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    Shelf unit for communication system
    3.
    发明授权
    Shelf unit for communication system 有权
    通讯系统货架单元

    公开(公告)号：US06731851B2

    公开(公告)日：2004-05-04

    申请号：US10055576

    申请日：2002-01-23

    申请人： Seiichiro Sato ,  Katsuki Matsunaga ,  Katsumi Kanasaki ,  Tomoyuki Hongoh

    发明人： Seiichiro Sato ,  Katsuki Matsunaga ,  Katsumi Kanasaki ,  Tomoyuki Hongoh

    IPC分类号： G02B600

    CPC分类号： H05K7/1435 ,  G02B6/4452 ,  H05K5/0021 ,  H05K7/1422

    摘要： The present invention relates to a shelf unit including a shelf having a box-like shape with an open front face and a plurality of modules having guide rails, the guide rail being engageable with a guide rail of a neighboring module. The module is inserted into the shelf through the open front face such that the guide rail slide along the guide rail of the neighboring module. The module is connected to the neighboring module with the guide rail being engaged with the guide rail of the neighboring guide rail.

    摘要翻译： 本发明涉及一种搁架单元，其包括具有敞开的前表面的盒状形状的托架和具有导轨的多个模块，该导轨可与相邻模块的导轨接合。 模块通过开放的前表面插入搁板，使得导轨沿相邻模块的导轨滑动。 模块连接到相邻模块，导轨与相邻导轨的导轨相接合。

    SFP module mounting structure
    5.
    发明授权
    SFP module mounting structure 有权
    SFP模块安装结构

    公开(公告)号：US07204710B1

    公开(公告)日：2007-04-17

    申请号：US11376104

    申请日：2006-03-16

    申请人： Seiichiro Sato ,  Kenji Tsutsumi ,  Hiroshi Takawa ,  Kenji Toshimitsu ,  Takashi Inoue

    发明人： Seiichiro Sato ,  Kenji Tsutsumi ,  Hiroshi Takawa ,  Kenji Toshimitsu ,  Takashi Inoue

    IPC分类号： H01R13/62

    CPC分类号： G02B6/3897 ,  G02B6/4452 ,  G06K2209/01 ,  H01R12/7076 ,  H01R12/88 ,  H01R13/658

    摘要： An SFP module mounting structure whereby the region of a printed wiring board for mounting SFP modules is enlarged and thus the SFP modules can be mounted with high density. A swing mechanism constituted by the coupling between a holder and a base allows the holder to be swung in directions toward and away from the printed wiring board. Thus, when mounting an SFP module, the SFP module can be inserted into the holder with the holder kept in an obliquely raised state relative to the printed wiring board. Also, when detaching the SFP module, the SFP module can be pulled out of the holder with the holder obliquely raised from the printed wiring board.

    摘要翻译： SFP模块安装结构，由此扩大用于安装SFP模块的印刷线路板的区域，从而可以高密度地安装SFP模块。 通过保持器和基座之间的联接构成的摆动机构允许保持器在朝向和远离印刷线路板的方向上摆动。 因此，当安装SFP模块时，SFP模块可以插入保持器中，保持器相对于印刷线路板保持在倾斜的状态。 此外，拆卸SFP模块时，SFP模块可以从保持架中拉出，并将夹持器从印刷电路板倾斜升高。

    Apparatus for processing substrates
    6.
    发明授权
    Apparatus for processing substrates 失效
    用于处理衬底的设备

    公开(公告)号：US6074515A

    公开(公告)日：2000-06-13

    申请号：US44812

    申请日：1998-03-20

    申请人： Izuru Iseki ,  Seiichiro Sato ,  Yusuke Muraoka

    发明人： Izuru Iseki ,  Seiichiro Sato ,  Yusuke Muraoka

    IPC分类号： B65G49/07 ,  H01L21/304 ,  H01L21/677 ,  C23F1/02 ,  B05C3/02 ,  B05C11/00 ,  B08B13/00

    CPC分类号： H01L21/67781 ,  Y10S134/902 ,  Y10S414/136 ,  Y10S414/137 ,  Y10S414/138 ,  Y10S414/14 ,  Y10S414/141

    摘要： In a substrate processing apparatus receiving substrates held in a common carrier in a horizontal attitude, the substrates are transferred in the horizontal attitude from the common carrier to an exclusive carrier. The exclusive carrier is rotatable on a horizontal axis. By rotating the exclusive carrier, the substrates are turned from the horizontal attitude to a vertical attitude. Then, the substrates held in the vertical attitude are taken out of the exclusive carrier and transferred to a processing part for processing in the vertical attitude. This allows a simple and speedy turn of the plurality of substrates. Further, even the apparatus for processing the substrates in a vertical attitude can transfer the substrates into and out of the apparatus in the horizontal attitude by using the common carrier.

    摘要翻译： 在以水平姿态接收保持在公共载体中的基板的基板处理装置中，将基板从水平姿态从公共载体转移到专用载体。 专用载体可在水平轴上旋转。 通过旋转专用载体，基板从水平姿态转换成垂直姿态。 然后，将保持在垂直姿态的基板从专用载体中取出并转移到处理部分，以垂直姿态处理。 这允许多个基板的简单且快速的转动。 此外，即使用于以垂直姿态处理基板的装置也可以通过使用公共载体以基准姿态将基板传送到设备中。

    Wafer and method for manufacturing switch wafer
    7.
    发明授权
    Wafer and method for manufacturing switch wafer 失效
    晶圆及制造开关晶圆的方法

    公开(公告)号：US4690484A

    公开(公告)日：1987-09-01

    申请号：US813649

    申请日：1985-12-26

    申请人： Hiroki Oba ,  Seiichi Aoki ,  Akira Niinuma ,  Seiichiro Sato

    发明人： Hiroki Oba ,  Seiichi Aoki ,  Akira Niinuma ,  Seiichiro Sato

    IPC分类号： H01H11/00 ,  H01H13/02 ,  H01H13/04 ,  H01R13/516

    CPC分类号： H01H11/0056 ,  Y10T29/49105 ,  Y10T29/49121

    摘要： A method for manufacturing a switch includes the steps of forming integrally a clip for clamping a movable contact out of a flat terminal member configured in hoop material by bending uprightly a projected portion of the terminal member, and then insert-molding the thus bent terminal member at the bottom of a box body made of insulating material to hold the integrally formed clip inside the box body.

    摘要翻译： 一种制造开关的方法包括以下步骤：一体地形成夹子，用于通过直接弯曲所述端子构件的突出部分来将由可动触头夹持在由环形材料构成的扁平端子构件中，然后插入模制所述弯曲的端子构件 在由绝缘材料制成的盒体的底部，以将整体形成的夹子保持在箱体内。

    Method of and apparatus for evaluating crystal rate in silicon thin film
    9.
    发明授权
    Method of and apparatus for evaluating crystal rate in silicon thin film 失效
    评估硅薄膜晶体率的方法和装置

    公开(公告)号：US5314831A

    公开(公告)日：1994-05-24

    申请号：US965996

    申请日：1992-10-23

    申请人： Sadao Hirae ,  Noriyuki Kondo ,  Seiichiro Sato

    发明人： Sadao Hirae ,  Noriyuki Kondo ,  Seiichiro Sato

    IPC分类号： G01N21/88 ,  G01N21/33 ,  G01N21/84 ,  G01N21/93 ,  G01N21/956 ,  G02F1/136 ,  G02F1/1368 ,  H01L21/66 ,  H01L29/786

    CPC分类号： G01N21/8422 ,  G01N21/33 ,  H01L22/12

    摘要： Light in an ultraviolet region is applied to a first sample of single-crystalline silicon substrate and a sample of silicon thin film to be evaluated respectively, to obtain wavelength dependency of a ratio (reflection intensity ratio) K(.lambda.) between reflection light intensity values of the samples. A straight line connecting points indicating reflection intensity values at wavelengths 235 nm and 320 nm is obtained to subtract an actual reflection intensity ratio Kr from a virtual reflection intensity ratio Ki provided by the straight line with respect to a wavelength of 270 nm, thereby obtaining an index .DELTA.Ks. In a similar manner, an index .DELTA.Ka is obtained as to a second sample of silicon which is composed of only true amorphous phases. The degree of non-crystallization of the silicon thin film to be obtained is evaluated by comparing the index .DELTA.Ks with the index .DELTA.Ka.

    摘要翻译： 将紫外线区域的光分别施加到单晶硅基板的第一样本和硅薄膜样品，以分别评价反射光强度值（反射强度比）K（λ）之间的反射光强度值 的样品。 获得连接指示波长235nm和320nm处的反射强度值的点的直线，从相对于波长270nm的直线提供的虚拟反射强度比Ki减去实际反射强度比Kr，从而获得 指数DELTA Ks。 以类似的方式，获得关于仅由真实无定形相组成的硅的第二样品的折射率DELTA Ka。 通过将指数DELTA Ks与指数DELTA Ka进行比较来评价待获得的硅薄膜的非结晶度。