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    FLOATING GATE FIELD EFFECT TRANSISTORS FOR CHEMICAL AND/OR BIOLOGICAL SENSING
    1.
    发明申请
    FLOATING GATE FIELD EFFECT TRANSISTORS FOR CHEMICAL AND/OR BIOLOGICAL SENSING 有权
    用于化学和/或生物感测的浮动栅栏场效应晶体管

    公开(公告)号：US20090108831A1

    公开(公告)日：2009-04-30

    申请号：US12328893

    申请日：2008-12-05

    申请人： Kalle LEVON ,  Arifur Rahman ,  Tsunehiro Sai ,  Ben Zhao

    发明人： Kalle LEVON ,  Arifur Rahman ,  Tsunehiro Sai ,  Ben Zhao

    IPC分类号： G01N27/00

    CPC分类号： G01N27/4145 ,  G01N27/4148

    摘要： Specific ionic interactions with a sensing material that is electrically coupled with the floating gate of a floating gate-based ion sensitive field effect transistor (FGISFET) may be used to sense a target material. For example, an FGISFET can use (e.g., previously demonstrated) ionic interaction-based sensing techniques with the floating gate of floating gate field effect transistors. The floating gate can serves as a probe and an interface to convert chemical and/or biological signals to electrical signals, which can be measured by monitoring the change in the device's threshold voltage, VT.

    摘要翻译： 可以使用与浮置栅极离子敏感场效应晶体管（FGISFET）的浮动栅极电耦合的感测材料的特定离子相互作用来感测目标材料。 例如，FGISFET可以使用浮动栅极场效应晶体管的浮动栅极（例如，先前证明的）基于离子相互作用的感测技术。 浮动栅极可以用作探测器和将化学和/或生物信号转换为电信号的接口，这可以通过监测器件的阈值电压VT的变化来测量。

    Floating gate field effect transistors for chemical and/or biological sensing
    3.
    发明申请
    Floating gate field effect transistors for chemical and/or biological sensing 有权
    用于化学和/或生物传感的浮栅场效应晶体管

    公开(公告)号：US20050230271A1

    公开(公告)日：2005-10-20

    申请号：US11033046

    申请日：2005-01-11

    申请人： Kalle Levon ,  Arifur Rahman ,  Tsunehiro Sai ,  Ben Zhao

    发明人： Kalle Levon ,  Arifur Rahman ,  Tsunehiro Sai ,  Ben Zhao

    IPC分类号： G01N27/26 ,  G01N27/414

    CPC分类号： G01N27/4145 ,  G01N27/4148

    摘要： Specific ionic interactions with a sensing material that is electrically coupled with the floating gate of a floating gate-based ion sensitive field effect transistor (FGISFET) may be used to sense a target material. For example, an FGISFET can use (e.g., previously demonstrated) ionic interaction-based sensing techniques with the floating gate of floating gate field effect transistors. The floating gate can serves as a probe and an interface to convert chemical and/or biological signals to electrical signals, which can be measured by monitoring the change in the device's threshold voltage, VT.

    摘要翻译： 可以使用与浮置栅极离子敏感场效应晶体管（FGISFET）的浮动栅极电耦合的感测材料的特定离子相互作用来感测目标材料。 例如，FGISFET可以使用浮动栅极场效应晶体管的浮动栅极（例如，先前证明的）基于离子相互作用的感测技术。 浮动栅极可以用作探针和将化学和/或生物信号转换成电信号的接口，这可以通过监测器件的阈值电压V T T的变化来测量。

    Floating gate field effect transistors for chemical and/or biological sensing
    4.
    发明授权
    Floating gate field effect transistors for chemical and/or biological sensing 有权
    用于化学和/或生物传感的浮栅场效应晶体管

    公开(公告)号：US07884398B2

    公开(公告)日：2011-02-08

    申请号：US12328893

    申请日：2008-12-05

    申请人： Kalle Levon ,  Arifur Rahman ,  Tsunehiro Sai ,  Ben Zhao

    发明人： Kalle Levon ,  Arifur Rahman ,  Tsunehiro Sai ,  Ben Zhao

    IPC分类号： H01L27/148

    CPC分类号： G01N27/4145 ,  G01N27/4148

    摘要： Specific ionic interactions with a sensing material that is electrically coupled with the floating gate of a floating gate-based ion sensitive field effect transistor (FGISFET) may be used to sense a target material. For example, an FGISFET can use (e.g., previously demonstrated) ionic interaction-based sensing techniques with the floating gate of floating gate field effect transistors. The floating gate can serves as a probe and an interface to convert chemical and/or biological signals to electrical signals, which can be measured by monitoring the change in the device's threshold voltage, VT.

    摘要翻译： 可以使用与浮置栅极离子敏感场效应晶体管（FGISFET）的浮动栅极电耦合的感测材料的特定离子相互作用来感测目标材料。 例如，FGISFET可以使用浮动栅极场效应晶体管的浮动栅极（例如，先前证明的）基于离子相互作用的感测技术。 浮动栅极可以用作探测器和将化学和/或生物信号转换为电信号的接口，这可以通过监测器件的阈值电压VT的变化来测量。

    USING FLOATING GATE FIELD EFFECT TRANSISTORS FOR CHEMICAL AND/OR BIOLOGICAL SENSING
    5.
    发明申请
    USING FLOATING GATE FIELD EFFECT TRANSISTORS FOR CHEMICAL AND/OR BIOLOGICAL SENSING 审中-公开
    使用浮动栅栏场效应晶体管进行化学和/或生物传感

    公开(公告)号：US20090079414A1

    公开(公告)日：2009-03-26

    申请号：US12328888

    申请日：2008-12-05

    申请人： Kalle Levon ,  Arifur Rahman ,  Tsunehiro Sai ,  Ben Zhao

    发明人： Kalle Levon ,  Arifur Rahman ,  Tsunehiro Sai ,  Ben Zhao

    IPC分类号： G01R27/00

    CPC分类号： G01N27/4145 ,  G01N27/4148

    摘要： Specific ionic interactions with a sensing material that is electrically coupled with the floating gate of a floating gate-based ion sensitive field effect transistor (FGISFET) may be used to sense a target material. For example, an FGISFET can use (e.g., previously demonstrated) ionic interaction-based sensing techniques with the floating gate of floating gate field effect transistors. The floating gate can serves as a probe and an interface to convert chemical and/or biological signals to electrical signals, which can be measured by monitoring the change in the device's threshold voltage, VT.

    摘要翻译： 可以使用与浮置栅极离子敏感场效应晶体管（FGISFET）的浮动栅极电耦合的感测材料的特定离子相互作用来感测目标材料。 例如，FGISFET可以使用浮动栅极场效应晶体管的浮动栅极（例如，先前证明的）基于离子相互作用的感测技术。 浮动栅极可以用作探测器和将化学和/或生物信号转换为电信号的接口，这可以通过监测器件的阈值电压VT的变化来测量。

    Floating gate field effect transistors for chemical and/or biological sensing
    6.
    发明授权
    Floating gate field effect transistors for chemical and/or biological sensing 有权
    用于化学和/或生物传感的浮栅场效应晶体管

    公开(公告)号：US07462512B2

    公开(公告)日：2008-12-09

    申请号：US11033046

    申请日：2005-01-11

    申请人： Kalle Levon ,  Arifur Rahman ,  Tsunehiro Sai ,  Ben Zhao

    发明人： Kalle Levon ,  Arifur Rahman ,  Tsunehiro Sai ,  Ben Zhao

    IPC分类号： H01L21/00

    CPC分类号： G01N27/4145 ,  G01N27/4148

    摘要： Specific ionic interactions with a sensing material that is electrically coupled with the floating gate of a floating gate-based ion sensitive field effect transistor (FGISFET) may be used to sense a target material. For example, an FGISFET can use (e.g., previously demonstrated) ionic interaction-based sensing techniques with the floating gate of floating gate field effect transistors. The floating gate can serves as a probe and an interface to convert chemical and/or biological signals to electrical signals, which can be measured by monitoring the change in the device's threshold voltage, VT.

    摘要翻译： 可以使用与浮置栅极离子敏感场效应晶体管（FGISFET）的浮动栅极电耦合的感测材料的特定离子相互作用来感测目标材料。 例如，FGISFET可以使用浮动栅极场效应晶体管的浮动栅极（例如，先前证明的）基于离子相互作用的感测技术。 浮动栅极可以用作探测器和将化学和/或生物信号转换为电信号的接口，这可以通过监测器件的阈值电压VT的变化来测量。

    Methods of producing a conjugated oligomer exhibiting supramolecular π-conjugation extension, and resulting products of such methods
    7.
    发明授权
    Methods of producing a conjugated oligomer exhibiting supramolecular π-conjugation extension, and resulting products of such methods 有权
    产生显示超分子π共轭延伸的共轭低聚物的方法，以及所得方法的产物

    公开(公告)号：US07435852B2

    公开(公告)日：2008-10-14

    申请号：US11112717

    申请日：2005-04-22

    申请人： Kalle Levon ,  Tsunehiro Sai

    发明人： Kalle Levon ,  Tsunehiro Sai

    IPC分类号： C07C211/00

    CPC分类号： C09B59/00 ,  H01B1/128

    摘要： Methods for preparing an oligomer exhibiting supramolecular extension of π-conjugation are described. The manipulation of intra-oligomeric properties such as π-conjugation length and the precise architecture(s) resulting from inter-oligomeric variations resulting from supramolecular chemistry offers great promise in the design of nanoscale devices. As shown, self-assembly of the supramolecular structure can be induced by causing a molecule: dopant molar ratio to go beyond the predicted theoretical fully-doped molar ratio.

    摘要翻译： 描述了制备显示出π共轭的超分子延伸的低聚物的方法。 寡聚物性质的操作，例如π共轭长度和由超分子化学引起的低分子变化产生的精确结构在纳米级器件的设计中提供了巨大的前景。 如图所示，超分子结构的自组装可以通过使分子：掺杂剂摩尔比超过预测的理论充分掺杂摩尔比来诱导。

    Methods of producing a conjugated oligomer exhibiting supramolecular pi-conjugation extension, and resulting products of such methods
    8.
    发明申请
    Methods of producing a conjugated oligomer exhibiting supramolecular pi-conjugation extension, and resulting products of such methods 有权
    产生显示超分子π共轭延伸的共轭低聚物的方法，以及所得方法的产物

    公开(公告)号：US20060017045A1

    公开(公告)日：2006-01-26

    申请号：US11112717

    申请日：2005-04-22

    申请人： Kalle Levon ,  Tsunehiro Sai

    发明人： Kalle Levon ,  Tsunehiro Sai

    IPC分类号： H01B1/00 ,  H01B1/12 ,  C07C249/02

    CPC分类号： C09B59/00 ,  H01B1/128

    摘要： Methods for preparing an oligomer exhibiting supramolecular extension of π-conjugation are described. The manipulation of intra-oligomeric properties such as π-conjugation length and the precise architecture(s) resulting from inter-oligomeric variations resulting from supramolecular chemistry offers great promise in the design of nanoscale devices. As shown, self-assembly of the supramolecular structure can be induced by causing a molecule:dopant molar ratio to go beyond the predicted theoretical fully-doped molar ratio.

    摘要翻译： 描述了制备显示出π共轭的超分子延伸的低聚物的方法。 寡聚物性质的操作，例如π共轭长度和由超分子化学引起的低分子变化产生的精确结构在纳米级器件的设计中提供了巨大的前景。 如图所示，超分子结构的自组装可以通过使分子：掺杂剂摩尔比超过预测的理论充分掺杂摩尔比来诱导。