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公开(公告)号：US11664643B1
公开(公告)日：2023-05-30
申请号：US17546799
申请日：2021-12-09
发明人： James W. Raring , Hua Huang
IPC分类号： H01S5/02345 , H01S5/343 , H01S5/30 , H01S5/02 , H01S5/22 , H01S5/323 , H01S5/32 , H01S5/0234 , H01S5/02375 , H01S5/00 , H01S5/10
CPC分类号： H01S5/34333 , H01S5/0014 , H01S5/0202 , H01S5/0203 , H01S5/0234 , H01S5/02345 , H01S5/02375 , H01S5/1082 , H01S5/22 , H01S5/3013 , H01S5/3202 , H01S5/320275 , H01S5/32341 , H01L2224/48091 , H01L2224/48465 , H01S5/0042 , H01S5/32025
摘要： Gallium and nitrogen containing optical devices operable as laser diodes and methods of forming the same are disclosed. The devices include a gallium and nitrogen containing substrate member, which may be semipolar or non-polar. The devices include a chip formed from the gallium and nitrogen substrate member. The chip has a width and a length, a dimension of less than 150 microns characterizing the width of the chip. The devices have a cavity oriented substantially parallel to the length of the chip.
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2.发明授权公开(公告)号：US11973308B2
公开(公告)日：2024-04-30
申请号：US17103587
申请日：2020-11-24
发明人： James W. Raring , Paul Rudy , Eric Goutain , Troy Trottier , Melvin McLaurin , James Harrison , Sten Heikman , Michael Cantore
IPC分类号： H01S5/00 , F21K9/64 , H01S5/02212 , H01S5/02257 , H01S5/023 , H01S5/02315 , H01S5/02326 , H01S5/0233 , H01S5/32 , H01S5/343 , H01L33/00 , H01S5/02 , H01S5/02345 , H01S5/0235 , H01S5/22 , H01S5/40
CPC分类号： H01S5/0087 , F21K9/64 , H01S5/02257 , H01S5/023 , H01S5/02315 , H01S5/02326 , H01S5/0233 , H01S5/32 , H01S5/3203 , H01S5/34333 , H01L33/0045 , H01L2224/48091 , H01L2224/48465 , H01L2224/49175 , H01S5/0202 , H01S5/0216 , H01S5/0217 , H01S5/02212 , H01S5/02345 , H01S5/0235 , H01S5/2201 , H01S5/320225 , H01S5/32025 , H01S5/320275 , H01S5/4056 , H01L2224/48091 , H01L2924/00014
摘要： The embodiments described herein provide a device and method for an integrated white colored electromagnetic radiation source using a combination of laser diode excitation sources based on gallium and nitrogen containing materials and light emitting source based on phosphor materials. A violet, blue, or other wavelength laser diode source based on gallium and nitrogen materials may be closely integrated with phosphor materials, such as yellow phosphors, to form a compact, high-brightness, and highly-efficient, white light source. The phosphor material is provided with a plurality of scattering centers scribed on an excitation surface or inside bulk of a plate to scatter electromagnetic radiation of a laser beam from the excitation source incident on the excitation surface to enhance generation and quality of an emitted light from the phosphor material for outputting a white light emission either in reflection mode or transmission mode.
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公开(公告)号：US12088065B2
公开(公告)日：2024-09-10
申请号：US18095891
申请日：2023-01-11
IPC分类号： H01S5/343 , H01S5/00 , H01S5/02 , H01S5/20 , H01S5/22 , H01S5/32 , H01S5/02325 , H01S5/02345 , H01S5/40
CPC分类号： H01S5/34333 , H01S5/0087 , H01S5/0215 , H01S5/0217 , H01S5/2081 , H01S5/22 , H01S5/3202 , H01S5/32025 , H01S5/3211 , H01L2224/18 , H01L2224/48091 , H01L2224/48465 , H01L2924/16152 , H01L2924/3512 , H01S5/005 , H01S5/02325 , H01S5/02345 , H01S5/2009 , H01S5/320225 , H01S5/3214 , H01S5/4043 , H01S5/4093 , H01S2301/173 , H01S2301/176 , H01L2224/48091 , H01L2924/00014 , H01L2224/48465 , H01L2224/48091 , H01L2924/00
摘要： A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.
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公开(公告)号：US11791606B1
公开(公告)日：2023-10-17
申请号：US17141788
申请日：2021-01-05
IPC分类号： H01S5/042 , B82Y20/00 , H01L33/00 , H01S5/343 , H01S5/34 , H01S5/065 , H01S5/20 , H01S5/22 , H01S5/40 , H01L33/06 , H01S5/32
CPC分类号： H01S5/0427 , B82Y20/00 , H01L33/0045 , H01S5/0651 , H01S5/2031 , H01S5/22 , H01S5/34 , H01S5/3407 , H01S5/34333 , H01L33/06 , H01S5/0652 , H01S5/32025 , H01S5/320275 , H01S5/3414 , H01S5/405 , H01S5/4087 , H01S2301/02
摘要： A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.
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公开(公告)号：US11649936B1
公开(公告)日：2023-05-16
申请号：US16847201
申请日：2020-04-13
发明人： Eric Goutain
IPC分类号： F21K9/64 , G02B27/30 , H01S5/06 , H01S5/30 , H01S5/40 , H01S5/00 , H01S5/343 , H01S5/32 , H01S5/323 , H01S5/02208 , H01S5/024 , H01S5/22 , H01S5/02251 , H01S5/02325 , H01S5/02345
CPC分类号： F21K9/64 , G02B27/30 , H01S5/005 , H01S5/0092 , H01S5/0601 , H01S5/3013 , H01S5/34333 , H01S5/4012 , H01S5/4025 , H01L2224/45124 , H01L2224/48091 , H01L2224/49175 , H01S5/0071 , H01S5/02208 , H01S5/02251 , H01S5/02325 , H01S5/02345 , H01S5/02469 , H01S5/22 , H01S5/32025 , H01S5/320275 , H01S5/32341
摘要： A method and device for emitting electromagnetic radiation at high power using a gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided.
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公开(公告)号：US12066632B2
公开(公告)日：2024-08-20
申请号：US18116735
申请日：2023-03-02
发明人： Paul Rudy , James W. Raring , Eric Goutain , Hua Huang
IPC分类号： G02B27/01 , G02B6/00 , G02B27/42 , H01S5/00 , H01S5/02212 , H01S5/02325 , H01S5/32 , H01S5/343 , H01S5/40 , H01S5/02216 , H01S5/10 , H01S5/20 , H01S5/22 , H01S5/30
CPC分类号： G02B27/0172 , G02B6/00 , G02B27/017 , H01S5/320275 , H01S5/4093 , G02B2027/0178 , G02B27/4205 , G02B27/4272 , H01S5/0014 , H01S5/02212 , H01S5/02216 , H01S5/02325 , H01S5/1039 , H01S5/2009 , H01S5/2201 , H01S5/3063 , H01S5/32025 , H01S5/34333 , H01S5/4012
摘要： The present invention is directed to wearable display technologies. More specifically, various embodiments of the present invention provide wearable augmented reality glasses incorporating projection display systems where one or more laser diodes are used as light source for illustrating images with optical delivery to the eye using transparent waveguides. In one set of embodiments, the present invention provides wearable augmented reality glasses incorporating projector systems that utilize transparent waveguides and blue and/or green laser fabricated using gallium nitride containing material. In another set of embodiments, the present invention provides wearable augmented reality glasses incorporating projection systems having digital lighting processing engines illuminated by blue and/or green laser devices with optical delivery to the eye using transparent waveguides. In one embodiment, the present invention provides wearable augmented reality glasses incorporating a 3D display system with optical delivery to the eye using transparent waveguides. There are other embodiments as well.
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7.发明授权公开(公告)号：US11862937B1
公开(公告)日：2024-01-02
申请号：US17094662
申请日：2020-11-10
发明人： James W. Raring
IPC分类号： H01S5/22 , B82Y20/00 , H01S5/02 , H01S5/20 , H01S5/32 , H01S5/343 , H01S5/028 , H01S5/10 , H01S5/00 , H01S5/40
CPC分类号： H01S5/2201 , B82Y20/00 , H01S5/0202 , H01S5/0287 , H01S5/1085 , H01S5/2009 , H01S5/2031 , H01S5/3213 , H01S5/320275 , H01S5/34333 , H01S5/0014 , H01S5/028 , H01S5/3202 , H01S5/32025 , H01S5/4025
摘要： Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.
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公开(公告)号：US20230238777A1
公开(公告)日：2023-07-27
申请号：US18095891
申请日：2023-01-11
CPC分类号： H01S5/34333 , H01S5/22 , H01S5/0215 , H01S5/0217 , H01S5/2081 , H01S5/3211 , H01S5/32025 , H01S5/3202 , H01S5/0087 , H01S5/2009 , H01S5/4043
摘要： A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.
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9.发明授权公开(公告)号：US11677213B1
公开(公告)日：2023-06-13
申请号：US17525271
申请日：2021-11-12
发明人： James W. Raring
IPC分类号： H01S5/026 , H01S5/0625 , H01S5/343 , H01S5/22 , H01S5/10 , H01S5/32 , H01S5/00 , G02B6/126 , H01S3/081 , H01S5/323 , H01S5/125 , G02B6/12
CPC分类号： H01S5/0268 , G02B6/126 , H01S3/081 , H01S5/005 , H01S5/026 , H01S5/0625 , H01S5/1003 , H01S5/22 , H01S5/2201 , H01S5/3202 , H01S5/320275 , H01S5/32341 , H01S5/34333 , G02B2006/12085 , G02B2006/12121 , H01S5/125 , H01S5/32025
摘要： A monolithically integrated optical device. The device has a gallium and nitrogen containing substrate member having a surface region configured on either a non-polar or semi-polar orientation. The device also has a first waveguide structure configured in a first direction overlying a first portion of the surface region. The device also has a second waveguide structure integrally configured with the first waveguide structure. The first direction is substantially perpendicular to the second direction.
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