公开(公告)号：US06025243A

公开(公告)日：2000-02-15

申请号：US257294

申请日：1994-06-09

申请人： Kazuaki Ohmi ,  Osamu Ikeda ,  Shigeyuki Matsumoto

发明人： Kazuaki Ohmi ,  Osamu Ikeda ,  Shigeyuki Matsumoto

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L23/54

CPC分类号： H01L21/76843 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76879 ,  H01L2924/0002 ,  Y10S148/107

摘要： A deposited film formation method comprises the steps of:(a) feeding a gas of an organometallic compound containing molybdenum atom and hydrogen gas onto a substrate having an electron donative surface; and(b) maintaining the temperature of the electron donative surface within the range of the decomposition temperature of the organometallic compound or lower and 800.degree. C. or lower to form a molybdenum film on the electron donative surface.

摘要翻译： 沉积膜形成方法包括以下步骤：（a）将含有钼原子和氢气的有机金属化合物的气体供给到具有给电子表面的基板上; 和（b）将供电表面的温度保持在有机金属化合物的分解温度范围内或更低至800℃或更低，以在电子给体表面上形成钼膜。

公开(公告)号：US5154949A

公开(公告)日：1992-10-13

申请号：US841307

申请日：1992-02-28

申请人： Hitoshi Shindo ,  Takeshi Ichikawa ,  Osamu Ikeda ,  Kazuaki Ohmi ,  Shigeyuki Matsumoto

发明人： Hitoshi Shindo ,  Takeshi Ichikawa ,  Osamu Ikeda ,  Kazuaki Ohmi ,  Shigeyuki Matsumoto

IPC分类号： H01L21/285 ,  H01L21/768

CPC分类号： H01L21/28562 ,  H01L21/76879

摘要： A process for forming an additive-containing Al film of good quality according to the CVD method utilizing an alkyl aluminum hydride, a gas containing an additive and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of additive-containing Al.

摘要翻译： 根据使用氢化烷基铝，含有添加剂和氢的气体的CVD法形成具有良好质量的含添加剂的Al膜的方法，其是优异的沉积膜形成工艺，其还能够选择性沉积含添加剂的Al 。

公开(公告)号：US5134092A

公开(公告)日：1992-07-28

申请号：US587844

申请日：1990-09-25

申请人： Shigeyuki Matsumoto ,  Osamu Ikeda ,  Kazuaki Ohmi

发明人： Shigeyuki Matsumoto ,  Osamu Ikeda ,  Kazuaki Ohmi

IPC分类号： H01L21/285 ,  H01L21/768

CPC分类号： H01L21/28562 ,  H01L21/76879

摘要： A process for forming a deposited film comprises the steps of;(a) disposing in a space for forming a deposited film a substrate having an electron donative surface;(b) introducing to the space for forming a deposited film i) a gas comprising an organic metal compound containing a tungsten atom and ii) a hydrogen gas; and(c) forming a tungsten film on the electron donative surface.

公开(公告)号：US07077901B2

公开(公告)日：2006-07-18

申请号：US10402214

申请日：2003-03-31

申请人： Katsumi Nakagawa ,  Takao Yonehara ,  Kazuaki Ohmi ,  Shoji Nishida

发明人： Katsumi Nakagawa ,  Takao Yonehara ,  Kazuaki Ohmi ,  Shoji Nishida

IPC分类号： C30B19/02

CPC分类号： C30B19/12 ,  C30B19/02 ,  C30B29/06

摘要： A process for producing a single crystal silicon wafer, comprising the steps of forming a porous layer on a single crystal silicon substrate comprising a silicon whose concentration of mass number 28 silicon isotope is less than 92.5% on an average; dissolving a starting silicon whose concentration of mass number 28 silicone isotope whose mass number is more than 98% on an average in a melt for liquid-phase epitaxy until said starting silicon becomes to be a supersaturated state in said melt under reductive atmosphere maintained at high temperature: immersing said single crystal silicon substrate in said melt to grow a single crystal silicon layer on the surface of said porous layer of said single crystal silicon substrate; and peeling said single crystal silicon layer from a portion of said porous layer.

摘要翻译： 一种制造单晶硅晶片的方法，包括以下步骤：在单晶硅衬底上形成多孔层，该单晶硅衬底包含平均浓度为28％硅同位素的硅的浓度小于92.5％的硅; 将其质量数为28的硅同位素的质量数大于98％的起始硅溶解在用于液相外延的熔体中，直到所述起始硅在所述熔体中在还原气氛保持在高温下变为过饱和状态为止 温度：将所述单晶硅衬底浸入所述熔体中以在所述单晶硅衬底的所述多孔层的表面上生长单晶硅层; 以及从所述多孔层的一部分剥离所述单晶硅层。

公开(公告)号：US06609446B1

公开(公告)日：2003-08-26

申请号：US09495847

申请日：2000-02-01

申请人： Kazuaki Ohmi ,  Takao Yonehara ,  Kiyofumi Sakaguchi ,  Kazutaka Yanagita ,  Hirokazu Kurisu

发明人： Kazuaki Ohmi ,  Takao Yonehara ,  Kiyofumi Sakaguchi ,  Kazutaka Yanagita ,  Hirokazu Kurisu

IPC分类号： B23B2710

CPC分类号： H01L21/67092 ,  H01L21/76259 ,  Y10T82/16 ,  Y10T82/16016 ,  Y10T82/16065

摘要： When a bonded substrate stack prepared by bonding a first substrate in which a single-crystal Si layer is formed on a porous layer, and an insulating layer is formed on the single-crystal Si layer to a second substrate is to be separated at the porous layer, serrate defects at the peripheral portion of the separated substrates are prevented. A fluid is ejected from an ejection nozzle (112) and injected into the porous layer of a bonded substrate stack (30) while rotating the bonded substrate stack (30) about an axis (C) in a direction (R), thereby separating the bonded substrate stack (30) into two substrates at the porous layer. When the peripheral portion of the bonded substrate stack (30) is to be separated, the ejection nozzle (112) is located within a range (B).

摘要翻译： 当在多晶层上形成单晶Si层的第一衬底与第二衬底之间形成绝缘层而制备的键合衬底叠层在多孔 可以防止分离的基板的周边部分的层，锯齿状缺陷。 从喷嘴（112）喷射流体并将其注入到键合衬底叠层（30）的多孔层中，同时使键合衬底叠层（30）绕轴线（C）沿方向（R）旋转，从而将 键合衬底叠层（30）在多孔层上形成两个衬底。 当键合衬底叠层（30）的周边部分被分离时，喷嘴（112）位于范围（B）内。

公开(公告)号：US06391743B1

公开(公告)日：2002-05-21

申请号：US09401775

申请日：1999-09-22

申请人： Masaaki Iwane ,  Takao Yonehara ,  Kazuaki Ohmi ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Kazutaka Yanagita

发明人： Masaaki Iwane ,  Takao Yonehara ,  Kazuaki Ohmi ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Kazutaka Yanagita

IPC分类号： H01L2130

CPC分类号： H01L31/072 ,  H01L21/67092 ,  H01L21/76254 ,  H01L2221/68363 ,  Y02E10/50

摘要： There is disclosed a method of producing a photoelectric conversion device comprising the steps of forming a semiconductor substrate comprising a first and a second semiconductor layers with a separation layer therebetween; bonding a support substrate to a surface of the second semiconductor layer opposite to the separation-layer-side surface to form a bonded substrate; separating the first and the second semiconductor layers by the separation layer; and producing a photoelectric conversion device in the second semiconductor layer, wherein when bonding the semiconductor substrate and the support substrate to each other, at least a portion is formed in the bonded substrate in which at least a part of end portions of the semiconductor substrate and the support substrate is not bonded to the other substrate and a fluid is jetted against a side surface of the bonded substrate, thereby separating the first and the second semiconductor layers. The method makes it possible to separate a bonded substrate with a high yield, thereby supplying photoelectric conversion devices with a high quality at a low production cost.

摘要翻译： 公开了一种制造光电转换装置的方法，包括以下步骤：形成包括第一和第二半导体层的半导体衬底，其间具有分离层; 将支撑基板接合到与分离层侧表面相对的第二半导体层的表面，以形成键合衬底; 通过分离层分离第一和第二半导体层; 以及在所述第二半导体层中制造光电转换器件，其中当将所述半导体衬底和所述支撑衬底彼此接合时，至少一部分形成在所述键合衬底中，其中所述半导体衬底和所述支撑衬底的至少一部分端部和 支撑基板不与另一个基板接合，并且流体相对于键合衬底的侧表面喷射，从而分离第一和第二半导体层。 该方法可以以高产率分离粘合的基片，从而以低的生产成本提供高质量的光电转换装置。

公开(公告)号：US6127692A

公开(公告)日：2000-10-03

申请号：US141723

申请日：1993-10-26

申请人： Shigetoshi Sugawa ,  Ihachiro Gofuku ,  Kazuaki Ohmi ,  Yoshiyuki Osada ,  Masato Yamanobe

发明人： Shigetoshi Sugawa ,  Ihachiro Gofuku ,  Kazuaki Ohmi ,  Yoshiyuki Osada ,  Masato Yamanobe

IPC分类号： H01L27/146 ,  H01L29/06 ,  H01L31/075 ,  H01L31/105 ,  H01L31/107 ,  H01L39/00

CPC分类号： H01L31/1075 ,  H01L27/14609 ,  H01L27/14681 ,  H01L31/035245

摘要： A photoelectric conversion apparatus of this invention has a high sensitivity and low noise, and can be formed to have a large area at a relatively low temperature since it has a light absorption layer (310), formed of a non-monocrystalline material, for absorbing light and generating photocarriers, and a multiplication layer (301, 303, 305, 307, 309) for multiplying the photocarriers generated by the light absorption layer.

摘要翻译： 本发明的光电转换装置具有高灵敏度和低噪声，并且可以形成为在相对低的温度下具有大的面积，因为它具有由非单晶材料形成的吸光层（310），用于吸收 光和产生光载流子，以及用于乘以由光吸收层产生的光载流子的乘法层（301,303,305,307,309）。

公开(公告)号：US06979629B2

公开(公告)日：2005-12-27

申请号：US10678146

申请日：2003-10-06

申请人： Kazutaka Yanagita ,  Kazuaki Ohmi ,  Kiyofumi Sakaguchi ,  Hirokazu Kurisu

发明人： Kazutaka Yanagita ,  Kazuaki Ohmi ,  Kiyofumi Sakaguchi ,  Hirokazu Kurisu

IPC分类号： H01L21/306 ,  H01L21/00 ,  H01L21/02 ,  H01L21/336 ,  H01L21/762 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L21/67092 ,  H01L21/76259 ,  Y10S438/977

摘要： A detection apparatus for detecting a feature portion of a composite member having a structure in which a first member having a separation layer inside is brought into tight contact with a second member. The composite member has, as the feature portion, a portion at which a peripheral edge of the first member projects outside a peripheral edge of the second member. The apparatus includes a shift detection section which detects a shift between the peripheral edge of the first member and the peripheral edge of the second member along an outer periphery of the composite member and a determination section which determines the feature portion on the basis of a detection result by the shift detection section.

摘要翻译： 一种用于检测复合构件的特征部分的检测装置，其具有其中具有内部具有分离层的第一构件与第二构件紧密接触的结构。 复合构件具有作为特征部分的第一构件的周缘突出到第二构件的周边边缘的部分。 该装置包括：移动检测部，其沿着复合部件的外周检测第一部件的周缘与第二部件的周缘之间的移动;判定部，其基于检测来决定特征部 由移位检测部分产生。

公开(公告)号：US06746559B2

公开(公告)日：2004-06-08

申请号：US10202022

申请日：2002-07-25

申请人： Kazuaki Ohmi ,  Takao Yonehara ,  Kiyofumi Sakaguchi ,  Kazutaka Yanagita

发明人： Kazuaki Ohmi ,  Takao Yonehara ,  Kiyofumi Sakaguchi ,  Kazutaka Yanagita

IPC分类号： B32B3500

CPC分类号： H01L21/67092 ,  H01L21/6838 ,  Y10T29/49821 ,  Y10T83/364 ,  Y10T156/1137 ,  Y10T156/1374 ,  Y10T156/1922 ,  Y10T156/1933 ,  Y10T156/1939

摘要： To separate a composite member consisting of a plurality of bonded members without destructing or damaging it, a fluid is jetted against the composite member from a nozzle to separate it into a plurality of members at a position different from a bonding position.

公开(公告)号：US06656271B2

公开(公告)日：2003-12-02

申请号：US09453539

申请日：1999-12-03

申请人： Takao Yonehara ,  Kunio Watanabe ,  Tetsuya Shimada ,  Kazuaki Ohmi ,  Kiyofumi Sakaguchi

发明人： Takao Yonehara ,  Kunio Watanabe ,  Tetsuya Shimada ,  Kazuaki Ohmi ,  Kiyofumi Sakaguchi

IPC分类号： C30B2518

CPC分类号： H01L21/76251 ,  H01L21/76259 ,  Y10S117/913

摘要： A process for manufacturing a semiconductor wafer which has superior suitability for mass production and reproducibility. The process comprises the steps of preparing a first member which has a monocrystalline semiconductor layer on a semiconductor substrate with a separation layer arranged therebetween with a semiconductor wafer as the raw material, transferring the monocrystalline semiconductor layer onto a second member which comprises a semiconductor wafer after separating the monocrystalline semiconductor layer through the separation layer, and smoothing the surface of the semiconductor substrate after the transferring step so as to be used as a semiconductor wafer for purposes other than forming the first and second members.

摘要翻译： 一种半导体晶片的制造方法，其具有优异的批量生产和再现性的适用性。 该方法包括以下步骤：在半导体衬底上制备具有单晶半导体层的第一构件，其间分隔层以半导体晶片为原料，将单晶半导体层转移到第二构件上，该第二构件包括半导体晶片 通过分离层分离单晶半导体层，并且在转印步骤之后使半导体衬底的表面平滑，以便用作除了形成第一和第二构件之外的目的的半导体晶片。