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公开(公告)号：US10916646B2
公开(公告)日：2021-02-09
申请号：US16297776
申请日：2019-03-11
发明人： Daimotsu Kato , Toshiya Yonehara , Hiroshi Ono , Yosuke Kajiwara , Masahiko Kuraguchi , Tatsuo Shimizu
IPC分类号： H01L29/778 , H01L29/205 , H01L29/66 , H01L29/423 , H01L21/285 , H01L29/49
摘要： According to one embodiment, a semiconductor device includes first to third electrodes, first and second semiconductor regions, and a first insulating film. The first semiconductor region includes a first partial region, a second partial region, a third partial region between the first and second partial regions, a fourth partial region between the first and third partial regions, and a fifth partial region between the third and second partial regions. The second semiconductor region includes a sixth partial region and a seventh partial region. The third electrode overlaps the sixth and seventh partial regions. The first insulating film includes a portion provided between the third electrode and the third partial region, between the third electrode and the fourth partial region, between the third electrode and the fifth partial region, between the third electrode and the sixth partial region, and between the third electrode and the seventh partial region.
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公开(公告)号：US09947729B2
公开(公告)日：2018-04-17
申请号：US15058323
申请日：2016-03-02
发明人： Akio Amano , Tomoko Sugizaki , Daimotsu Kato , Tomio Ono
CPC分类号： H01L27/3244 , H01L27/3225 , H01L51/0037 , H01L51/5212 , H01L51/5218 , H01L51/5221 , H01L51/5275 , H01L2251/558
摘要： According to one embodiment, an organic electroluminescent element includes a substrate, a first electrode, a second electrode, an organic layer and a first conductive unit. The substrate is light-transmissive. The second electrode is provided between the substrate and the first electrode. The second electrode is light-transmissive. The second electrode includes a first region and a second region. A direction connecting the first region and the second region intersects a first direction connecting the substrate and the first electrode. The organic layer is provided between the second electrode and the first electrode. The first conductive unit is provided between the first region and a portion of the substrate. The first conductive unit is electrically connected with the second electrode. The first conductive unit includes a third region and a fourth region. A portion of the fourth region is disposed between the substrate and at least a portion of the third region.
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公开(公告)号：US11515411B2
公开(公告)日：2022-11-29
申请号：US17232201
申请日：2021-04-16
IPC分类号： H01L31/0256 , H01L21/31 , H01L21/469 , H01L29/778 , H01L29/205 , H01L29/20 , H01L29/423 , H01L29/51 , H01L29/66 , H01L21/28 , H01L21/02
摘要： According to one embodiment, a semiconductor device includes first to third electrodes, first and second semiconductor layers, a nitride layer, and an oxide layer. A direction from the second electrode toward the first electrode is aligned with a first direction. A position in the first direction of the third electrode is between the first electrode and the second electrode in the first direction. The first semiconductor layer includes first to fifth partial regions. The first partial region is between the fourth and third partial regions in the first direction. The second partial region is between the third and fifth partial regions in the first direction. The nitride layer includes first and second nitride regions. The second semiconductor layer includes first and second semiconductor regions. The oxide layer includes silicon and oxygen. The oxide layer includes first to third oxide regions.
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公开(公告)号：US10964802B2
公开(公告)日：2021-03-30
申请号：US16298172
申请日：2019-03-11
IPC分类号： H01L29/66 , H01L29/778 , H01L29/207 , H01L29/04
摘要： According to one embodiment, a semiconductor device includes first to third electrodes, first to third layers, and a first insulating layer. The first layer includes first to fifth partial regions. The first partial region is between the fourth and third partial regions. The second partial region is between the third and fifth partial regions. The first insulating layer includes first and second inter-layer regions. The second layer includes first and second intermediate regions. The first intermediate region is provided between the first partial region and the first inter-layer region. The second intermediate region is provided between the second partial region and the second inter-layer region. The third layer includes first to third nitride regions. The first inter-layer region is between the first intermediate region and the first nitride region. The second inter-layer region is between the second intermediate region and the second nitride region.
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公开(公告)号：US10243058B2
公开(公告)日：2019-03-26
申请号：US15681453
申请日：2017-08-21
发明人： Toshiya Yonehara , Hisashi Saito , Yosuke Kajiwara , Daimotsu Kato , Tatsuo Shimizu , Yasutaka Nishida
IPC分类号： H01L29/66 , H01L29/20 , H01L29/205 , H01L21/02 , H01L29/778 , H01L29/51 , H01L29/201 , H01L29/78 , H01L29/417 , H01L29/423
摘要： According to one embodiment, a semiconductor device includes a first semiconductor layer including a nitride semiconductor, a first electrode separated from the first semiconductor layer in a first direction, and a first insulating film including silicon and oxygen and being provided between the first semiconductor layer and the first electrode. The first insulating film has a first thickness in the first direction. The first insulating film includes a first position, and a distance between the first position and the first semiconductor layer is ½ of the first thickness. A first hydrogen concentration of hydrogen at the first position is 2.5×1019 atoms/cm3 or less.
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公开(公告)号：US09680124B2
公开(公告)日：2017-06-13
申请号：US14815541
申请日：2015-07-31
发明人： Daimotsu Kato , Hayato Kakizoe , Tomoaki Sawabe , Keiji Sugi , Atsushi Wada , Yukitami Mizuno , Tomio Ono , Shintaro Enomoto , Tomoko Sugizaki , Akio Amano , Yasushi Shinjo
CPC分类号： H01L51/5225 , H01L27/3202 , H01L51/0096 , H01L51/50 , H01L51/5215 , H01L51/5221 , H01L51/524 , H01L51/5271 , H01L2251/5361 , H05B33/0896
摘要： An organic electroluminescent device includes first and second electrode and an organic light emitting layer. The first electrode has an upper face. The organic light emitting layer is provided on the first electrode. The second electrode is provided on the organic light emitting layer. The second electrode includes a plurality of conductive parts. The conductive parts extend in a first direction parallel to the upper face and are arranged in a second direction. The second direction is parallel to the upper face and intersects with the first direction. When a length of each of the conductive parts in the second direction is set to W1 (micrometer), and a pitch of each of the conductive parts is set to P1 (micrometer). The W1 and the P1 satisfy a relationship of W1≧−647(1−W1/P1)+511 and a relationship of W1≦−882(1−W1/P1)+847.
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公开(公告)号：US11476336B2
公开(公告)日：2022-10-18
申请号：US16787351
申请日：2020-02-11
发明人： Hiroshi Ono , Akira Mukai , Yosuke Kajiwara , Daimotsu Kato , Aya Shindome , Masahiko Kuraguchi
IPC分类号： H01L29/778 , H01L29/205 , H01L29/207 , H01L29/20 , H01L23/29 , H01L29/423 , H01L29/51 , H01L29/40
摘要： According to one embodiment, a semiconductor device includes first, second and third electrodes, first and second semiconductor layers, and a first compound member. A position of the third electrode is between a position of the second electrode and a position of the first electrode. The first semiconductor layer includes first, second, third, fourth, and fifth partial regions. The fourth partial region is between the third and first partial regions. The fifth partial region is between the second and third partial regions. The second semiconductor layer includes first, second, and third semiconductor regions. The third semiconductor region is between the first partial region and the first electrode. The first compound member includes first compound portions between the third semiconductor region and the first electrode. A portion of the first electrode is between one of the first compound portions and an other one of the first compound portions.
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公开(公告)号：US20200027976A1
公开(公告)日：2020-01-23
申请号：US16298172
申请日：2019-03-11
IPC分类号： H01L29/778 , H01L29/04 , H01L29/207 , H01L29/66
摘要： According to one embodiment, a semiconductor device includes first to third electrodes, first to third layers, and a first insulating layer. The first layer includes first to fifth partial regions. The first partial region is between the fourth and third partial regions. The second partial region is between the third and fifth partial regions. The first insulating layer includes first and second inter-layer regions. The second layer includes first and second intermediate regions. The first intermediate region is provided between the first partial region and the first inter-layer region. The second intermediate region is provided between the second partial region and the second inter-layer region. The third layer includes first to third nitride regions. The first inter-layer region is between the first intermediate region and the first nitride region. The second inter-layer region is between the second intermediate region and the second nitride region.
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公开(公告)号：US10535744B2
公开(公告)日：2020-01-14
申请号：US16274411
申请日：2019-02-13
发明人： Tatsuo Shimizu , Toshiya Yonehara , Hiroshi Ono , Daimotsu Kato , Akira Mukai
IPC分类号： H01L29/40 , H01L29/20 , H01L29/205 , H01L29/778 , G06F1/18 , H01L29/51 , H01L29/423
摘要： A semiconductor device according to an embodiment includes a first nitride semiconductor layer; a second nitride semiconductor layer on the first nitride semiconductor layer; a first electrode and a second electrode disposed on or above the first nitride semiconductor layer; a gate electrode above the first nitride semiconductor layer; and a gate insulating layer, the gate insulating layer including a silicon oxide film and an aluminum oxynitride film, the aluminum oxynitride film disposed between the first nitride semiconductor layer and the silicon oxide film, a first atomic ratio of nitrogen relative to a sum of oxygen and nitrogen at a first position in the aluminum oxynitride film being higher than a second atomic ratio of nitrogen relative to a sum of oxygen and nitrogen at a second position in the aluminum oxynitride film, and the second position being closer to the silicon oxide film than the first position.
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公开(公告)号：US20190115461A1
公开(公告)日：2019-04-18
申请号：US16118603
申请日：2018-08-31
发明人： Toshiya Yonehara , Tatsuo Shimizu , Hiroshi Ono , Daimotsu Kato
IPC分类号： H01L29/778 , H01L29/49 , H01L29/20 , H01L29/417 , H01L29/423 , H01L23/532 , H01L29/06
CPC分类号： H01L29/778 , H01L23/5329 , H01L29/0649 , H01L29/2003 , H01L29/40111 , H01L29/41725 , H01L29/4232 , H01L29/42336 , H01L29/42352 , H01L29/4236 , H01L29/4238 , H01L29/4966 , H01L29/513 , H01L29/516 , H01L29/6684 , H01L29/7786 , H01L29/78391
摘要： In one embodiment, a semiconductor device is provided with a semiconductor layer made of a nitride semiconductor, a first gate electrode, a first structure body between the first gate electrode and the semiconductor layer, and a first insulating layer between the semiconductor layer and the first structure body. The first structure body has a first intermediate layer made of a conductor to suppress generation of charges at respective interfaces with adjacent layers, a first layer having dielectric property between the first gate electrode and the first intermediate layer, and a second layer having dielectric property between the first gate electrode and the first layer, and has dipoles at an interface between the first layer and the second layer.
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