公开(公告)号：US5154949A

公开(公告)日：1992-10-13

申请号：US841307

申请日：1992-02-28

申请人： Hitoshi Shindo ,  Takeshi Ichikawa ,  Osamu Ikeda ,  Kazuaki Ohmi ,  Shigeyuki Matsumoto

发明人： Hitoshi Shindo ,  Takeshi Ichikawa ,  Osamu Ikeda ,  Kazuaki Ohmi ,  Shigeyuki Matsumoto

IPC分类号： H01L21/285 ,  H01L21/768

CPC分类号： H01L21/28562 ,  H01L21/76879

摘要： A process for forming an additive-containing Al film of good quality according to the CVD method utilizing an alkyl aluminum hydride, a gas containing an additive and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of additive-containing Al.

摘要翻译： 根据使用氢化烷基铝，含有添加剂和氢的气体的CVD法形成具有良好质量的含添加剂的Al膜的方法，其是优异的沉积膜形成工艺，其还能够选择性沉积含添加剂的Al 。

公开(公告)号：US5134092A

公开(公告)日：1992-07-28

申请号：US587844

申请日：1990-09-25

申请人： Shigeyuki Matsumoto ,  Osamu Ikeda ,  Kazuaki Ohmi

发明人： Shigeyuki Matsumoto ,  Osamu Ikeda ,  Kazuaki Ohmi

IPC分类号： H01L21/285 ,  H01L21/768

CPC分类号： H01L21/28562 ,  H01L21/76879

摘要： A process for forming a deposited film comprises the steps of;(a) disposing in a space for forming a deposited film a substrate having an electron donative surface;(b) introducing to the space for forming a deposited film i) a gas comprising an organic metal compound containing a tungsten atom and ii) a hydrogen gas; and(c) forming a tungsten film on the electron donative surface.

公开(公告)号：US06025243A

公开(公告)日：2000-02-15

申请号：US257294

申请日：1994-06-09

申请人： Kazuaki Ohmi ,  Osamu Ikeda ,  Shigeyuki Matsumoto

发明人： Kazuaki Ohmi ,  Osamu Ikeda ,  Shigeyuki Matsumoto

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L23/54

CPC分类号： H01L21/76843 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76879 ,  H01L2924/0002 ,  Y10S148/107

摘要： A deposited film formation method comprises the steps of:(a) feeding a gas of an organometallic compound containing molybdenum atom and hydrogen gas onto a substrate having an electron donative surface; and(b) maintaining the temperature of the electron donative surface within the range of the decomposition temperature of the organometallic compound or lower and 800.degree. C. or lower to form a molybdenum film on the electron donative surface.

摘要翻译： 沉积膜形成方法包括以下步骤：（a）将含有钼原子和氢气的有机金属化合物的气体供给到具有给电子表面的基板上; 和（b）将供电表面的温度保持在有机金属化合物的分解温度范围内或更低至800℃或更低，以在电子给体表面上形成钼膜。

公开(公告)号：US5330633A

公开(公告)日：1994-07-19

申请号：US913918

申请日：1992-07-17

申请人： Shigeyuki Matsumoto ,  Osamu Ikeda

发明人： Shigeyuki Matsumoto ,  Osamu Ikeda

IPC分类号： C23C16/20 ,  C23C16/46 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  C23C14/34 ,  C23C16/00

CPC分类号： H01L21/28562 ,  H01L21/32051 ,  H01L21/76879

摘要： A process for forming a metal film comprises the steps of arranging a substrate in a space for formation of the film, introducing an alkylaluminum hydride gas and hydrogen gas into the space and heating directly the substrate to form a metal film comprising aluminum as main component on the surface of the substrate.

摘要翻译： 一种用于形成金属膜的方法包括以下步骤：将基板布置在用于形成膜的空间中，将烷基铝氢化物气体和氢气引入到空间中并直接加热基板以形成包含铝作为主要成分的金属膜 衬底的表面。

公开(公告)号：US5151305A

公开(公告)日：1992-09-29

申请号：US656960

申请日：1991-02-19

申请人： Shigeyuki Matsumoto ,  Osamu Ikeda

发明人： Shigeyuki Matsumoto ,  Osamu Ikeda

IPC分类号： C23C16/20 ,  C23C16/46 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768

CPC分类号： H01L21/28562 ,  H01L21/32051 ,  H01L21/76879

摘要： A process for forming a metal film comprises the steps of arranging a substrate in a space for formation of the film, introducing an alkylaluminum hydride gas and hydrogen gas into the space and heating directly the substrate to form a metal film comprising aluminum as main component on the surface of the substrate.

公开(公告)号：US06245661B1

公开(公告)日：2001-06-12

申请号：US08362210

申请日：1994-12-22

申请人： Shigeyuki Matsumoto ,  Osamu Ikeda

发明人： Shigeyuki Matsumoto ,  Osamu Ikeda

IPC分类号： H01L214763

CPC分类号： H01L23/485 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： The semiconductor circuit device is provided with a first wiring layer connected to a semiconductor substrate through a contact hole in an insulation film formed on a main surface of the semiconductor substrate, and a second wiring layer connected with the first wiring layer through a through-hole in an interlayer insulation film formed on the first wiring layer, wherein the first wiring is substantially flat on the contact hole and the area of the through-hole is smaller than that of the contact hole.

摘要翻译： 半导体电路器件设置有通过形成在半导体衬底的主表面上的绝缘膜中的接触孔连接到半导体衬底的第一布线层和通过通孔连接到第一布线层的第二布线层 在形成在第一布线层上的层间绝缘膜中，其中第一布线在接触孔上基本平坦，并且通孔的面积小于接触孔的面积。

公开(公告)号：US5492734A

公开(公告)日：1996-02-20

申请号：US261883

申请日：1994-06-17

申请人： Shigeyuki Matsumoto ,  Osamu Ikeda

发明人： Shigeyuki Matsumoto ,  Osamu Ikeda

IPC分类号： C23C16/04 ,  C23C16/20 ,  H01L21/285 ,  H01L21/768 ,  B05D3/06 ,  B05D3/00 ,  C23C16/00

CPC分类号： H01L21/76879 ,  C23C16/04 ,  C23C16/20 ,  H01L21/28562

摘要： This invention provides a method of forming a deposition film serving as a high-quality wiring layer having good stress migration durability against any material such as a non-monocrystalline material. A substrate is located in a deposition film formation space, a gas of an alkylaluminum halide is supplied to the deposition film formation space, and an aluminum film is selectively formed on an electron donor surface at a partial pressure of the alkylaluminum halide of 7.times.10.sup.-3 Torr to 9.times.10.sup.-2 Torr in the range of a decomposition temperature or more of the alkylaluminum halide and 450.degree. C. or less. When deposition is to be performed on the non-monocrystalline material, a chemical treatment for terminating with hydrogen atoms a non-electron donor surface of a substrate having the electron donor surface and the non-electron donor surface is performed, and the deposition film is deposited by a non-selective deposition method.

摘要翻译： 本发明提供了一种形成用作高质量布线层的沉积膜的方法，其对诸如非单晶材料的任何材料具有良好的应力迁移耐久性。 基板位于沉积膜形成空间中，烷基铝卤化物的气体被供应到沉积膜形成空间，并且在阴极氧化铝的分压为7×10 -3的电子供体表面上选择性地形成铝膜 在分解温度以上的卤化烷基铝和450℃以下的范围内乇至9×10 -2乇。 当对非单晶材料进行沉积时，执行用氢原子终止具有电子给体表面和非电子给体表面的基底的非电子给体表面的化学处理，并且沉积膜是 通过非选择性沉积方法沉积。

公开(公告)号：US5404046A

公开(公告)日：1995-04-04

申请号：US261232

申请日：1994-06-14

申请人： Shigeyuki Matsumoto ,  Osamu Ikeda

发明人： Shigeyuki Matsumoto ,  Osamu Ikeda

IPC分类号： H01L23/485 ,  H01L23/522 ,  H01L23/48

CPC分类号： H01L23/485 ,  H01L23/5226 ,  H01L2924/0002

摘要： The semiconductor circuit device is provided with a first wiring layer connected to a semiconductor substrate through a contact hole in an insulation film formed on a main surface of the semiconductor substrate, and a second wiring layer connected with the first wiring layer through a through-hole in an interlayer insulation film formed on the first wiring layer, wherein the first wiring is substantially flat on the contact hole and the area of the through-hole is smaller than that of the contact hole.

摘要翻译： 半导体电路器件设置有通过形成在半导体衬底的主表面上的绝缘膜中的接触孔连接到半导体衬底的第一布线层和通过通孔连接到第一布线层的第二布线层 在形成在第一布线层上的层间绝缘膜中，其中第一布线在接触孔上基本平坦，并且通孔的面积小于接触孔的面积。

公开(公告)号：US06258174B1

公开(公告)日：2001-07-10

申请号：US08378932

申请日：1995-01-26

申请人： Shigeyuki Matsumoto ,  Osamu Ikeda

发明人： Shigeyuki Matsumoto ,  Osamu Ikeda

IPC分类号： C23C1600

CPC分类号： H01L21/28562 ,  H01L21/32051 ,  H01L21/76879

摘要： A process for forming a metal film comprises the steps of arranging a substrate in a space for formation of the film, introducing an alkylaluminum hydride gas and hydrogen gas into the space and heating directly the substrate to form a metal film comprising aluminum as main component on the surface of the substrate.

摘要翻译： 一种用于形成金属膜的方法包括以下步骤：将基板布置在用于形成膜的空间中，将烷基铝氢化物气体和氢气引入到空间中并直接加热基板以形成包含铝作为主要成分的金属膜 衬底的表面。

公开(公告)号：US5614439A

公开(公告)日：1997-03-25

申请号：US393928

申请日：1995-02-21

申请人： Fumio Murooka ,  Tetsuo Asaba ,  Shigeyuki Matsumoto ,  Osamu Ikeda ,  Toshihiko Ichise ,  Yukihiko Sakashita ,  Shunsuke Inoue

发明人： Fumio Murooka ,  Tetsuo Asaba ,  Shigeyuki Matsumoto ,  Osamu Ikeda ,  Toshihiko Ichise ,  Yukihiko Sakashita ,  Shunsuke Inoue

IPC分类号： H01L21/00 ,  H01L21/285 ,  H01L21/677 ,  H01L21/768 ,  H01L23/522 ,  H01L21/44

CPC分类号： H01L21/67167 ,  H01L21/28556 ,  H01L21/67173 ,  H01L21/67207 ,  H01L21/67745 ,  H01L21/76879 ,  H01L23/5226 ,  H01L2924/0002 ,  Y10S148/05

摘要： A semiconductor device with a high-density wiring structure, and a producing method for such device are provided. The semiconductor device has a substrate such as silicon, an insulation layer laminated on the substrate and having a groove or a hole, and a wiring of a conductive material formed in the groove or hole in the insulation layer. The wiring is formed by depositing a conductive material such as aluminum or an aluminum alloy in the groove or hole of the insulation layer by a CVD method utilizing alkylaluminum hydride gas and hydrogen. The groove or hole can be formed by an ordinary patterning method combined with etching.

摘要翻译： 提供具有高密度布线结构的半导体器件及其制造方法。 半导体器件具有诸如硅的衬底，层叠在衬底上的具有凹槽或孔的绝缘层以及形成在绝缘层中的凹槽或孔中的导电材料的布线。 通过使用烷基氢化铝气体和氢气的CVD方法在绝缘层的凹槽或孔中沉积导电材料如铝或铝合金而形成布线。 凹槽或孔可以通过与蚀刻结合的普通图案化方法形成。