公开(公告)号：US20030227338A1

公开(公告)日：2003-12-11

申请号：US10397876

申请日：2003-03-27

申请人： Kabushiki Kaisha Toshiba

发明人： Takashi Kawakubo ,  Ryoichi Ohara ,  Kazuhide Abe ,  Hiroshi Tsurumi ,  Hiroshi Yoshida ,  Ryuichi Fujimoto

IPC分类号： H03B005/32

CPC分类号： H03H9/173 ,  H03H9/0095 ,  H03H9/545 ,  H03H9/562 ,  H03H9/564 ,  H03H9/566 ,  H03H9/581 ,  H03H9/585 ,  H03H9/60 ,  H03H2009/02196

摘要： To provide a miniaturized voltage controlled oscillator which can oscillate simultaneously a plurality of frequencies and has high stability of frequency, an excellent low phase noise, small variation per hour, and a wide frequency variable range. A thin film bulk acoustic wave resonator using single crystal ferroelectric material equal to or smaller than 10 nullm in thickness whose direction of polarization is aligned to the direction of thickness is utilized as the piezoelectric member. The voltage controlled oscillator having large changing rate of the oscillation frequency of 0.01%/V or more and an extremely small phase noise is provided by changing the voltage applied to the electrodes.

摘要翻译： 为了提供能够同时振荡多个频率并且具有高频率稳定性，优异的低相位噪声，小时变化小和宽频率可变范围的小型化的压控振荡器。 作为压电部件，利用使用等于或小于10μm的偏振方向与厚度方向对准的单晶铁电材料的薄膜体声波谐振器。 通过改变施加到电极上的电压，提供振荡频率变化率大于0.01％/ V以上且极小相位噪声的压控振荡器。

公开(公告)号：US20040012463A1

公开(公告)日：2004-01-22

申请号：US10397176

申请日：2003-03-27

申请人： Kabushiki Kaisha Toshiba

发明人： Takashi Kawakubo ,  Kenya Sano ,  Ryoichi Ohara

IPC分类号： H03H009/56

CPC分类号： H03H9/173 ,  H03H3/04 ,  H03H9/02149 ,  H03H2003/0442

摘要： The present invention is intended to provide a thin film bulk acoustic wave resonator, which has a resonant excitation portion free from damage caused by etching, a high electromechanical coupling coefficient kt2 and a high quality coefficient Q value, and to provide a thin film bulk acoustic wave resonator having a plurality of different resonant frequencies, which can be formed on the same substrate without increasing number of lithography process. An internal cavity is provided in a semiconductor or insulative substrate such as crystal silicon. The thin film bulk acoustic wave resonator has a layered member comprising a first electrode film, a piezoelectric film and a second electrode film on a thin wall of e.g. single crystal over the internal cavity.

摘要翻译： 本发明旨在提供一种薄膜体声波谐振器，其具有不受腐蚀所引起的损伤，高机电耦合系数kt <2和高质量系数Q值的谐振激励部分，并且提供薄的 具有多个不同谐振频率的薄膜体声波谐振器，其可以在不增加数量的光刻处理的同一基板上形成。 在诸如晶体硅的半导体或绝缘衬底中提供内部空腔。 薄膜体声波谐振器具有层叠构件，该层叠构件包括第一电极膜，压电膜和第二电极膜。 单晶内腔。

公开(公告)号：US20030067368A1

公开(公告)日：2003-04-10

申请号：US10252105

申请日：2002-09-23

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Ryoichi Ohara ,  Kazuhide Abe ,  Takashi Kawakubo ,  Hiroshi Yoshida ,  Hiroshi Tsurumi ,  Ryuichi Fujimoto

IPC分类号： H03H009/58

CPC分类号： H03H9/605 ,  H03H9/0095 ,  H03H9/542 ,  H03H9/581 ,  H03H2009/02196

摘要： A high frequency filter comprises thin film piezoelectric resonators connected in series between the input/output nodes, thin film piezoelectric resonators connected in parallel between the input/output nodes and a variable voltage circuit adapted to change the voltage applied to at least either the thin film piezoelectric resonators connected in series or the thin film piezoelectric resonators connected in parallel. The resonance characteristic of at least either the thin film piezoelectric resonators connected in series or the thin film piezoelectric resonator connected in parallel is shifted by changing the voltage applied by the variable voltage circuit to change the pass characteristic of the filter.

摘要翻译： 高频滤波器包括串联连接在输入/输出节点之间的薄膜压电谐振器，并联连接在输入/输出节点之间的薄膜压电谐振器和可变电压电路，可变电压电路适于改变施加到至少薄膜的电压 串联连接的压电谐振器或并联连接的薄膜压电谐振器。 串联连接的薄膜压电谐振器或并联连接的薄膜压电谐振器中的至少一个的谐振特性通过改变由可变电压电路施加的电压来改变滤波器的通过特性而被移位。