公开(公告)号：US20180334471A1

公开(公告)日：2018-11-22

申请号：US15775347

申请日：2016-10-11

Applicant: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY

Inventor： Bo Keun PARK ,  Taek-Mo CHUNG ,  Dong Ju JEON ,  Jeong Hwan HAN ,  Ji Hyeun NAM ,  Chang Gyoun KIM ,  Eun Ae JUNG

IPC: C07F7/22 ,  C07F5/00 ,  C23C16/455 ,  C23C16/40

CPC classification number: C07F7/2224 ,  C07F5/00 ,  C07F7/22 ,  C23C16/06 ,  C23C16/407 ,  C23C16/455 ,  C23C16/45525 ,  H01L21/02 ,  H01L21/205

Abstract: The present invention relates to a novel metal precursor having improved thermal stability and volatility and can provide: a method for readily manufacturing a good quality metal oxide thin film at an excellent growth rate at low temperature by using the metal precursor; and a thin film manufactured by using the same.