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公开(公告)号：US10992483B2
公开(公告)日：2021-04-27
申请号：US16424024
申请日：2019-05-28
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Hyunsu Ju , Gyosub Lee
Abstract: A physically unclonable function (PUF) device includes a memory cell array including a plurality of memory cells, a selecting circuit configured to select one or more memory cells among the plurality of memory cells in response to a challenge, and a sense amplifier and quantizer configured to generate a quantize signal from the selected memory cell. The number of quantization sections for generating the quantize signal may be different from the number of resistance state distributions generated from the selected memory cell. One or more quantization sections may exist in one resistance state distribution section.
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Patent Agency Ranking
公开(公告)号：US10686534B2
公开(公告)日：2020-06-16
申请号：US16376672
申请日：2019-04-05
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Jaehoon Han , Sanghyeon Kim , Hyunsu Ju , Jin-Dong Song
Abstract: A method for optical interconnection between semiconductor chips according to an embodiment include converting an electrical signal to an optical signal, transmitting the optical signal to a second substrate disposed above or below a first substrate using an optical transmitter provided on the first substrate, receiving the optical signal using an optical detector provided on the second substrate, and converting the received optical signal to an electrical signal. Accordingly, using a mid-infrared wavelength range of light that is transparent to semiconductor materials such as silicon and next-generation high-mobility materials, it is possible to enable interconnection between stacked semiconductor chips without using metal wiring. Using optical interconnection, it is possible to significantly reduce the bandwidth and power consumption, and overcome the limitations of TSV technology, and it is possible to extend the photonics technology and platform established in the existing Si Photonics, thereby reducing the cost required for design.
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公开(公告)号：US11702736B2
公开(公告)日：2023-07-18
申请号：US17155992
申请日：2021-01-22
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Jae Kap Lee , Hyunsu Ju
IPC: C23C16/27 , H01L23/373
CPC classification number: C23C16/27 , H01L23/3732 , H01L23/3737
Abstract: Provided are a method of manufacturing a diamond-graphene hybrid heat spreader-thermal interface material assembled thermal management material including: (a) preparing a planar diamond base material; and (b) converting a predetermined thickness of at least a partial area of one side or both sides of the diamond base material into vertical graphene, wherein the diamond base material serves as a heat spreader, and a graphene layer formed on the diamond base material serves as a thermal interface material (TIM) or a heat sink, and a method of modulating the diamond-graphene hybrid thermal management material including modulating the thermal management material by attaching a heterogenous member to the surface of the diamond-graphene hybrid thermal management material and pressurizing the attached structure.
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公开(公告)号：US11107894B2
公开(公告)日：2021-08-31
申请号：US16283411
申请日：2019-02-22
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Hyunsu Ju , Jin-Dong Song , Joonyeon Chang , Gyosub Lee
IPC: H01L29/205 , H01L29/66 , H01L29/737 , H01L29/78 , H01L29/08 , H01L29/735 , H01L29/10
Abstract: Provided is a Group III-V compound semiconductor device. The device includes a substrate, a compound semiconductor layer provided on the substrate; and a buffer layer interposed between the compound semiconductor layer and the substrate. The compound semiconductor layer includes a first semiconductor area having a first conductivity type and a second semiconductor area having a second conductivity type. The buffer layer includes a high electron density area. In the buffer layer, an electron density of the high electron density area is higher than an electron density outside the high electron density area.
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公开(公告)号：US11544541B2
公开(公告)日：2023-01-03
申请号：US16526537
申请日：2019-07-30
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Suyoun Lee , Joon Young Kwak , Hyunsu Ju , Byung-Ki Cheong
Abstract: An artificial neuron device according to an embodiment of the present disclosure includes a first resistor connected between an input terminal and a first node; a capacitor connected between the first node and a ground terminal; a threshold switch connected between the first node and a second node; and a second resistor connected between the second node and the ground terminal, wherein, when an input voltage of a certain level is applied to the input terminal by time, a membrane potential occurs at the first node and a spike current flows through the second node. According to present disclosure, the artificial neuron device expresses the Integrate-and-Fire function, the rate coding ability, the SFA characteristics, and the chaotic activity of the biological neuron, and therefore may be widely used for the artificial neuron network device, the large-scale brain-inspired computing system, and the artificial intelligence (AI) system.
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公开(公告)号：US10990542B2
公开(公告)日：2021-04-27
申请号：US16425812
申请日：2019-05-29
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Hyunsu Ju , Gyosub Lee
IPC: G06F12/14 , G11C16/08 , G11C16/22 , G11C16/16 , G11C16/26 , G11C16/34 , G06F12/02 , G06F12/1009 , G06F3/06
Abstract: The flash memory system according to the embodiment of the present invention is characterized by programming a selected page in a quantization signal generating operation, providing a reference read voltage to a selected word line connected to the selected page, A flash memory for generating a flash memory; And a memory controller for receiving a quantized signal from the flash memory and generating a response using the quantized signal, wherein the memory controller receives an challenge from a host and the flash memory performs the quantized signal generation.
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