公开(公告)号：US10686534B2

公开(公告)日：2020-06-16

申请号：US16376672

申请日：2019-04-05

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jaehoon Han ,  Sanghyeon Kim ,  Hyunsu Ju ,  Jin-Dong Song

IPC: H04B10/80 ,  H04B10/50 ,  H04B10/66

Abstract: A method for optical interconnection between semiconductor chips according to an embodiment include converting an electrical signal to an optical signal, transmitting the optical signal to a second substrate disposed above or below a first substrate using an optical transmitter provided on the first substrate, receiving the optical signal using an optical detector provided on the second substrate, and converting the received optical signal to an electrical signal. Accordingly, using a mid-infrared wavelength range of light that is transparent to semiconductor materials such as silicon and next-generation high-mobility materials, it is possible to enable interconnection between stacked semiconductor chips without using metal wiring. Using optical interconnection, it is possible to significantly reduce the bandwidth and power consumption, and overcome the limitations of TSV technology, and it is possible to extend the photonics technology and platform established in the existing Si Photonics, thereby reducing the cost required for design.

公开(公告)号：US11107894B2

公开(公告)日：2021-08-31

申请号：US16283411

申请日：2019-02-22

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyunsu Ju ,  Jin-Dong Song ,  Joonyeon Chang ,  Gyosub Lee

IPC: H01L29/205 ,  H01L29/66 ,  H01L29/737 ,  H01L29/78 ,  H01L29/08 ,  H01L29/735 ,  H01L29/10

Abstract: Provided is a Group III-V compound semiconductor device. The device includes a substrate, a compound semiconductor layer provided on the substrate; and a buffer layer interposed between the compound semiconductor layer and the substrate. The compound semiconductor layer includes a first semiconductor area having a first conductivity type and a second semiconductor area having a second conductivity type. The buffer layer includes a high electron density area. In the buffer layer, an electron density of the high electron density area is higher than an electron density outside the high electron density area.

公开(公告)号：US10901246B2

公开(公告)日：2021-01-26

申请号：US16528633

申请日：2019-08-01

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jae-Hoon Han ,  Sanghyeon Kim ,  Pavlo Bidenko ,  Subin Lee ,  Jin-Dong Song

IPC: G02F1/05 ,  G02F1/025

Abstract: An optical phase shifter according to an embodiment for achieving the object of the present disclosure includes a first semiconductor layer formed on a substrate, a second semiconductor layer having opposite polarity to the first semiconductor layer, an insulating layer formed between the first semiconductor layer and the second semiconductor layer, and including ferroelectrics, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. According to an embodiment, the introduction of ferroelectric materials to a semiconductor-insulator-semiconductor (SIS) optical phase shifter brings about improvement in charge collection efficiency resulting from the negative capacitance effect, thereby achieving higher phase modulation efficiency and lower power consumption. Additionally, it is possible to realize a new structure of optical switch or modulator device through design changes of the type of ferroelectrics and the structural variables.

公开(公告)号：US09190541B2

公开(公告)日：2015-11-17

申请号：US13906618

申请日：2013-05-31

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jin-Dong Song ,  Eunhye Lee ,  Min Hwan Bae ,  Won Jun Choi ,  Jae Jin Yoon ,  Il Ki Han

IPC: H01L33/00 ,  H01L31/0216 ,  H01L33/44

CPC classification number: H01L31/02168 ,  H01L33/44 ,  Y02E10/50

Abstract: In an aspect of the present disclosure, there is disclosed a manufacture method of an antireflection coating using a self-assembly nano structure, which includes forming a first metal droplet on a substrate by means of droplet epitaxy, depositing a first non-metal on the formed first metal droplet, and forming a first nano compound crystal by means of self-assembly of the deposited first non-metal and the first metal droplet.

Abstract translation: 在本公开的一方面，公开了使用自组装纳米结构的抗反射涂层的制造方法，其包括通过液滴外延在基板上形成第一金属液滴，在第一非金属上沉积第一金属液滴 形成第一金属液滴，并通过沉积的第一非金属和第一金属液滴的自组装形成第一纳米复合晶体。