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    METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
    1.
    发明申请
    METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20170062585A1

    公开(公告)日：2017-03-02

    申请号：US15000786

    申请日：2016-01-19

    申请人： Kabushiki Kaisha Toshiba

    发明人： Tomoyuki Sakuma ,  Shinya Sato ,  Noboru Yokoyama ,  Akihiro Shimada

    IPC分类号： H01L29/66 ,  H01L29/423 ,  H01L21/3065 ,  H01L29/06 ,  H01L21/266

    CPC分类号： H01L29/0634 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/3065 ,  H01L29/167 ,  H01L29/4236 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/7811 ,  H01L29/7813

    摘要： According to one embodiment, a method for manufacturing a semiconductor device comprises making a first opening, ion-implanting an impurity of a second conductivity type, and forming a third semiconductor layer of the second conductivity type. The first opening is made in a second semiconductor layer. The second semiconductor layer is provided on a first semiconductor layer. The first opening extends in a second direction. A dimension in a third direction of an upper part of the first opening is longer than a dimension in the third direction of a lower part of the first opening. The third direction is perpendicular to the first direction and the second direction. The impurity of the second conductivity type is ion-implanted into a side surface of the lower part of the first opening. The third semiconductor layer of the second conductivity type is formed in an interior of the first opening.

    摘要翻译： 根据一个实施例，一种用于制造半导体器件的方法包括制造第一开口，离子注入第二导电类型的杂质，以及形成第二导电类型的第三半导体层。 第一开口在第二半导体层中制成。 第二半导体层设置在第一半导体层上。 第一开口沿第二方向延伸。 第一开口的上部的第三方向的尺寸比第一开口的下部的第三方向的尺寸长。 第三方向垂直于第一方向和第二方向。 第二导电类型的杂质被离子注入到第一开口的下部的侧表面中。 第二导电类型的第三半导体层形成在第一开口的内部。