利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

19 条记录 (耗时 0.022 秒)

    Method for producing diamond by a DC plasma jet
    1.
    发明授权
    Method for producing diamond by a DC plasma jet 失效
    通过DC等离子体射流生产金刚石的方法

    公开(公告)号：US5565249A

    公开(公告)日：1996-10-15

    申请号：US57823

    申请日：1993-05-07

    申请人： Kazuaki Kurihara ,  Kenichi Sasaki ,  Tsukasa Itani ,  Motonobu Kawarada

    发明人： Kazuaki Kurihara ,  Kenichi Sasaki ,  Tsukasa Itani ,  Motonobu Kawarada

    IPC分类号： C23C16/27 ,  H05H1/34 ,  H05H1/48 ,  B05D3/06

    CPC分类号： C23C16/276 ,  H05H1/48 ,  H05H2001/3426 ,  H05H2001/3452

    摘要： A process for gas phase synthesis of diamond using a DC plasma jet where a plasma jet generated by DC arc discharge using a DC plasma torch is made to strike a substrate and grow diamond on the substrate, wherein use is made of a plurality of plasma torch anodes, these are arranged coaxially in a telescoped structure, a magnetic field is applied to these in accordance with need to cause the arc to rotate or the electrode is rotated so as to perform gas phase synthesis of diamond.

    摘要翻译： 使用DC等离子体射流进行气相合成金刚石的方法，其中使用DC等离子体焰炬通过直流电弧放电产生的等离子体射流进行冲击，并在衬底上生长金刚石，其中使用多个等离子体焰炬 阳极，它们同轴地布置在可伸缩结构中，根据需要使电弧旋转或电极旋转以对金刚石进行气相合成，施加磁场。

    DC plasma jet CVD method for producing diamond
    2.
    发明授权
    DC plasma jet CVD method for producing diamond 失效
    DC等离子体CVD法制造金刚石

    公开(公告)号：US5538765A

    公开(公告)日：1996-07-23

    申请号：US417787

    申请日：1995-04-05

    申请人： Kazuaki Kurihara ,  Kenichi Sasaki ,  Tsukasa Itani ,  Motonobu Kawarada

    发明人： Kazuaki Kurihara ,  Kenichi Sasaki ,  Tsukasa Itani ,  Motonobu Kawarada

    IPC分类号： C23C16/27 ,  H05H1/34 ,  H05H1/48 ,  B05D3/06 ,  H05H1/24

    CPC分类号： C23C16/276 ,  H05H1/48 ,  H05H2001/3426 ,  H05H2001/3452

    摘要： A process for producing diamond includes a step of bringing a columnar cathode and a tubular pilot anode provided concentrically around the cathode, into proximity to a plasma jetting port of a front end portion of a tubular main anode provided concentrically around the pilot anode. According to the process, a voltage is applied across the cathode and the pilot anode to convert a pilot gas to the form of a plasma. Then, the cathode is moved away from the pilot anode along a common axis. The process also includes the step of holding the discharge voltage between the cathode and the pilot anode at a first preselected voltage, and then applying voltage across the cathode and the main anode to convert a main gas to the form of a plasma. Subsequently, at least the pilot anode is moved away from the main anode along the common axis while maintaining the discharge voltage between the cathode and the pilot anode at the first preselected voltage. The process further includes the steps of holding the discharge voltage between the cathode and the main anode at a second preselected voltage and jetting the main gas in the form of plasma from the jetting port while generating a main arc between the main anode and the cathode.

    摘要翻译： 制造金刚石的方法包括使围绕阴极同心设置的柱状阴极和管状引导阳极接近于围绕导向阳极同心设置的管状主阳极的前端部分的等离子体喷射口的步骤。 根据该过程，跨越阴极和导向阳极施加电压以将导向气体转换为等离子体的形式。 然后，阴极沿着公共轴线从导向阳极移开。 该方法还包括以第一预选电压在阴极和导向阳极之间保持放电电压，然后在阴极和主阳极上施加电压以将主气体转换成等离子体的形式的步骤。 随后，至少引导阳极沿着公共轴线从主阳极移开，同时在第一预选电压下保持阴极和导向阳极之间的放电电压。 该方法还包括以下步骤：以第二预选电压在阴极和主阳极之间保持放电电压，并且在主阳极和阴极之间产生主电弧的同时从喷射口喷射等离子体形式的主气体。

    Vapor phase diamond synthesis method
    3.
    发明授权
    Vapor phase diamond synthesis method 失效
    气相金刚石合成法

    公开(公告)号：US06248400B1

    公开(公告)日：2001-06-19

    申请号：US08912369

    申请日：1997-08-18

    申请人： Kazuaki Kurihara ,  Kenichi Sasaki ,  Tsukasa Itani ,  Shinobu Akashi

    发明人： Kazuaki Kurihara ,  Kenichi Sasaki ,  Tsukasa Itani ,  Shinobu Akashi

    IPC分类号： C23C1627

    CPC分类号： C23C16/01 ,  C23C16/276 ,  H04R31/003 ,  H04R2307/023

    摘要： A DC plasma jet CVD process having a high film deposition rate is employed. A material having low adhesion with diamond is used for a substrate. A diamond film automatically peels from the substrate at the time of cooling. Gas is recycled because gas utilization efficiency is low. In this case, deposition of carbon can be prevented by setting a gas flow velocity to at least 5 m/s in the proximity of an anodic point.

    摘要翻译： 采用具有高膜沉积速率的DC等离子体喷射CVD工艺。 与金刚石具有低粘合性的材料用于基材。 在冷却时，金刚石膜从基材自动剥离。 由于天然气利用效率低，气体被回收利用。 在这种情况下，通过将阳极点附近的气体流速设定为至少5m / s，可以防止碳沉积。

    Magnetic recording medium and magnetic recording device
    8.
    发明申请
    Magnetic recording medium and magnetic recording device 有权
    磁记录介质和磁记录装置

    公开(公告)号：US20050271902A1

    公开(公告)日：2005-12-08

    申请号：US10982198

    申请日：2004-11-04

    申请人： Norikazu Nakamura ,  Tsukasa Itani ,  Yukiko Oshikubo ,  Shinichi Nakayama ,  Takashi Toyoguchi

    发明人： Norikazu Nakamura ,  Tsukasa Itani ,  Yukiko Oshikubo ,  Shinichi Nakayama ,  Takashi Toyoguchi

    IPC分类号： G11B5/62 ,  G11B5/65 ,  G11B5/72 ,  G11B5/725

    CPC分类号： G11B5/72

    摘要： A magnetic recording medium having excellent durability and corrosion resistance as well as a magnetic recording device equipped with the magnetic recording medium is provided. The protective layer of the magnetic recording medium is composed of two layers, that is, a lower layer contacting with the magnetic layer and an upper layer on the lower layer. The internal stress of the lower layer is made smaller than that of the upper layer, and the surface free energy of the lower layer is made smaller than that of the upper layer.

    摘要翻译： 提供具有优异的耐久性和耐腐蚀性的磁记录介质以及配备有磁记录介质的磁记录装置。 磁记录介质的保护层由两层构成，即与磁性层接触的下层和下层上的上层。 使下层的内应力小于上层的内应力，使下层的表面自由能小于上层的表面自由能。

    Manufacturing of a semiconductor device and the manufacturing method
    9.
    发明授权
    Manufacturing of a semiconductor device and the manufacturing method 有权
    半导体器件的制造及其制造方法

    公开(公告)号：US08513805B2

    公开(公告)日：2013-08-20

    申请号：US12038497

    申请日：2008-02-27

    申请人： Tsukasa Itani

    发明人： Tsukasa Itani

    IPC分类号： H01L23/48

    CPC分类号： H01L23/53238 ,  H01L21/76828 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A technology that improves the reliability of a semiconductor device and realizes a high performance by a laminated structure that has enough barrier properties against copper, reduces the wire delay time by lowering the capacitance between wirings and improves the adhesion between wirings is provided. There is a semiconductor device having: a first copper wiring layer, a first barrier layer on the first copper wiring layer, a silicon oxide series porous insulating layer on the first barrier layer, a second barrier layer on the silicon oxide series porous insulating layer, and a second copper wiring layer on the second barrier layer, wherein at least one of the first barrier layer and the second barrier layer consists of an amorphous carbon film, wherein a silicon series insulating layer is directly connected between the amorphous carbon film and any of the first copper wiring layer or the second copper wiring layer.

    摘要翻译： 提高半导体器件的可靠性并通过具有足够的铜屏障性能的层压结构实现高性能的技术通过降低布线之间的电容来减少导线延迟时间，并且提供了布线之间的粘附。 具有：第一铜布线层，第一铜布线层上的第一阻挡层，第一阻挡层上的氧化硅系多孔绝缘层，氧化硅系多孔绝缘层上的第二阻挡层， 以及在所述第二阻挡层上的第二铜布线层，其中所述第一阻挡层和所述第二阻挡层中的至少一个由非晶碳膜构成，其中，所述无定形碳膜与所述非晶碳膜之间直接连接， 第一铜布线层或第二铜布线层。

    Magnetic recording medium, head slider and manufacturing methods therefore
    10.
    发明申请
    Magnetic recording medium, head slider and manufacturing methods therefore 有权
    磁记录介质，磁头滑块及制造方法

    公开(公告)号：US20080259497A1

    公开(公告)日：2008-10-23

    申请号：US11986517

    申请日：2007-11-21

    申请人： Norikazu Nakamura ,  Hiroshi Chiba ,  Yoshiharu Kasamatsu ,  Takayuki Musashi ,  Yukiko Oshikubo ,  Tsukasa Itani

    发明人： Norikazu Nakamura ,  Hiroshi Chiba ,  Yoshiharu Kasamatsu ,  Takayuki Musashi ,  Yukiko Oshikubo ,  Tsukasa Itani

    IPC分类号： G11B5/60

    CPC分类号： G11B5/725 ,  G11B5/82

    摘要： A magnetic recording medium and head slider that can furnish excellent head flying stability, a magnetic recording device having excellent head flying stability, and a method for manufacturing, in a short time, a magnetic recording medium and head slider that can furnish such excellent head flying stability, are provided. For both of the magnetic recording medium and head slider, the protective layers are each composed of two layers, that is, a lower layer and an upper layer thereon; the ionization potential of the lower layer is made to be smaller than that of the upper layer; and the surface free energy of the upper layer is made to be 45 mN/m or less.

    摘要翻译： 能够提供优异的头部飞行稳定性的磁记录介质和磁头滑动器，具有优异的头部飞行稳定性的磁记录装置，以及在短时间内制造能够提供优异的头部飞行的磁记录介质和磁头滑块的方法 稳定性。 对于磁记录介质和磁头滑块，保护层各自由两层构成，即下层和上层; 使下层的电离电位小于上层的电离电位; 上层的表面自由能为45mN / m以下。