公开(公告)号：US10992483B2

公开(公告)日：2021-04-27

申请号：US16424024

申请日：2019-05-28

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyunsu Ju ,  Gyosub Lee

IPC: H04L29/06 ,  H04L9/32 ,  G11C13/00

Abstract: A physically unclonable function (PUF) device includes a memory cell array including a plurality of memory cells, a selecting circuit configured to select one or more memory cells among the plurality of memory cells in response to a challenge, and a sense amplifier and quantizer configured to generate a quantize signal from the selected memory cell. The number of quantization sections for generating the quantize signal may be different from the number of resistance state distributions generated from the selected memory cell. One or more quantization sections may exist in one resistance state distribution section.

公开(公告)号：US11107894B2

公开(公告)日：2021-08-31

申请号：US16283411

申请日：2019-02-22

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyunsu Ju ,  Jin-Dong Song ,  Joonyeon Chang ,  Gyosub Lee

IPC: H01L29/205 ,  H01L29/66 ,  H01L29/737 ,  H01L29/78 ,  H01L29/08 ,  H01L29/735 ,  H01L29/10

Abstract: Provided is a Group III-V compound semiconductor device. The device includes a substrate, a compound semiconductor layer provided on the substrate; and a buffer layer interposed between the compound semiconductor layer and the substrate. The compound semiconductor layer includes a first semiconductor area having a first conductivity type and a second semiconductor area having a second conductivity type. The buffer layer includes a high electron density area. In the buffer layer, an electron density of the high electron density area is higher than an electron density outside the high electron density area.

公开(公告)号：US10990542B2

公开(公告)日：2021-04-27

申请号：US16425812

申请日：2019-05-29

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyunsu Ju ,  Gyosub Lee

IPC: G06F12/14 ,  G11C16/08 ,  G11C16/22 ,  G11C16/16 ,  G11C16/26 ,  G11C16/34 ,  G06F12/02 ,  G06F12/1009 ,  G06F3/06

Abstract: The flash memory system according to the embodiment of the present invention is characterized by programming a selected page in a quantization signal generating operation, providing a reference read voltage to a selected word line connected to the selected page, A flash memory for generating a flash memory; And a memory controller for receiving a quantized signal from the flash memory and generating a response using the quantized signal, wherein the memory controller receives an challenge from a host and the flash memory performs the quantized signal generation.