Method for manufacturing a magnetoresistive sensor using simultaneously formed hard bias and electrical lapping guide
    1.
    发明授权
    Method for manufacturing a magnetoresistive sensor using simultaneously formed hard bias and electrical lapping guide 有权
    使用同时形成的硬偏置和电研磨导向器制造磁阻传感器的方法

    公开(公告)号:US08778198B2

    公开(公告)日:2014-07-15

    申请号:US13172739

    申请日:2011-06-29

    IPC分类号: B44C1/22

    摘要: A method for manufacturing a magnetic sensor using an electrical lapping guide deposited and patterned simultaneously with a hard bias structure of the sensor material. The method includes depositing a sensor material, and patterning and ion milling the sensor material to define a track width of the sensor. A magnetic, hard bias material is then deposited and a second patterning and ion milling process is performed to simultaneously define the back edge of an electrical lapping guide and a back edge of the sensor.

    摘要翻译: 一种用传感器材料的硬偏置结构沉积和图案化的电研磨导向器制造磁传感器的方法。 该方法包括沉积传感器材料,以及图案化和离子铣削传感器材料以限定传感器的轨道宽度。 然后沉积磁性,硬偏置材料,并且执行第二图案化和离子铣削工艺以同时限定电研磨引导件的后边缘和传感器的后边缘。

    Method for manufacturing a magnetic read sensor with narrow track width using amorphous carbon as a hard mask and localized CMP
    3.
    发明授权
    Method for manufacturing a magnetic read sensor with narrow track width using amorphous carbon as a hard mask and localized CMP 有权
    使用无定形碳作为硬掩模和局部化CMP制造具有窄轨道宽度的磁读取传感器的方法

    公开(公告)号:US08617408B2

    公开(公告)日:2013-12-31

    申请号:US13275728

    申请日:2011-10-18

    IPC分类号: B44C1/22

    摘要: A method for manufacturing a magnetic read sensor at very narrow track widths. The method uses an amorphous carbon mask layer to pattern the sensor by ion milling, rather than a mask constructed of a material such as photoresist or DURIMIDE® which can bend over during ion milling at very narrow track widths. By using the amorphous carbon layer as the masking layer, the trackwidth can be very small, while avoiding this bending over of the mask that has been experienced with prior art methods. In addition, the track-width can be further reduced by using a reactive ion etching to further reduce the width of the amorphous carbon mask prior to patterning the sensor. The method also allows extraneous portions of the side insulation layer and hard bias layer to be removed above the sensor by a light CMP process.

    摘要翻译: 一种以非常窄的轨道宽度制造磁读取传感器的方法。 该方法使用无定形碳掩模层通过离子研磨对传感器进行图案化,而不是由诸如光致抗蚀剂或DURIMIDE的材料构成的掩模,其可以在非常窄的轨道宽度的离子铣削过程中弯曲。 通过使用无定形碳层作为掩蔽层,轨道宽度可以非常小,同时避免了现有技术方法经历的掩模的弯曲。 此外,通过使用反应离子蚀刻,在图案化传感器之前进一步减小无定形碳掩模的宽度,可以进一步减小轨道宽度。 该方法还允许通过光CMP工艺在传感器上方去除侧绝缘层和硬偏置层的外部部分。

    Three terminal magnetic sensing device having a track width defined in a localized region by a patterned insulator and methods of making the same
    4.
    发明授权
    Three terminal magnetic sensing device having a track width defined in a localized region by a patterned insulator and methods of making the same 有权
    具有通过图案化绝缘体在局部区域中限定的轨道宽度的三端子磁感测装置及其制造方法

    公开(公告)号:US08045298B2

    公开(公告)日:2011-10-25

    申请号:US12004235

    申请日:2007-12-20

    IPC分类号: G11B5/33

    摘要: A three terminal magnetic sensing device (TTM) having a trackwidth defined in a localized region by a patterned insulator, and methods of making the same, are disclosed. In one illustrative example, one or more first sensor layers (e.g. which includes a “base” layer) are formed over a collector substrate. A patterned insulator which defines a central opening exposing a top layer of the one or more first sensor layers is then formed. The central opening has a width for defining a trackwidth (TW) of the TTM. Next, one or more second sensor layers are formed over the top layer of the one or more first sensor layers through the central opening of the patterned insulator. The one or more second sensor layers may include a tunnel barrier layer formed in contact with the top layer of the one or more first sensor layers, as well as an “emitter” layer. Various embodiments and techniques are provided.

    摘要翻译: 公开了具有通过图案化绝缘体在局部区域中限定的轨道宽度的三端磁感测装置(TTM)及其制造方法。 在一个说明性示例中,在收集器基板上形成一个或多个第一传感器层(例如包括“基”层)。 然后形成限定了暴露一个或多个第一传感器层的顶层的中心开口的图案化绝缘体。 中心开口具有用于定义TTM的轨道宽度(TW)的宽度。 接下来,通过图案化的绝缘体的中心开口,在一个或多个第一传感器层的顶层上形成一个或多个第二传感器层。 一个或多个第二传感器层可以包括与一个或多个第一传感器层的顶层接触形成的隧道势垒层以及“发射极”层。 提供了各种实施例和技术。

    METHOD FOR FABRICATING NARROW MAGNETIC READ WIDTH TMR/CPP SENSORS
    6.
    发明申请
    METHOD FOR FABRICATING NARROW MAGNETIC READ WIDTH TMR/CPP SENSORS 有权
    用于制造NARROW MAGNETIC READ WIDTH TMR / CPP SENSORS的方法

    公开(公告)号:US20100024201A1

    公开(公告)日:2010-02-04

    申请号:US12184054

    申请日:2008-07-31

    申请人: Quang Le Jui-Lung Li

    发明人: Quang Le Jui-Lung Li

    IPC分类号: H04R31/00

    摘要: A method for manufacturing a manufacturing a magnetoresistive sensor that allows the sensor to be constructed with a very narrow and well controlled track width. The method includes depositing a layer of diamond like carbon over a series of sensor layers. A first mask is then formed to define a sensor, and an ion milling is performed to remove sensor material not protected by the first mask. Then, a second mask is formed, and a hard bias layer is deposited to the thickness of the sensor layers. The second mask is then lifted off and a CMP is performed to remove the first mask structure. Because the all areas other than the area directly over the sensor are substantially planar (due to the removal of the second mask and the low level of the hard bias material) a quick, gentle CMP can be used to remove the first mask layer even if the first mask is small, such as for definition of a very narrow track-width sensor.

    摘要翻译: 一种用于制造磁阻传感器的方法,该传感器允许传感器被构造成具有非常窄且良好控制的轨道宽度。 该方法包括在一系列传感器层上沉积一层类似金刚石的碳。 然后形成第一掩模以限定传感器,并且执行离子铣削以去除未被第一掩模保护的传感器材料。 然后,形成第二掩模,并且在传感器层的厚度上沉积硬偏置层。 然后将第二掩模剥离并执行CMP以除去第一掩模结构。 由于直接在传感器上方的区域以外的所有区域基本上是平面的(由于第二掩模的移除和硬偏置材料的低水平),可以使用快速柔和的CMP来去除第一掩模层,即使 第一个掩模很小,例如用于定义非常窄的轨道宽度传感器。

    Manufacturable CMP assisted liftoff process to fabricate write pole for perpendicular recording heads
    7.
    发明授权
    Manufacturable CMP assisted liftoff process to fabricate write pole for perpendicular recording heads 失效
    可制造的CMP辅助脱模工艺,用于制造垂直记录头的写入极

    公开(公告)号:US07398592B2

    公开(公告)日:2008-07-15

    申请号:US11093962

    申请日:2005-03-29

    申请人: Quang Le Jui-Lung Li

    发明人: Quang Le Jui-Lung Li

    IPC分类号: G11B5/127 H04R31/00

    摘要: This invention describes a manufacturable method, including a CMP liftoff process, for removing masking materials after ion milling for fabricating the write pole of a magnetic head. Significant parameters for the CMP assisted liftoff process include the thickness of the remaining mask materials after the write pole ion milling for effective CMP assisted liftoff, the thickness of the dielectric fill material deposited to protect the write pole during the CMP liftoff step, and the type of CMP slurry, polishing pad and the polishing conditions that are required to yield satisfactory results.

    摘要翻译: 本发明描述了一种可制造的方法,包括CMP去除工艺,用于在用于制造磁头的写磁极的离子铣削之后去除掩模材料。 用于CMP辅助剥离工艺的重要参数包括用于有效CMP辅助剥离的写入极离子铣削之后的剩余掩模材料的厚度,在CMP去除步骤期间沉积以保护写入极的介电填充材料的厚度和类型 的CMP浆料,抛光垫以及产生令人满意的结果所需的抛光条件。

    Method for producing high resolution nano-imprinting masters
    8.
    发明授权
    Method for producing high resolution nano-imprinting masters 有权
    生产高分辨率纳米压印机的方法

    公开(公告)号:US07341825B2

    公开(公告)日:2008-03-11

    申请号:US11442097

    申请日:2006-05-25

    IPC分类号: G03F7/00

    摘要: A method for producing high resolution nano-imprinting masters is disclosed. The method inverts the negative features of an exposed and developed positive e-beam resist to positive features in the patterned silicon nitride layer of the nano-imprinting master. A first, oxidation resistant, mask layer is used to pattern a DLC layer deposited on the silicon nitride layer. After patterning the DLC layer, the negative features of the DLC layer are filled with deposited metal, which creates a second mask layer subsequent to the removal of the remaining DLC layer. The second mask layer is used to etch the silicon nitride layer, creating the final nano-imprinting master.

    摘要翻译: 公开了一种生产高分辨率纳米压印机的方法。 该方法将曝光和显影的正电子束抗蚀剂的负面特征反转到纳米压印母版的图案化氮化硅层中的正特征。 使用第一抗氧化掩模层对沉积在氮化硅层上的DLC层进行图案化。 在图案化DLC层之后,DLC层的负面特征被沉积的金属填充,其在除去剩余的DLC层之后产生第二掩模层。 第二掩模层用于蚀刻氮化硅层,形成最终的纳米压印母版。

    Three terminal magnetic sensing devices having base lead layers in-plane with collector substrate materials and methods of making the same
    9.
    发明申请
    Three terminal magnetic sensing devices having base lead layers in-plane with collector substrate materials and methods of making the same 失效
    具有与集电体基板材料在一起的基极引线层的三端子磁感测装置及其制造方法

    公开(公告)号:US20070238198A1

    公开(公告)日:2007-10-11

    申请号:US11239178

    申请日:2005-09-29

    IPC分类号: H01L21/00

    摘要: Three terminal magnetic sensing devices (TTMs) having base lead layers in-plane with collector substrate materials, and methods of making the same, are disclosed. In one illustrative example, a collector substrate having an elevated region and a recessed region adjacent the elevated region is provided. An insulator layer is formed in full-film over the collector substrate, and a base lead layer is formed in full-film over the insulator layer and in-plane with semiconductor materials of the elevated region. The insulator materials and the base lead materials that are formed over the elevated region are removed. A sensor stack structure having an emitter region and a base region is then formed over the elevated region such that part of the base region is formed over an end of the base lead layer. A base conductive via may be formed to contact base lead materials of the base lead layer at a suitable distance away from the sensor stack structure. Advantageously, the base conductive via formation may occur without causing damage to the sensor stack structure. Also, the base lead layer is formed in the recessed region of the collector substrate prior to the formation of the sensor stack structure such that the TTM may be entirely in-situ manufactured. Furthermore, the trackwidth of the TTM may be defined directly by the elevated region of the collector substrate. The TTM is suitable for incorporation into nanoscale devices which increase areal recording densities, therefore aiding the revolution in magnetic storage.

    摘要翻译: 公开了具有与集电器基板材料在一起的基极引线层的三端子磁感测装置(TTM)及其制造方法。 在一个说明性示例中,提供了具有升高区域和与升高区域相邻的凹陷区域的收集器基板。 在集电体基板上形成绝缘体层,并且在绝缘体层上形成基极引线层,并且与升高区域的半导体材料在同一平面内形成基极引线层。 去除在升高区域上形成的绝缘体材料和基底引线材料。 然后在升高的区域上形成具有发射极区域和基极区域的传感器堆叠结构,使得基极区域的一部分形成在基极引线层的一端上。 可以形成基底导电通孔,以在离传感器堆叠结构适当的距离处接触基底引线层的基底引线材料。 有利地,可以在不会对传感器堆叠结构造成损害的情况下发生基底导电通孔形成。 此外,在形成传感器堆叠结构之前,基极引线层形成在集电体基板的凹陷区域中,使得TTM可以完全原位制造。 此外,TTM的轨道宽度可以由收集器基板的升高区域直接定义。 TTM适合纳入纳米级器件,增加面积记录密度,从而有助于磁存储的革命。

    Protective layer for CMP assisted lift-off process and method of fabrication
    10.
    发明申请
    Protective layer for CMP assisted lift-off process and method of fabrication 审中-公开
    CMP辅助剥离工艺的保护层和制造方法

    公开(公告)号:US20070183093A1

    公开(公告)日:2007-08-09

    申请号:US11350345

    申请日:2006-02-07

    IPC分类号: G11B5/147

    摘要: A magnetic head is disclosed having a write head with an encapsulated protected pole structure, which includes a P3 pole tip. A protective layer surrounds at least a portion of the P3 pole tip, and an encapsulating material layer surrounds a portion of the protective layer. Also disclosed is a method of fabrication for a write head with an encapsulated protected pole structure.

    摘要翻译: 公开了一种具有带有封装保护极结构的写头的磁头,其包括P3极尖。 保护层包围P3极尖的至少一部分,并且封装材料层围绕保护层的一部分。 还公开了一种用于具有封装的保护极结构的写入头的制造方法。