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    MAYENITE-TYPE COMPOUND AND PROCESS FOR PRODUCTION OF SAME
    2.
    发明申请
    MAYENITE-TYPE COMPOUND AND PROCESS FOR PRODUCTION OF SAME 有权
    多晶型化合物及其制造方法

    公开(公告)号：US20110155970A1

    公开(公告)日：2011-06-30

    申请号：US13034765

    申请日：2011-02-25

    申请人： Kazuhiro ITO ,  Satoru Watanabe ,  Naomichi Miyakawa ,  Setsuro Ito

    发明人： Kazuhiro ITO ,  Satoru Watanabe ,  Naomichi Miyakawa ,  Setsuro Ito

    IPC分类号： H01B1/02

    CPC分类号： C01F7/164 ,  C01F7/16 ,  C01F7/162 ,  C01F7/166 ,  C01P2002/50 ,  C01P2002/86 ,  C01P2006/40 ,  C01P2006/60 ,  H01J11/40

    摘要： The present invention relates to a mayenite-type compound in which a part of Ca of a mayenite-type compound containing Ca, Al and oxygen is substituted by at least one kind of an atom M selected from the group consisting of Be, Mg and Sr, in which the mayenite-type compound has an atom number ratio represented by M/(Ca+M) of from 0.01 to 0.50, and at least a part of free oxygen ions in a mayenite-type crystal structure are substituted by anions of an atom having electron affinity smaller than that of an oxygen atom.

    摘要翻译： 本发明涉及一种钙铝型化合物，其中含有Ca，Al和氧的钙铝石型化合物的Ca的一部分Ca被选自Be，Mg和Sr中的至少一种原子M所取代 ，其中钙铝石型化合物具有由M /（Ca + M）表示的原子数比为0.01至0.50，并且钙铝石型晶体结构中的至少一部分游离氧离子被阴离子所取代 具有小于氧原子的电子亲和力的原子。

    METHOD FOR PREPARING MAYENITE-CONTAINING OXIDE AND METHOD FOR PREPARING ELECTROCONDUCTIVE MAYENITE-CONTAINING OXIDE
    4.
    发明申请
    METHOD FOR PREPARING MAYENITE-CONTAINING OXIDE AND METHOD FOR PREPARING ELECTROCONDUCTIVE MAYENITE-CONTAINING OXIDE 有权
    用于制备含氧化钼的氧化物的方法和用于制备含有电子的含有氧化钇的氧化物的方法

    公开(公告)号：US20110278509A1

    公开(公告)日：2011-11-17

    申请号：US13192568

    申请日：2011-07-28

    申请人： Kazuhiro ITO ,  Satoru Watanabe ,  Naomichi Miyakawa ,  Setsuro Ito ,  Kazunari Watanabe

    发明人： Kazuhiro ITO ,  Satoru Watanabe ,  Naomichi Miyakawa ,  Setsuro Ito ,  Kazunari Watanabe

    IPC分类号： H01B1/08

    CPC分类号： C01F7/164 ,  C01P2006/40

    摘要： To provide a method for preparing a mayenite-containing oxide containing a mayenite type compound and having a hydride ion density of at least 1×1018/cm3 without need for expensive facilities, control of complicated reaction conditions or a long period of reaction time. A method for preparing a mayenite-containing oxide, which comprises a firing step of heating a starting material having a molar ratio of CaO:Al2O3 being from 9:10 to 14:5 based on the oxides at a temperature of from 900 to 1,300° C. to obtain a fired powder and a hydrogenation step of firing the fired powder at a temperature of at least 1,210° C. and lower than 1,350° C. in a hydrogen-containing gas having an oxygen partial pressure of at most 1,000 Pa to obtain a mayenite-containing oxide containing a mayenite type compound and having a hydride ion density of at least 1×1018/cm3, and a method for preparing an electroconductive mayenite-containing oxide, which comprises irradiating the obtained mayenite-containing oxide with an ultraviolet ray etc. to obtain a mayenite-containing oxide containing an electroconductive mayenite type compound.

    摘要翻译： 为了提供一种制备含有钙铝石型化合物并且氢化物离子密度为至少1×1018 / cm3而不需要昂贵的设备，控制复杂的反应条件或长时间的反应时间的钙铝氧化物的方法。 一种含有钙铝石的氧化物的制造方法，其特征在于，在900〜1300℃的温度下，对CaO：Al 2 O 3的摩尔比为9:10〜14:5的原料进行加热， 以获得烧制粉末和氢化步骤，在氧分压至多为1000Pa的含氢气体中，在至少1,210℃且低于1350℃的温度下焙烧烧制粉末至 得到含有钙铝石型化合物，含氢离子密度为1×1018 / cm3以上的含钙锰矿的氧化物，以及制造含导电性钙铝的氧化物的方法，其包括用紫外线照射所得到的含有钙铝的氧化物 以获得含有导电钙铝石型化合物的含有钙铝的氧化物。

    PROCESS FOR PRODUCING AN OXIDE
    7.
    发明申请
    PROCESS FOR PRODUCING AN OXIDE 有权
    生产氧化物的方法

    公开(公告)号：US20110182803A1

    公开(公告)日：2011-07-28

    申请号：US13080769

    申请日：2011-04-06

    申请人： Kazuhiro ITO ,  Satoru Watanabe ,  Kazunari Watanabe ,  Setsuro Ito

    发明人： Kazuhiro ITO ,  Satoru Watanabe ,  Kazunari Watanabe ,  Setsuro Ito

    IPC分类号： C01F7/16

    CPC分类号： C01F7/164 ,  C01P2004/61 ,  C01P2006/40

    摘要： The present invention relates to a method for producing an oxide containing a conductive mayenite type compound and having an electron concentration of 1×1018/cm3 or more, from a raw material which is a combination of a calcium compound and an aluminum compound or is a compound containing calcium and aluminum, each having a molar ratio of calcium oxide and aluminum oxide ranging from 9:10 to 14:5 in terms of the oxides, the method including the steps of: heating and holding the raw material at 900 to 1,300° C. to produce a calcined powder containing at least one oxide selected from the group consisting of a calcium aluminate, calcium oxide and aluminum oxide; and heating and holding the calcined powder at 1,200° C. to less than 1,415° C. under a reduction atmosphere in an inert gas atmosphere or a vacuum atmosphere each having an oxygen partial pressure of 1,000 Pa or less.

    摘要翻译： 本发明涉及由钙化合物和铝化合物的组合的原料生成含有导电性钙铝石型化合物的氧化物的电子浓度为1×1018 / cm3以上的氧化物的方法， 包含钙和铝的化合物，其氧化物和氧化铝的摩尔比为9:10至14:5，氧化物的方法包括以下步骤：将原料加热至900至1300℃ 以制备含有选自铝酸钙，氧化钙和氧化铝中的至少一种氧化物的煅烧粉末; 在惰性气体气氛或氧气分压为1000Pa以下的真空气氛中，在还原气氛下，将煅烧后的粉末在1,200℃加热保持至小于1415℃。

    Dielectric Waveguide Filter
    8.
    发明申请
    Dielectric Waveguide Filter 有权
    介质波导滤波器

    公开(公告)号：US20120229233A1

    公开(公告)日：2012-09-13

    申请号：US13418040

    申请日：2012-03-12

    申请人： Kazuhiro ITO

    发明人： Kazuhiro ITO

    IPC分类号： H01P1/20 ,  H01P3/16

    CPC分类号： H01P1/2084 ,  H01P1/2002 ,  H01P1/2088 ,  H01P7/10

    摘要： [OBJECT]It is an object to provide a dielectric waveguide filter with attenuation poles, which is capable of suppressing deterioration in a high band-side attenuation characteristic with respect to a low band-side attenuation characteristic.[SOLUTION]A dielectric waveguide filter comprises a plurality of dielectric waveguide resonators each having a rectangular parallelepiped-shaped dielectric block, periphery of which is covered by a conductor film. The dielectric waveguide resonators are configured to form a main coupling path, and a sub coupling path bypassing a part of the main coupling path. The part of the main coupling path bypassed by the sub coupling path includes at least one capacitive coupling path.

    摘要翻译： 本发明的目的是提供一种具有衰减极的介质波导滤波器，其能够抑制相对于低频带侧衰减特性的高频带侧衰减特性的劣化。 [解决方案]电介质波导滤波器包括多个介质波导谐振器，每个介质波导谐振器都具有一个长方体形状的介电块，其周边由导体膜覆盖。 电介质波导谐振器被配置为形成主耦合路径和旁路主耦合路径的一部分的子耦合路径。 由副耦合路径旁路的主耦合路径的部分包括至少一个电容耦合路径。