Gas flow control in a wafer processing system having multiple chambers for performing same process
    1.
    发明授权
    Gas flow control in a wafer processing system having multiple chambers for performing same process 失效
    在具有用于执行相同处理的多个室的晶片处理系统中的气体流量控制

    公开(公告)号:US06843882B2

    公开(公告)日:2005-01-18

    申请号:US10263556

    申请日:2002-10-02

    摘要: A system for processing substrates comprises a plurality of process chambers. Each process chamber includes an inlet gas distribution member connected to an inlet gas line to distribute gas from the inlet gas line into the process chamber, and a gas outlet. The inlet gas distribution member has an inlet gas distribution member impedance to a gas flow through the inlet gas distribution member into the process chamber. The plurality of process chambers are substantially identical. A source gas delivery line is connected to the inlet gas lines of the plurality of process chambers to supply a gas flow to be divided into the inlet gas lines. A plurality of tunable upstream gas restrictors are each disposed in one of the inlet gas lines connected to the inlet gas distribution members of the process chambers and are configured to adjust a flow rate into the corresponding process chamber.

    摘要翻译: 用于处理衬底的系统包括多个处理室。 每个处理室包括连接到入口气体管线以将气体从入口气体管线分配到处理室中的入口气体分配构件和气体出口。 入口气体分配构件具有入口气体分配构件对通过入口气体分配构件的气体流入处理室的阻抗。 多个处理室基本相同。 源气体输送管线连接到多个处理室的入口气体管线,以供应待分成入口气体管线的气流。 多个可调节的上游气体限制器分别设置在连接到处理室的入口气体分配构件的入口气体管线中的一个中,并且被配置为调节进入相应处理室的流量。