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    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220093572A1

    公开(公告)日：2022-03-24

    申请号：US17468174

    申请日：2021-09-07

    申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

    发明人： Tatsuya HIRAKAWA

    IPC分类号： H01L25/07 ,  H01L23/00 ,  H01L23/049 ,  H01L23/373

    摘要： A semiconductor device of embodiments includes an insulating substrate, a first main terminal, a second main terminal, an output terminal, a first metal layer connected to the first main terminal, a second metal layer connected to the second main terminal, a third metal layer disposed between the first metal layer and the second metal layer and connected to the output terminal, a first semiconductor chip and a second semiconductor chip provided on the first metal layer, a third semiconductor chip and a fourth semiconductor chip provided on the third metal layer, and a conductive member on the second metal layer. Then, the second metal layer includes a slit. The conductive member is provided between the end portion of the second metal layer and the slit.

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200304035A1

    公开(公告)日：2020-09-24

    申请号：US16536921

    申请日：2019-08-09

    申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

    发明人： Eitaro MIYAKE ,  Hiroshi MATSUYAMA ,  Tatsuya HIRAKAWA ,  Kazuya KODANI

    IPC分类号： H02M7/00 ,  H01L23/00

    摘要： Provided is a semiconductor device according to an embodiment including: a main board; a first board provided on the main board; a second board provided on the main board; a first electrode member provided on the first board and having a first planar portion; a second electrode member provided on the first board and having a second planar portion; a third electrode member provided on the first board and having a third planar portion; a first semiconductor element provided on the first electrode member and having a first electrode and a second electrode; a second semiconductor element provided on the second electrode member and having a third electrode and a fourth electrode; a first wire electrically connecting the second electrode and the second electrode member; a second wire electrically connecting the fourth electrode and the third electrode member; a fourth electrode member provided on the second board and having a fourth planar portion; a fifth electrode member provided on the second board and having a fifth planar portion; a sixth electrode member provided on the second board and having a sixth planar portion; a third semiconductor element provided on the fourth electrode member and having a fifth electrode and a sixth electrode; a fourth semiconductor element provided on the fifth electrode member and having a seventh electrode and an eighth electrode; a third wire electrically connecting the sixth electrode and the fifth electrode member; a fourth wire electrically connecting the eighth electrode and the sixth electrode member; a first terminal plate connected to the first planar portion, the fourth planar portion, and a DC power supply; a second terminal plate connected to the second planar portion and the fifth planar portion; and a third terminal plate connected to the third planar portion, the sixth planar portion, and the DC power supply.

    SEMICONDUCTOR DEVICE
    5.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20230395485A1

    公开(公告)日：2023-12-07

    申请号：US18454413

    申请日：2023-08-23

    申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

    发明人： Tomohiro IGUCHI ,  Tatsuya HIRAKAWA

    IPC分类号： H01L23/498 ,  H01L23/04 ,  H01L23/31

    CPC分类号： H01L23/49861 ,  H01L23/041 ,  H01L23/3121 ,  H01L23/49811

    摘要： A semiconductor device according to an embodiment includes: an insulating substrate having a first metal layer and a second metal layer on a surface of the insulating substrate; a semiconductor chip including an upper electrode and a lower electrode, the upper electrode being electrically connected to the first metal layer, the lower electrode being electrically connected to the second metal layer; a first main terminal including a first end and a second end, the first end being electrically connected to the first metal layer; a second main terminal including a third end and a fourth end, the third end being electrically connected to the second metal layer; a first detection terminal being electrically connected between the first end and the second end of the first main terminal; and a second detection terminal being electrically connected to the first metal layer.

    SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210305147A1

    公开(公告)日：2021-09-30

    申请号：US17001559

    申请日：2020-08-24

    申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

    发明人： Tomohiro IGUCHI ,  Tatsuya HIRAKAWA

    IPC分类号： H01L23/498 ,  H01L23/04 ,  H01L23/31

    摘要： A semiconductor device according to an embodiment includes: an insulating substrate having a first metal layer and a second metal layer on a surface of the insulating substrate; a semiconductor chip including an upper electrode and a lower electrode, the upper electrode being electrically connected to the first metal layer, the lower electrode being electrically connected to the second metal layer; a first main terminal including a first end and a second end, the first end being electrically connected to the first metal layer; a second main terminal including a third end and a fourth end, the third end being electrically connected to the second metal layer; a first detection terminal being electrically connected between the first end and the second end of the first main terminal; and a second detection terminal being electrically connected to the first metal layer.