Method of crystallizing semiconductor film
    2.
    发明授权
    Method of crystallizing semiconductor film 有权
    半导体膜结晶方法

    公开(公告)号:US07727913B2

    公开(公告)日:2010-06-01

    申请号:US12202651

    申请日:2008-09-02

    IPC分类号: H01L21/00

    摘要: A method of crystallizing a semiconductor film including splitting a pulse laser beam oscillated from a laser oscillator, and synthesizing the split pulse laser beams after the split pulse laser beams have propagated through optical paths different in optical path length, modulating the synthesized pulse laser beam into a pulse laser beam by a phase modulating element, and irradiating a non-single-crystal film formed on a substrate with the laser beam to crystallize the non-single-crystal film. Splitting the pulse laser beam and synthesizing the split pulse laser beams are performed using at least three optical splitting/synthesizing units arranged in order, and include sequentially splitting one pulse laser beam split by one optical splitting/synthesizing unit by succeeding splitting/synthesizing unit, and synthesizing the other pulse laser beam split by one optical splitting/synthesizing unit with the other pulse laser beam split by preceding splitting/synthesizing unit.

    摘要翻译: 一种结晶半导体膜的方法,包括分离从激光振荡器振荡的脉冲激光束,并且在分离脉冲激光束已经通过光路长度不同的光路传播之后合成分割脉冲激光束,将合成脉冲激光束调制成 通过相位调制元件的脉冲激光束,用激光束照射形成在基板上的非单晶膜,使非单晶膜结晶化。 使用至少三个顺序排列的光分裂/合成单元执行脉冲激光束的分离和合成分割脉冲激光束,并且包括通过后续的分割/合成单元顺序地分割由一个光分解/合成单元分割的一个脉冲激光束, 并且将由一个光分解/合成单元分离的另一个脉冲激光束与由前面的分割/合成单元分离的另一个脉冲激光束合成。

    Method and photo mask for manufacturing an array substrate
    3.
    发明授权
    Method and photo mask for manufacturing an array substrate 有权
    用于制造阵列基板的方法和光罩

    公开(公告)号:US06667198B2

    公开(公告)日:2003-12-23

    申请号:US10205317

    申请日:2002-07-26

    IPC分类号: H01L2100

    摘要: A method of manufacturing an array substrate comprising; depositing an amorphous material on a transparent substrate; and changing the amorphous material to a polycrystalline material by irradiation of energy beams through a photo mask, the mask including a transparent region permitting the energy beams to pass through and a shutoff region surrounding the transparent region and interrupting the energy beams, wherein changing the amorphous material to the polycrystalline material includes: moving the transparent substrate by a constant distance perpendicularly to the lengthwise direction of a flat pattern projected onto the surface of the amorphous material when energy beams passing through the transparent region are irradiated onto the amorphous material; and irradiating the energy beams onto the amorphous material every time when the transparent substrate is moved.

    摘要翻译: 一种阵列基板的制造方法, 在透明基板上沉积无定形材料; 以及通过照射能量束通过光掩模将所述无定形材料改变为多晶材料,所述掩模包括允许所述能量束通过的透明区域和围绕所述透明区域的截止区域并中断所述能量束,其中, 多晶材料的材料包括:当通过透明区域的能量束照射到非晶材料上时,使透明基板移动垂直于投射到非晶材料表面上的平坦图案的长度方向上恒定的距离; 并且每当透明基板移动时,将能量束照射到非晶材料上。