公开(公告)号：US06490187B2

公开(公告)日：2002-12-03

申请号：US09946596

申请日：2001-09-06

申请人： Kazuhisa Mori ,  Asako Koyanagi ,  Satoshi Fukuda ,  Toshisuke Mine ,  Takao Kishikawa ,  Tomoharu Sakoda

发明人： Kazuhisa Mori ,  Asako Koyanagi ,  Satoshi Fukuda ,  Toshisuke Mine ,  Takao Kishikawa ,  Tomoharu Sakoda

IPC分类号： H02M100

CPC分类号： H02M7/003 ,  H02M5/4585

摘要： A semiconductor electric power conversion device includes a converter unit and an inverter unit, each having a group of parallel capacitors and multiple switching elements. Subdivided positive conductive connections associated with the converter unit and divided positive conductive connections associated with the inverter unit are formed at a positive side conductor connected to capacitors; while divided negative conductive connections associated with the converter unit and divided negative-polarity conductive connections associated with the inverter unit are formed at a negative polarity side conductor, connected to capacitors. The positive and negative polarity conductors have a multilayer structure with a dielectric plate interposed therebetween. Converter positive and negative polarity conductors are formed into a multilayer structure with the dielectric plate sandwiched between them, and inverter positive and negative polarity conductors are formed into a multilayer structure with the dielectric plate sandwiched therebetween.

摘要翻译： 半导体电力转换装置包括转换器单元和逆变器单元，每个具有一组并联电容器和多个开关元件。 与转换器单元相关联的分开的正导电连接和与逆变器单元相关联的分开的正导通连接形成在连接到电容器的正侧导体上; 而与转换器单元相关联的分开的负导电连接和与逆变器单元相关联的分开的负极性导电连接形成在连接到电容器的负极侧导体。 正极和负极导体具有介于其间的电介质板的多层结构。 转换器正极性和负极性导体形成为夹在它们之间的电介质层的多层结构，并且逆变器正极性和负极性导体形成为夹在介质板之间的多层结构。

公开(公告)号：US06795324B2

公开(公告)日：2004-09-21

申请号：US10099954

申请日：2002-03-19

申请人： Kazuhisa Mori ,  Takashi Ikimi ,  Satoshi Fukuda ,  Takao Kishikawa ,  Tomoharu Sakoda

发明人： Kazuhisa Mori ,  Takashi Ikimi ,  Satoshi Fukuda ,  Takao Kishikawa ,  Tomoharu Sakoda

IPC分类号： H02M100

CPC分类号： H02M7/003

摘要： A power converter is disclosed, in which the sum of the length of that portion of a control signal line which is in opposite relation to an area of a main circuit wiring where a main circuit current flows and a plurality of tabular conductors are in superposed relation with each other, the length of that portion of the control signal line which is in opposite relation to an area of the main circuit wiring where the main circuit current does not flow and the length of that portion of the control signal line which is located outside an end of the main circuit wiring, is substantially equal to the total wiring length of the signal control line.

摘要翻译： 公开了一种功率转换器，其中与主电路电流流动的主电路布线的面积和多个平板导体相反的控制信号线的该部分的长度之和为叠加关系 彼此之间的控制信号线的与主电路电流不流动的主电路布线的面积相反的部分的长度以及位于外部的控制信号线的那部分的长度 主电路布线的端部基本上等于信号控制线的总布线长度。

公开(公告)号：US20060256494A1

公开(公告)日：2006-11-16

申请号：US11413007

申请日：2006-04-28

申请人： Kazuhisa Mori

发明人： Kazuhisa Mori

IPC分类号： H02H5/04

CPC分类号： H01L27/0248

摘要： An overheat detecting circuit according to an embodiment of the invention includes: a current source for generating a constant current; an overheat detecting element unit that operates with a first current generated in accordance with the constant current and generates a first voltage based on a semiconductor substrate temperature; and a detecting circuit unit that operates a second current generated in accordance with the constant current, and generates a second voltage corresponding to a predetermined semiconductor substrate temperature to detect overheating based on a voltage difference between the first voltage and a reference voltage and a voltage difference between the second voltage and the reference voltage.

摘要翻译： 根据本发明实施例的过热检测电路包括：用于产生恒定电流的电流源; 过热检测元件单元，其以根据所述恒定电流生成的第一电流进行工作，并且基于半导体衬底温度产生第一电压; 以及检测电路单元，其操作根据恒定电流产生的第二电流，并且产生对应于预定半导体衬底温度的第二电压，以基于第一电压和参考电压之间的电压差和电压差来检测过热 在第二电压和参考电压之间。

公开(公告)号：US07104363B2

公开(公告)日：2006-09-12

申请号：US09970816

申请日：2001-10-05

申请人： Kazuhisa Mori ,  Kouki Yamamoto ,  Hideki Ayano ,  Ikuo Yamato ,  Hiromi Inaba ,  Hirokazu Nagura ,  Hideki Nihei

发明人： Kazuhisa Mori ,  Kouki Yamamoto ,  Hideki Ayano ,  Ikuo Yamato ,  Hiromi Inaba ,  Hirokazu Nagura ,  Hideki Nihei

IPC分类号： B66B1/06

CPC分类号： B66B11/0055 ,  B66B1/30 ,  B66B17/12

摘要： An elevator having a power feeding apparatus effective for reducing the installation space for the elevator is disclosed.The dimension of the power transmission part disposed at the hoist way and the dimension of the power receiving part mounted on the counter weight, each measured in the direction along which the counter weight moves are made different from each other.

摘要翻译： 公开了一种具有有效减少电梯安装空间的供电设备的电梯。 设置在起重方向的动力传递部分的尺寸和安装在配重上的受力部分的尺寸各自在平衡重移动时沿测量方向彼此不同。

公开(公告)号：US06891214B2

公开(公告)日：2005-05-10

申请号：US10096454

申请日：2002-03-13

申请人： Kazuhisa Mori ,  Takashi Ikimi ,  Shuji Katoh ,  Yutaka Sato

发明人： Kazuhisa Mori ,  Takashi Ikimi ,  Shuji Katoh ,  Yutaka Sato

IPC分类号： H02M1/00 ,  H01L27/15

CPC分类号： H02M1/00

摘要： A semiconductor power module capable of efficiently utilizing the performance of the module and facilitating management of the module in custody. The semiconductor power module having one or more semiconductor power switching elements and a drive unit is provided with a non-volatile memory for storing use history of the module and a drive unit. The use history contains information of one of the number of switching times of the semiconductor power switching element, the number of over-current detections of the semiconductor power switching element and a temperature rise of the semiconductor power module.

摘要翻译： 一种半导体功率模块，能够有效地利用模块的性能并便于管理模块。 具有一个或多个半导体功率开关元件和驱动单元的半导体功率模块设置有用于存储模块的使用历史和驱动单元的非易失性存储器。 使用历史包含半导体功率开关元件的开关次数，半导体功率开关元件的过电流检测次数和半导体功率模块的温度上升之一的信息。

公开(公告)号：US5757257A

公开(公告)日：1998-05-26

申请号：US309415

申请日：1994-09-20

申请人： Toshiya Doi ,  Takesi Ozawa ,  Katsuzo Aihara ,  Tomoichi Kamo ,  Kazuhisa Mori ,  Nobuhiro Hara

发明人： Toshiya Doi ,  Takesi Ozawa ,  Katsuzo Aihara ,  Tomoichi Kamo ,  Kazuhisa Mori ,  Nobuhiro Hara

IPC分类号： H01F6/00 ,  H01L39/20 ,  H01F1/00

CPC分类号： H01F6/008 ,  H01L39/20

摘要： Superconducting magnet system using a liquid helium for its operation and a permanent current switch and a system thereof applied to the superconducting magnet system employing a permanent current loop created by a superconducting material developing superconductivity when cooled. The system includes a superconducting magnet dipped in the liquid helium, the permanent current switch for driving or interrupting the superconducting magnet, and a cryostat for accommodating the superconducting magnet and the permanent current switch, and the permanent current switch is arranged over a liquid surface of the liquid helium.

摘要翻译： 使用液氦作为其操作的超导磁体系统和永久电流开关及其系统应用于超导磁体系统，该超导磁体采用由冷却时产生超导材料的超导材料产生的永久电流回路。 该系统包括浸在液氦中的超导磁体，用于驱动或中断超导磁体的永久电流开关，以及用于容纳超导磁体和永久电流开关的低温恒温器，并且永磁电流开关设置在 液氦。

公开(公告)号：US06839213B2

公开(公告)日：2005-01-04

申请号：US10213377

申请日：2002-08-07

申请人： Kazuhisa Mori ,  Takashi Ikimi ,  Shuji Katoh ,  Yutaka Sato

发明人： Kazuhisa Mori ,  Takashi Ikimi ,  Shuji Katoh ,  Yutaka Sato

IPC分类号： H02M1/00 ,  H02H5/04

CPC分类号： H02M1/00

摘要： A semiconductor power module capable of efficiently utilizing the performance of the module and facilitating management of the module in custody. The semiconductor power module having one or more semiconductor power switching elements and a drive unit is provided with a non-volatile memory for storing use history of the module and a drive unit. The use history contains information of one of the number of switching times of the semiconductor power switching element, the number of over-current detections of the semiconductor power switching element and a temperature rise of the semiconductor power module.

摘要翻译： 一种半导体功率模块，能够有效地利用模块的性能并便于管理模块。 具有一个或多个半导体功率开关元件和驱动单元的半导体功率模块设置有用于存储模块的使用历史和驱动单元的非易失性存储器。 使用历史包含半导体功率开关元件的开关次数，半导体功率开关元件的过电流检测次数和半导体功率模块的温度上升之一的信息。

公开(公告)号：US07417487B2

公开(公告)日：2008-08-26

申请号：US11413007

申请日：2006-04-28

申请人： Kazuhisa Mori

发明人： Kazuhisa Mori

IPC分类号： G01K7/00

CPC分类号： H01L27/0248

摘要： An overheat detecting circuit according to an embodiment of the invention includes: a current source for generating a constant current; an overheat detecting element unit that operates with a first current generated in accordance with the constant current and generates a first voltage based on a semiconductor substrate temperature; and a detecting circuit unit that operates a second current generated in accordance with the constant current, and generates a second voltage corresponding to a predetermined semiconductor substrate temperature to detect overheating based on a voltage difference between the first voltage and a reference voltage and a voltage difference between the second voltage and the reference voltage.

摘要翻译： 根据本发明实施例的过热检测电路包括：用于产生恒定电流的电流源; 过热检测元件单元，其以根据所述恒定电流生成的第一电流进行工作，并且基于半导体衬底温度产生第一电压; 以及检测电路单元，其操作根据恒定电流产生的第二电流，并且产生对应于预定半导体衬底温度的第二电压，以基于第一电压和参考电压之间的电压差和电压差来检测过热 在第二电压和参考电压之间。

公开(公告)号：US07239495B2

公开(公告)日：2007-07-03

申请号：US10866826

申请日：2004-06-15

申请人： Kazuhisa Mori ,  Ikuo Fukami

发明人： Kazuhisa Mori ,  Ikuo Fukami

IPC分类号： H02H3/08

CPC分类号： H03K17/0822

摘要： When the overcurrent detection circuit detects that a voltage drop of the output transistor exceeds a threshold value, it turns on the switch by the first operational amplifier. In the shut-down signal generation circuit, the capacitor is charged with a charge current determined based on a current depending on the voltage drop of the output transistor. The shut-down signal generation circuit generates a shut-down signal to turn off the output switch when a voltage of the capacitor exceeds a voltage of the inverting input terminal of the second operational amplifier.

摘要翻译： 当过电流检测电路检测到输出晶体管的电压降超过阈值时，由第一运算放大器接通开关。 在关闭信号发生电路中，对电容器进行充电，该充电电流基于取决于输出晶体管的电压降的电流而确定。 当电容器的电压超过第二运算放大器的反相输入端的电压时，关闭信号产生电路产生关闭信号以关闭输出开关。

公开(公告)号：US06429486B1

公开(公告)日：2002-08-06

申请号：US09444374

申请日：1999-11-22

申请人： Katsumi Abe ,  Kazuhisa Mori

发明人： Katsumi Abe ,  Kazuhisa Mori

IPC分类号： H01L2701

CPC分类号： H01L27/1203 ,  H01L21/76283 ,  H01L21/76286

摘要： A semiconductor device of a SOI (silicon on insulator) structure includes a P-type silicon support substrate, a first insulating layer formed on the semiconductor support substrate, and an SOI layer formed on the first insulating layer. A first hole is formed to penetrate through the semiconductor layer and the first insulating layer, and a P-type polysilicon layer is filled in the first hole so that the P-type polysilicon layer is electrically connected to the semiconductor support substrate. A second insulating layer is formed on the SOI layer. A second hole is formed to penetrate through the second insulating layer in alignment with the first hole, and an aluminum electrode is formed on the second insulating layer to fill the second hole, so that the aluminum electrode is electrically connected through the P-type polysilicon layer to the silicon support substrate. Thus, the potential of the silicon support substrate can be fixed through the aluminum electrode formed on the SOI layer side.

摘要翻译： SOI（绝缘体上硅）结构的半导体器件包括P型硅支撑衬底，形成在半导体支撑衬底上的第一绝缘层和形成在第一绝缘层上的SOI层。 第一孔形成为穿透半导体层和第一绝缘层，并且P型多晶硅层填充在第一孔中，使得P型多晶硅层电连接到半导体支撑衬底。 在SOI层上形成第二绝缘层。 形成第二孔，以与第一孔对准地穿过第二绝缘层，并且在第二绝缘层上形成铝电极以填充第二孔，使得铝电极通过P型多晶硅电连接 层到硅支撑衬底。 因此，可以通过形成在SOI层侧的铝电极来固定硅支撑基板的电位。