PATTERN FORMING METHOD
    1.
    发明申请
    PATTERN FORMING METHOD 审中-公开
    图案形成方法

    公开(公告)号:US20090220896A1

    公开(公告)日:2009-09-03

    申请号:US12392905

    申请日:2009-02-25

    IPC分类号: G03F7/20

    CPC分类号: G03F7/11 G03F7/0757 G03F7/095

    摘要: A pattern forming method has forming a lower layer film on a film to be processed, forming a silicon-containing intermediate film containing a protecting group which is removed by an acid, on said lower layer film, forming a resist film on said silicon-containing intermediate film, exposing a predetermined region of said resist film to light, and developing said resist film with a developer.

    摘要翻译: 图案形成方法在被处理膜上形成下层膜,在所述下层膜上形成含有被酸去除的保护基的含硅中间膜,在所述含硅物质上形成抗蚀剂膜 中间膜,将所述抗蚀剂膜的预定区域曝光,并用显影剂显影所述抗蚀剂膜。

    Method for forming resist pattern
    2.
    发明授权
    Method for forming resist pattern 失效
    形成抗蚀剂图案的方法

    公开(公告)号:US08084192B2

    公开(公告)日:2011-12-27

    申请号:US12260659

    申请日:2008-10-29

    IPC分类号: G03F7/26

    摘要: A method for forming a resist pattern, includes forming a lower layer film, forming an intermediate film on the lower layer film, forming a photoresist film containing a photoacid-generating agent on the intermediate film, exposing the photoresist film, and developing the photoresist film. The lower layer film contains at least any one of a free acid, a thermoacid-generating agent, and a photoacid-generating agent, on a substrate to be treated.

    摘要翻译: 一种形成抗蚀剂图案的方法,包括形成下层膜,在下层膜上形成中间膜,在中间膜上形成含有光致产生剂的光致抗蚀剂膜,曝光光致抗蚀剂膜,并使光致抗蚀剂膜显影 。 下层膜在待处理的基材上含有游离酸,热生酸剂和光致酸产生剂中的至少任一种。