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1.发明授权公开(公告)号：US08906706B2
公开(公告)日：2014-12-09
申请号：US13415659
申请日：2012-03-08
申请人： Kanaiyalal C. Patel , Kurt A. Rubin
发明人： Kanaiyalal C. Patel , Kurt A. Rubin
IPC分类号： H01L21/00
CPC分类号： G11B5/746 , G11B5/855 , H01F41/34 , H01L21/266
摘要： A method of fabricating workpieces includes one or more layers on a substrate that are masked with an ion implantation mask comprising two or more layers. The mask layers include a first mask layer closer to the substrate, and a second mask layer on the first mask layer. The method also comprises ion implanting one or more of the layers on the substrate. Ion implantation may form portions with altered physical properties from the layers under the mask. The portions may form a plurality of non-magnetic regions corresponding to apertures in the mask.
摘要翻译： 制造工件的方法包括在衬底上的一层或多层，其被包含两层或多层的离子注入掩模掩蔽。 掩模层包括靠近基板的第一掩模层和第一掩模层上的第二掩模层。 该方法还包括在衬底上离子注入一层或多层。 离子注入可以形成具有从掩模下面的层具有改变的物理性质的部分。 这些部分可以形成对应于掩模中的孔的多个非磁性区域。
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2.发明申请SYSTEM, METHOD AND APPARATUS FOR MASK STRUCTURE FOR PATTERNING A WORKPIECE BY IONS 有权用于通过离子绘制工件的面板结构的系统，方法和装置公开(公告)号：US20130236987A1
公开(公告)日：2013-09-12
申请号：US13415659
申请日：2012-03-08
申请人： Kanaiyalal C. Patel , Kurt A. Rubin
发明人： Kanaiyalal C. Patel , Kurt A. Rubin
CPC分类号： G11B5/746 , G11B5/855 , H01F41/34 , H01L21/266
摘要： A method of fabricating workpieces includes one or more layers on a substrate that are masked with an ion implantation mask comprising two or more layers. The mask layers include a first mask layer closer to the substrate, and a second mask layer on the first mask layer. The method also comprises ion implanting one or more of the layers on the substrate. Ion implantation may form portions with altered physical properties from the layers under the mask. The portions may form a plurality of non-magnetic regions corresponding to apertures in the mask.
摘要翻译： 制造工件的方法包括在衬底上的一层或多层，其被包含两层或多层的离子注入掩模掩蔽。 掩模层包括靠近基板的第一掩模层和第一掩模层上的第二掩模层。 该方法还包括在衬底上离子注入一层或多层。 离子注入可以形成具有从掩模下面的层改变的物理性质的部分。 这些部分可以形成对应于掩模中的孔的多个非磁性区域。
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3.发明申请公开(公告)号：US20110143049A1
公开(公告)日：2011-06-16
申请号：US12639817
申请日：2009-12-16
CPC分类号： G11B5/8408 , C23C14/021
摘要： A disk that is identified as defective in a manufacturing process is reused for conditioning a deposition tool that deposits a magnetic material onto disks. After the disk has been identified as defective, a surface of the disk is cleaned in a cleaning tool to remove a lubricant material using a dry etch process. The cleaned disk is moved from the cleaning tool into the deposition tool. The deposition tool is conditioned by depositing the magnetic material onto the cleaned surface of the disk. Because the disk has been cleaned, reusing the defective disk to condition the deposition tool does not contaminate the deposition tool.
摘要翻译： 在制造过程中被识别为有缺陷的盘被重新用于调节将磁性材料沉积到盘上的沉积工具。 在盘被识别为有缺陷之后，在清洁工具中清洁盘的表面以使用干蚀刻工艺除去润滑剂材料。 清洁的盘从清洁工具移动到沉积工具中。 通过将磁性材料沉积在清洁的盘表面上来调节沉积工具。 因为磁盘已被清洁，重新使用有缺陷的磁盘来调节沉积工具不会污染沉积工具。
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4.发明申请METHOD FOR MANUFACTURING A MAGNETIC READ SENSOR WITH NARROW TRACK WIDTH USING AMORPHOUS CARBON AS A HARD MASK AND LOCALIZED CMP 有权使用非晶碳作为硬掩模和本地化CMP制造具有窄轨迹宽度的磁性读数传感器的方法公开(公告)号：US20130092654A1
公开(公告)日：2013-04-18
申请号：US13275728
申请日：2011-10-18
申请人： Hamid Balamane , Patrick M. Braganca , Jordan A. Katine , Jui-Lung Li , Yang Li , Kanaiyalal C. Patel , Neil L. Robertson , Samuel W. Yuan
发明人： Hamid Balamane , Patrick M. Braganca , Jordan A. Katine , Jui-Lung Li , Yang Li , Kanaiyalal C. Patel , Neil L. Robertson , Samuel W. Yuan
IPC分类号： G11B5/127
CPC分类号： G11B5/3163 , G01R33/093 , G11B5/3169 , G11B5/398
摘要： A method for manufacturing a magnetic read sensor at very narrow track widths. The method uses an amorphous carbon mask layer to pattern the sensor by ion milling, rather than a mask constructed of a material such as photoresist or DURIMIDE® which can bend over during ion milling at very narrow track widths. By using the amorphous carbon layer as the masking layer, the trackwidth can be very small, while avoiding this bending over of the mask that has been experienced with prior art methods. In addition, the track-width can be further reduced by using a reactive ion etching to further reduce the width of the amorphous carbon mask prior to patterning the sensor. The method also allows extraneous portions of the side insulation layer and hard bias layer to be removed above the sensor by a light CMP process.
摘要翻译： 一种以非常窄的轨道宽度制造磁读取传感器的方法。 该方法使用无定形碳掩模层通过离子研磨对传感器进行图案化，而不是由诸如光致抗蚀剂或DURIMIDE的材料构成的掩模，其可以在非常窄的轨道宽度的离子铣削过程中弯曲。 通过使用无定形碳层作为掩蔽层，轨道宽度可以非常小，同时避免了现有技术方法经历的掩模的弯曲。 此外，通过使用反应离子蚀刻，在图案化传感器之前进一步减小无定形碳掩模的宽度，可以进一步减小轨道宽度。 该方法还允许通过光CMP工艺在传感器上方去除侧绝缘层和硬偏置层的外部部分。
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5.发明授权Method for manufacturing a magnetic read sensor with narrow track width using amorphous carbon as a hard mask and localized CMP 有权使用无定形碳作为硬掩模和局部化CMP制造具有窄轨道宽度的磁读取传感器的方法公开(公告)号：US08617408B2
公开(公告)日：2013-12-31
申请号：US13275728
申请日：2011-10-18
申请人： Hamid Balamane , Patrick M. Braganca , Jordan A. Katine , Jui-Lung Li , Yang Li , Kanaiyalal C. Patel , Neil L. Robertson , Samuel W. Yuan
发明人： Hamid Balamane , Patrick M. Braganca , Jordan A. Katine , Jui-Lung Li , Yang Li , Kanaiyalal C. Patel , Neil L. Robertson , Samuel W. Yuan
IPC分类号： B44C1/22
CPC分类号： G11B5/3163 , G01R33/093 , G11B5/3169 , G11B5/398
摘要： A method for manufacturing a magnetic read sensor at very narrow track widths. The method uses an amorphous carbon mask layer to pattern the sensor by ion milling, rather than a mask constructed of a material such as photoresist or DURIMIDE® which can bend over during ion milling at very narrow track widths. By using the amorphous carbon layer as the masking layer, the trackwidth can be very small, while avoiding this bending over of the mask that has been experienced with prior art methods. In addition, the track-width can be further reduced by using a reactive ion etching to further reduce the width of the amorphous carbon mask prior to patterning the sensor. The method also allows extraneous portions of the side insulation layer and hard bias layer to be removed above the sensor by a light CMP process.
摘要翻译： 一种以非常窄的轨道宽度制造磁读取传感器的方法。 该方法使用无定形碳掩模层通过离子研磨对传感器进行图案化，而不是由诸如光致抗蚀剂或DURIMIDE的材料构成的掩模，其可以在非常窄的轨道宽度的离子铣削过程中弯曲。 通过使用无定形碳层作为掩蔽层，轨道宽度可以非常小，同时避免了现有技术方法经历的掩模的弯曲。 此外，通过使用反应离子蚀刻，在图案化传感器之前进一步减小无定形碳掩模的宽度，可以进一步减小轨道宽度。 该方法还允许通过光CMP工艺在传感器上方去除侧绝缘层和硬偏置层的外部部分。
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6.发明授权Wet etching silicon oxide during the formation of a damascene pole and adjacent structure 有权在形成镶嵌极和相邻结构期间湿蚀刻氧化硅公开(公告)号：US08432637B2
公开(公告)日：2013-04-30
申请号：US12943880
申请日：2010-11-10
IPC分类号： G11B5/127
CPC分类号： G11B5/315 , G11B5/1278 , G11B5/3116 , G11B5/3163 , G11B5/607
摘要： A magnetic head according to one embodiment includes a side gap layer comprising primarily silicon nitride, wherein outer sides of the side gap layer taper away from one another from a leading end of the side gap layer towards a trailing end of the side gap layer; a seed layer above the silicon nitride side gap layer; and a magnetic pole on the seed layer. A method for forming a magnetic head according to one embodiment includes etching a channel in a silicon oxide layer; forming a side gap layer comprising primarily silicon nitride in the channel; forming a seed layer above the side gap layer; plating a pole on the seed layer; and removing the silicon oxide layer by wet etching. Additional systems and methods are also presented.
摘要翻译： 根据一个实施例的磁头包括主要包括氮化硅的侧间隙层，其中侧间隙层的外侧从侧间隙层的前端向侧间隙层的后端彼此远离; 在氮化硅侧间隙层上方的晶种层; 和种子层上的磁极。 根据一个实施例的用于形成磁头的方法包括蚀刻氧化硅层中的沟道; 形成在所述通道中主要包含氮化硅的侧隙层; 在侧隙层上形成种子层; 在种子层上镀一个极点; 并通过湿蚀刻去除氧化硅层。 还介绍了其他系统和方法。
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7.发明申请WET ETCHING SILICON OXIDE DURING THE FORMATION OF A DAMASCENE POLE AND ADJACENT STRUCTURE 有权在形成一个大气孔和相似结构期间浸蚀氧化硅公开(公告)号：US20120113544A1
公开(公告)日：2012-05-10
申请号：US12943880
申请日：2010-11-10
CPC分类号： G11B5/315 , G11B5/1278 , G11B5/3116 , G11B5/3163 , G11B5/607
摘要： A magnetic head according to one embodiment includes a side gap layer comprising primarily silicon nitride, wherein outer sides of the side gap layer taper away from one another from a leading end of the side gap layer towards a trailing end of the side gap layer; a seed layer above the silicon nitride side gap layer; and a magnetic pole on the seed layer. A method for forming a magnetic head according to one embodiment includes etching a channel in a silicon oxide layer; forming a side gap layer comprising primarily silicon nitride in the channel; forming a seed layer above the side gap layer; plating a pole on the seed layer; and removing the silicon oxide layer by wet etching. Additional systems and methods are also presented.
摘要翻译： 根据一个实施例的磁头包括主要包括氮化硅的侧间隙层，其中侧间隙层的外侧从侧间隙层的前端向侧间隙层的后端彼此远离; 在氮化硅侧间隙层上方的晶种层; 和种子层上的磁极。 根据一个实施例的用于形成磁头的方法包括蚀刻氧化硅层中的沟道; 形成在所述通道中主要包含氮化硅的侧隙层; 在侧隙层上形成种子层; 在种子层上镀一个极点; 并通过湿蚀刻去除氧化硅层。 还介绍了其他系统和方法。
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