled to a first side of the IC layer; and a backing layer coupled to a second side of the IC layer opposite the first side, wherein the backing layer includes a backing material, and wherein a coefficient of thermal expansion (CTE) difference between the semiconductor material and the backing material is less than 23 parts per million per degree Centigrade (ppm/C).

    Capacitive micro-machined ultrasound transducer cell

    公开(公告)号:US11278932B2

    公开(公告)日:2022-03-22

    申请号:US14914019

    申请日:2014-08-18

    Abstract: The invention relates to a capacitive micro-machined ultrasound transducer (CMUT) cell (6) comprising a cell floor (31) having a first electrode (7); a cell membrane (5) having a second electrode (7′) which opposes the first electrode and vibrates during transmission or reception of acoustic energy; a transmitter/receiver coupled to the first and second electrodes which causes the cell membrane to vibrate at an acoustic frequency and/or receives signals at an acoustic frequency; and an acoustic lens (13), overlaying the cell membrane, and having an inner surface opposing the cell membrane and an outer, patient-facing surface. According to the present invention the acoustic lens comprises at least one layer of a material selected from the group of: polybudatiene, polyether block amide (PEBAX), polydimethylsiloxane (PDMS) and buthylrubber.

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