Surface Mount Radiofrequency Component

    公开(公告)号:US20220312593A1

    公开(公告)日:2022-09-29

    申请号:US17702927

    申请日:2022-03-24

    Abstract: A surface mount component can include a monolithic substrate, an input terminal, an output terminal, and a DC bias terminal. Each terminal can be formed over the monolithic substrate. A conductive trace can be formed over a surface of the monolithic substrate included in a signal path between the input terminal and the output terminal. A thin-film resistor can be connected in a DC bias path between the DC bias terminal and the signal path. The DC bias path can have, at one or more locations along the DC bias path between the DC bias terminal and the signal path, a cross-sectional area in a plane that is perpendicular to the surface of the monolithic substrate. The cross-sectional area of the DC bias path can be less than about 1,000 square microns.

    High Frequency And High Power Thin-Film Component

    公开(公告)号:US20240250113A1

    公开(公告)日:2024-07-25

    申请号:US18609003

    申请日:2024-03-19

    CPC classification number: H01L28/20 H01L23/367 H01L23/647 H01L23/66

    Abstract: A surface mount component is disclosed including an electrically insulating beam that is thermally conductive. The electrically insulating beam has a first end and a second end that is opposite the first end. The surface mount component includes a thin-film component formed on the electrically insulating beam adjacent the first end of the electrically insulating beam. A heat sink terminal is formed on the electrically insulating beam adjacent a second end of the electrically insulating beam. In some embodiments, the thin-film component has an area power capacity of greater than about 0.17 W/mm2 at about 28 GHz.

    High frequency and high power thin-film component

    公开(公告)号:US11949169B2

    公开(公告)日:2024-04-02

    申请号:US17676889

    申请日:2022-02-22

    CPC classification number: H01Q5/314 H01L27/08 H01L28/20 H01Q1/2283

    Abstract: A resistive splitter can include a monolithic substrate and a patterned resistive layer formed over the monolithic substrate. The resistive splitter can include a first terminal, a second terminal, and a third terminal each connected with the patterned resistive layer. The resistive splitter can include at least one frequency compensating conductive layer formed over a portion of the patterned resistive layer. In some embodiments, the resistive splitter can exhibit a first insertion loss response between the first terminal and the second terminal that is greater than about −10 dB for frequencies ranging from about 0 GHz up to about 30 GHz.

    High Frequency And High Power Thin-Film Component

    公开(公告)号:US20220278453A1

    公开(公告)日:2022-09-01

    申请号:US17676889

    申请日:2022-02-22

    Abstract: A resistive splitter can include a monolithic substrate and a patterned resistive layer formed over the monolithic substrate. The resistive splitter can include a first terminal, a second terminal, and a third terminal each connected with the patterned resistive layer. The resistive splitter can include at least one frequency compensating conductive layer formed over a portion of the patterned resistive layer. In some embodiments, the resistive splitter can exhibit a first insertion loss response between the first terminal and the second terminal that is greater than about −10 dB for frequencies ranging from about 0 GHz up to about 30 GHz.

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