公开(公告)号：US20020110648A1

公开(公告)日：2002-08-15

申请号：US10122459

申请日：2002-04-15

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Wook-Seong Lee ,  Young Joon Baik ,  Kwang Yong Eun

IPC: C23C016/00 ,  H01L021/469 ,  H01L021/31

CPC classification number: H01J37/32027 ,  H01J37/32009 ,  H01J37/32541

Abstract: A diamond film depositing apparatus and method are disclosed in which a uniform and large plasma is formed on a substrate having a diameter of larger than 100 mm without using a heated filament cathode, without applying a magnetic field thereto, and without using a ballast resistance. The thusly formed plasma is maintained stably for a long time, so that a diamond thick film having a diameter of larger than 4 inches and a thickness of over hundreds of nullm can be deposited on a flat or curved substrate and also on a Si wafer.

Abstract translation: 公开了一种金刚石膜沉积设备和方法，其中在不使用加热的灯丝阴极的情况下，在直径大于100mm的基板上形成均匀且大的等离子体，而不对其施加磁场，并且不使用耐镇流性。 这样形成的等离子体长时间保持稳定，使得直径大于4英寸，厚度超过数百个的金刚石厚膜可以沉积在平坦或弯曲的基板上以及Si晶片上。