公开(公告)号：US06607595B1

公开(公告)日：2003-08-19

申请号：US09677788

申请日：2000-10-02

申请人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hasimoto ,  Isamu Akasaki

发明人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hasimoto ,  Isamu Akasaki

IPC分类号： C30B2514

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/025

摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlXGa1-xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1-XN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1-xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1-xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

摘要翻译： 本文公开了（1）一种使用其中n型氮化镓化合物半导体（Al x Ga 1-X N）的n层是双层结构的氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，包括 低载流子浓度的n层和高载流子浓度的n +层，前者与绝缘的氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，其包括含有较低浓度的p型杂质的低杂质浓度的iL层和iH层 含有较高浓度的p型杂质的高杂质浓度，前者与n层相邻; （3）具有上述特征的发光半导体器件和（4）由有机金属化合物具有受控导电性的n型氮化镓系化合物半导体（Al x Ga 1-x N）的层的制造方法， 通过以受控的混合比将含硅气体和其它原料气体一起供给到气相外延。

公开(公告)号：US06984536B2

公开(公告)日：2006-01-10

申请号：US10052347

申请日：2002-01-23

申请人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

发明人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

IPC分类号： H01L21/20

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/025

摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

摘要翻译： 本文公开了（1）使用氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，其中n层n 型氮化镓化合物半导体（Al x Ga 1-x N）是包括低载流子浓度的n层和n < 高载流子浓度的+层，前者与绝缘氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻， ; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，包括相对较低的含有p型杂质的低杂质浓度的i L层 低浓度和高浓度的含有p型杂质的高杂质浓度的i H +层，前者与n层相邻; （3）具有上述两个特征的发光半导体器件和（4）制造n型氮化镓系化合物半导体层的方法（Al x Ga Ga 1-x N），通过气相外延从有机金属化合物具有受控的导电性，通过以可控混合比将含硅气体和其它原料气体一起供给到一起。

公开(公告)号：US06472690B1

公开(公告)日：2002-10-29

申请号：US09677789

申请日：2000-10-02

申请人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

发明人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/025

摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

摘要翻译： 这里公开的是（1）使用其中n型氮化镓化合物半导体（Al x Ga 1-x N）的n层是双层结构的氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，包括 低载流子浓度的n层和高载流子浓度的n +层，前者与绝缘的氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，其包括含有较低浓度的p型杂质的低杂质浓度的iL层和iH层 含有较高浓度的p型杂质的高杂质浓度，前者与n层相邻; （3）具有上述特征的发光半导体器件和（4）由有机金属化合物具有受控导电性的n型氮化镓系化合物半导体（Al x Ga 1-x N）的层的制造方法， 通过以受控的混合比将含硅气体和其它原料气体一起供给到气相外延。

公开(公告)号：US5278433A

公开(公告)日：1994-01-11

申请号：US926022

申请日：1992-08-07

申请人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

发明人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

IPC分类号： H01L33/00 ,  H01L33/02 ,  H01L33/32

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/025

摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) in which the n-layer of n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) is of double-layer structure including an n-layer of low carrier concentration and an n.sup.+ -layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an i.sub.L -layer of low impurity concentration containing p-type impurities in comparatively low concentration and an i.sub.H -layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

摘要翻译： 这里公开的是（1）使用其中n型氮化镓化合物半导体（Al x Ga 1-x N）的n层是双层结构的氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，包括 低载流子浓度的n层和高载流子浓度的n +层，前者与绝缘的氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，其包括含有较低浓度的p型杂质的低杂质浓度的iL层和iH层 含有较高浓度的p型杂质的高杂质浓度，前者与n层相邻; （3）具有上述特征的发光半导体器件和（4）由有机金属化合物具有受控导电性的n型氮化镓系化合物半导体（Al x Ga 1-x N）的层的制造方法， 通过以受控的混合比将含硅气体和其它原料气体一起供给到气相外延。

公开(公告)号：US06830992B1

公开(公告)日：2004-12-14

申请号：US09677781

申请日：2000-10-02

申请人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

发明人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

IPC分类号： H01L2120

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/025

摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

摘要翻译： 这里公开的是（1）使用其中n型氮化镓化合物半导体（Al x Ga 1-x N）的n层是双层结构的氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，包括 低载流子浓度的n层和高载流子浓度的n +层，前者与绝缘氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，其包括含有较低浓度的p型杂质的低杂质浓度的iL层和iH层 含有较高浓度的p型杂质的高杂质浓度，前者与n层相邻; （3）具有上述特征的发光半导体器件和（4）由有机金属化合物具有受控导电性的n型氮化镓系化合物半导体（Al x Ga 1-x N）的层的制造方法， 通过以受控的混合比将含硅气体和其它原料气体一起供给到气相外延。

公开(公告)号：US06472689B1

公开(公告)日：2002-10-29

申请号：US09677787

申请日：2000-10-02

申请人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

发明人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/025

摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

摘要翻译： 这里公开的是（1）使用其中n型氮化镓化合物半导体（Al x Ga 1-x N）的n层是双层结构的氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，包括 低载流子浓度的n层和高载流子浓度的n +层，前者与绝缘的氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，其包括含有较低浓度的p型杂质的低杂质浓度的iL层和iH层 含有较高浓度的p型杂质的高杂质浓度，前者与n层相邻; （3）具有上述特征的发光半导体器件和（4）由有机金属化合物具有受控导电性的n型氮化镓系化合物半导体（Al x Ga 1-x N）的层的制造方法， 通过以受控的混合比将含硅气体和其它原料气体一起供给到气相外延。

公开(公告)号：US06249012B1

公开(公告)日：2001-06-19

申请号：US08956950

申请日：1997-10-23

申请人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

发明人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/025

摘要： A semiconductor device having an n-type layer of gallium nitride that is doped with silicon and has a resistively ranging from 3×10−1 &OHgr;cm to 8×10−3 &OHgr;cm or a carrier concentration ranging from 6×1016/cm3 to 3×1018/cm3.

摘要翻译： 一种半导体器件，其具有掺杂硅的n型氮化镓层，其电阻范围为3×10 -1Ω〜8×10 -3Ω/ cm或载流子浓度为6×10 16 / cm 3〜3×10 18 / cm 3。

公开(公告)号：US5733796A

公开(公告)日：1998-03-31

申请号：US556232

申请日：1995-11-09

申请人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

发明人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

IPC分类号： H01L33/00 ,  H01L33/02 ,  H01L33/32 ,  H01L21/20

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/025

摘要： A light-emitting semiconductor device using a gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) having an i.sub.L -layer of insulating gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) containing a low concentration of p-type impurities. An i.sub.H -layer of insulating gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) containing a high concentration of p-type impurities is adjacent to the i.sub.L -layer. An n-layer of n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) of low carrier concentration is adjacent to the i.sub.L -layer. An n.sup.+ -layer of n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) of high carrier concentration doped with n-type impurities is adjacent to the n-layer.

摘要翻译： 使用具有含有低浓度p型杂质的绝缘氮化镓化合物半导体（Al x Ga 1-x N，包括x = 0）的iL层的氮化镓系化合物半导体（Al x Ga 1-x N）的发光半导体装置。 含有高浓度p型杂质的绝缘氮化镓化合物半导体（Al x Ga 1-x N，包括x = 0）的iH层与iL层相邻。 低载流子浓度的n型氮化镓化合物半导体（Al x Ga 1-x N，包括x = 0）的n层与iL层相邻。 n型氮化镓化合物半导体（Al x Ga 1-x N，包括x = 0）的n +层与n型杂质掺杂的高载流子浓度相邻。

公开(公告)号：US06593599B1

公开(公告)日：2003-07-15

申请号：US09417778

申请日：1999-10-14

申请人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

发明人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/025

摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

公开(公告)号：US06362017B1

公开(公告)日：2002-03-26

申请号：US09586607

申请日：2000-06-02

申请人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

发明人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

IPC分类号： H01L2100

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/025

摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

摘要翻译： 这里公开的是（1）使用其中n型氮化镓化合物半导体（Al x Ga 1-x N）的n层是双层结构的氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，包括 低载流子浓度的n层和高载流子浓度的n +层，前者与绝缘的氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，其包括含有较低浓度的p型杂质的低杂质浓度的iL层和iH层 含有较高浓度的p型杂质的高杂质浓度，前者与n层相邻; （3）具有上述特征的发光半导体器件和（4）由有机金属化合物具有受控导电性的n型氮化镓系化合物半导体（Al x Ga 1-x N）的层的制造方法， 通过以受控的混合比将含硅气体和其它原料气体一起供给到气相外延。