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    QUALITY CONTROL PROCESS FOR UMG-SI FEEDSTOCK
    2.
    发明申请
    QUALITY CONTROL PROCESS FOR UMG-SI FEEDSTOCK 失效
    UMG-SI FEEDSTOCK质量控制程序

    公开(公告)号：US20100327890A1

    公开(公告)日：2010-12-30

    申请号：US12770688

    申请日：2010-04-29

    申请人： Kamel Ounadjela ,  Marcin Walerysiak ,  Anis Jouini ,  Matthias Heuer ,  Omar Sidelkheir ,  Alain Blosse ,  Fritz Kirscht

    发明人： Kamel Ounadjela ,  Marcin Walerysiak ,  Anis Jouini ,  Matthias Heuer ,  Omar Sidelkheir ,  Alain Blosse ,  Fritz Kirscht

    IPC分类号： G01R31/26

    CPC分类号： C01B33/037 ,  Y10T117/1088 ,  Y10T117/1092

    摘要： A quality control process for determining the concentrations of boron and phosphorous in a UMG-Si feedstock batch is provided. A silicon test ingot is formed by the directional solidification of molten UMG-Si from a UMG-Si feedstock batch. The resistivity of the silicon test ingot is measured from top to bottom. Then, the resistivity profile of the silicon test ingot is mapped. From the resistivity profile of the silicon test ingot, the concentrations of boron and phosphorous of the UMG-Si silicon feedstock batch are calculated. Additionally, multiple test ingots may be grown simultaneously, with each test ingot corresponding to a UMG-Si feedstock batch, in a multi-crucible crystal grower.

    摘要翻译： 提供了一种用于测定UMG-Si原料批中硼和磷浓度的质量控制过程。 通过来自UMG-Si原料批次的熔融UMG-Si的定向凝固形成硅测试锭。 硅测试块的电阻率从上到下测量。 然后，映射硅测试锭的电阻率分布。 根据硅试块的电阻率分布，计算出UMG-Si硅原料批次中硼和磷的浓度。 另外，在多坩埚晶体种植者中，可以同时生长多个测试锭，每个测试锭对应于UMG-Si原料批次。

    Method and system for controlling resistivity in ingots made of compensated feedstock silicon
    4.
    发明授权
    Method and system for controlling resistivity in ingots made of compensated feedstock silicon 有权
    由补偿原料硅制成的锭的电阻率的方法和系统

    公开(公告)号：US08968467B2

    公开(公告)日：2015-03-03

    申请号：US12618577

    申请日：2009-11-13

    申请人： Fritz Kirscht ,  Marcin Walerysiak ,  Matthias Heuer ,  Anis Jouini ,  Kamel Ounadjela

    发明人： Fritz Kirscht ,  Marcin Walerysiak ,  Matthias Heuer ,  Anis Jouini ,  Kamel Ounadjela

    IPC分类号： C30B15/00 ,  C30B11/00 ,  C30B11/04 ,  C30B29/06

    CPC分类号： H01L22/26 ,  C30B11/006 ,  C30B11/04 ,  C30B29/06 ,  H01L31/0288 ,  H01L31/182 ,  H01L31/1876

    摘要： Techniques for controlling resistivity in the formation of a silicon ingot from compensated feedstock silicon material prepares a compensated, upgraded metallurgical silicon feedstock for being melted to form a silicon melt. The compensated, upgraded metallurgical silicon feedstock provides semiconductor predominantly of a single type (p-type or n-type) for which the process assesses the concentrations of boron and phosphorus and adds a predetermined amount of boron, phosphorus, aluminum and/or gallium. The process further melts the silicon feedstock with the boron, phosphorus, aluminum and/or gallium to form a molten silicon solution from which to perform directional solidification and maintains the homogeneity of the resistivity of the silicon throughout the ingot. A balanced amount of phosphorus can be optionally added to the aluminum and/or gallium. Resistivity may also be measured repeatedly during ingot formation, and additional dopant may be added in response, either repeatedly or continuously.

    摘要翻译： 用于控制从补偿的原料硅材料形成硅锭中的电阻率的技术准备补偿的升级冶金硅原料以便熔化以形成硅熔体。 补偿的升级冶金硅原料提供半导体主要是单一类型（p型或n型），其过程评估硼和磷的浓度并加入预定量的硼，磷，铝和/或镓。 该方法进一步用硼，磷，铝和/或镓熔化硅原料，以形成熔融硅溶液，从而进行定向凝固，并保持硅在整个锭中的电阻率的均匀性。 可以任选地在铝和/或镓中加入平衡量的磷。 也可以在晶锭形成期间重复地测量电阻率，并且可以重复地或连续地响应地添加另外的掺杂剂。

    METHOD AND SYSTEM FOR CONTROLLING RESISTIVITY IN INGOTS MADE OF COMPENSATED FEEDSTOCK SILICON
    5.
    发明申请
    METHOD AND SYSTEM FOR CONTROLLING RESISTIVITY IN INGOTS MADE OF COMPENSATED FEEDSTOCK SILICON 有权
    用于控制补偿馈电硅的功率的方法和系统

    公开(公告)号：US20100258768A1

    公开(公告)日：2010-10-14

    申请号：US12618577

    申请日：2009-11-13

    申请人： Fritz Kirscht ,  Marcin Walerysiak ,  Matthias Heuer ,  Anis Jouini ,  Kamel Ounadjela

    发明人： Fritz Kirscht ,  Marcin Walerysiak ,  Matthias Heuer ,  Anis Jouini ,  Kamel Ounadjela

    IPC分类号： H01B1/04 ,  B29C39/44

    CPC分类号： H01L22/26 ,  C30B11/006 ,  C30B11/04 ,  C30B29/06 ,  H01L31/0288 ,  H01L31/182 ,  H01L31/1876

    摘要： Techniques for controlling resistivity in the formation of a silicon ingot from compensated feedstock silicon material prepares a compensated, upgraded metallurgical silicon feedstock for being melted to form a silicon melt. The compensated, upgraded metallurgical silicon feedstock provides semiconductor predominantly of a single type (p-type or n-type) for which the process assesses the concentrations of boron and phosphorus and adds a predetermined amount of boron, phosphorus, aluminum and/or gallium. The process further melts the silicon feedstock with the boron, phosphorus, aluminum and/or gallium to form a molten silicon solution from which to perform directional solidification and maintains the homogeneity of the resistivity of the silicon throughout the ingot. A balanced amount of phosphorus can be optionally added to the aluminum and/or gallium. Resistivity may also be measured repeatedly during ingot formation, and additional dopant may be added in response, either repeatedly or continuously.

    摘要翻译： 用于控制从补偿的原料硅材料形成硅锭中的电阻率的技术准备补偿的升级冶金硅原料以便熔化以形成硅熔体。 补偿的升级冶金硅原料提供半导体主要是单一类型（p型或n型），其过程评估硼和磷的浓度并加入预定量的硼，磷，铝和/或镓。 该方法进一步用硼，磷，铝和/或镓熔化硅原料，以形成熔融硅溶液，从而进行定向凝固，并保持硅在整个锭中的电阻率的均匀性。 可以任选地在铝和/或镓中加入平衡量的磷。 也可以在晶锭形成期间重复地测量电阻率，并且可以重复地或连续地响应地添加另外的掺杂剂。