公开(公告)号：US08243407B2

公开(公告)日：2012-08-14

申请号：US12458434

申请日：2009-07-13

申请人： Ikuo Fukami

发明人： Ikuo Fukami

IPC分类号： H02H3/00

CPC分类号： H03K17/0822

摘要： A semiconductor switch control device includes a current detecting unit that detects a current that flows in a semiconductor switch, a voltage detecting unit that detects a voltage, and a temperature detecting unit that detects a temperature. A transient thermal resistance value providing unit provides a transient thermal resistance value Zth in accordance with an elapsed time from reception of an excess voltage signal to a computing unit. A temperature detecting unit detects an initial temperature TJ0 when an excess voltage is produced. The computing unit calculates a temperature of the semiconductor switch by a following expression when a detected current value is represented by Ids, and a detected voltage value is represented by Vds: (expression): temperature of the semiconductor switch TJ=Ids×Vds×Zth+TJ0.

摘要翻译： 半导体开关控制装置包括检测半导体开关中流动的电流的电流检测单元，检测电压的电压检测单元和检测温度的温度检测单元。 瞬态热阻值提供单元根据从接收过电压信号到计算单元的经过时间提供瞬态热阻值Zth。 当产生过电压时，温度检测单元检测初始温度TJ0。 当检测到的电流值由Ids表示时，计算单元通过以下表达式计算半导体开关的温度，并且检测电压值由Vds表示：（表达式）：半导体开关TJ = Ids×Vds×Zth的温度 + TJ0。

公开(公告)号：US07724070B2

公开(公告)日：2010-05-25

申请号：US11304697

申请日：2005-12-16

申请人： Ikuo Fukami

发明人： Ikuo Fukami

IPC分类号： H02M3/18

CPC分类号： H02M3/07

摘要： A charge charge-pump circuit according to an embodiment of the invention includes: a first boosting capacitor; a second boosting capacitor series-connected with the first boosting capacitor; a first boosting clock driver connected between the first boosting capacitor and the second boosting capacitor and boosting the first boosting capacitor; and a second boosting clock driver connected with the second boosting capacitor and boosting the first boosting capacitor and the second boosting capacitor after the first boosting clock driver boosts the first boosting capacitor.

摘要翻译： 根据本发明实施例的充电电荷泵电路包括：第一升压电容器; 与第一升压电容器串联连接的第二升压电容器; 第一升压时钟驱动器，连接在第一升压电容器和第二升压电容器之间并升压第一升压电容器; 以及与所述第二升压电容器连接的第二升压时钟驱动器，并且在所述第一升压时钟驱动器升压所述第一升压电容器之后，升压所述第一升压电容器和所述第二升压电容器。

公开(公告)号：US20080169863A1

公开(公告)日：2008-07-17

申请号：US11926589

申请日：2007-10-29

申请人： Ikuo FUKAMI

发明人： Ikuo FUKAMI

IPC分类号： H02M3/07 ,  H02M3/04

CPC分类号： H02M3/07

摘要： In a semiconductor integrated circuit device including a charge pump circuit flowing an operating current therethrough, a current circuit is adapted to receive the operating current and a substantially constant current and generate an inverse relative to the operating current and the substantially constant current.

摘要翻译： 在包括流过工作电流的电荷泵电路的半导体集成电路器件中，电流电路适于接收工作电流和基本上恒定的电流，并相对于工作电流和基本上恒定的电流产生反相。

公开(公告)号：US07239495B2

公开(公告)日：2007-07-03

申请号：US10866826

申请日：2004-06-15

申请人： Kazuhisa Mori ,  Ikuo Fukami

发明人： Kazuhisa Mori ,  Ikuo Fukami

IPC分类号： H02H3/08

CPC分类号： H03K17/0822

摘要： When the overcurrent detection circuit detects that a voltage drop of the output transistor exceeds a threshold value, it turns on the switch by the first operational amplifier. In the shut-down signal generation circuit, the capacitor is charged with a charge current determined based on a current depending on the voltage drop of the output transistor. The shut-down signal generation circuit generates a shut-down signal to turn off the output switch when a voltage of the capacitor exceeds a voltage of the inverting input terminal of the second operational amplifier.

摘要翻译： 当过电流检测电路检测到输出晶体管的电压降超过阈值时，由第一运算放大器接通开关。 在关闭信号发生电路中，对电容器进行充电，该充电电流基于取决于输出晶体管的电压降的电流而确定。 当电容器的电压超过第二运算放大器的反相输入端的电压时，关闭信号产生电路产生关闭信号以关闭输出开关。

公开(公告)号：US08780517B2

公开(公告)日：2014-07-15

申请号：US12772638

申请日：2010-05-03

申请人： Ikuo Fukami

发明人： Ikuo Fukami

IPC分类号： H02H5/04

CPC分类号： H03K17/0822 ,  H01L27/0251 ,  H03K2017/0806

摘要： Provided is a semiconductor apparatus which includes a power transistor that is placed between an input terminal and an output terminal, a temperature detection diode that has a cathode connected to the input terminal and an anode connected to the output terminal, a current amplifier that outputs a detection current generated by amplifying a backward leakage current flowing from the cathode to the anode of the temperature detection diode, a first conversion resistor that outputs an overheat detection signal generated by converting the detection current into a voltage, a gating circuit that performs gating of a control signal according to the overheat detection signal, and a driver circuit that outputs a drive signal to a control terminal of the power transistor based on an output signal of the gating circuit.

摘要翻译： 本发明提供一种半导体装置，其具备放置在输入端子与输出端子之间的功率晶体管，具有与输入端子连接的阴极的温度检测二极管和与输出端子连接的阳极的电流放大器， 通过放大从温度检测二极管的阴极流向阳极的反向漏电流产生的检测电流;输出通过将检测电流转换为电压而产生的过热检测信号的第一转换电阻;执行门控的门控电路 根据过热检测信号的控制信号，以及根据门控电路的输出信号将驱动信号输出到功率晶体管的控制端的驱动电路。

公开(公告)号：US08531170B2

公开(公告)日：2013-09-10

申请号：US13037993

申请日：2011-03-01

申请人： Ikuo Fukami ,  Masaji Nakano

发明人： Ikuo Fukami ,  Masaji Nakano

IPC分类号： G05F3/16

CPC分类号： G05F1/00

摘要： A semiconductor device of the present invention includes an output transistor connected between a power supply terminal and an output terminal; a detection transistor generating a detection current that is proportional to a current flowing through the output transistor; a detection voltage generation unit generating a detection voltage based on a detection current; a protection transistor drawing a current from a control terminal of the output transistor to the output terminal according to the detection voltage; and a limited current generation circuit that generates a limited current that is obtained by converting a limit setting current that sets a current flowing through the output transistor in a protection state according to a variation of a threshold voltage of the protection transistor and a variation of the detection voltage with respect to the detection current, and supplies the limited current to a first terminal of the protection transistor.

摘要翻译： 本发明的半导体器件包括连接在电源端子和输出端子之间的输出晶体管; 产生与流过所述输出晶体管的电流成比例的检测电流的检测晶体管; 检测电压生成单元，其基于检测电流生成检测电压; 保护晶体管，根据检测电压将电流从输出晶体管的控制端子引出到输出端子; 以及有限的电流产生电路，其产生通过根据保护晶体管的阈值电压的变化以及根据保护晶体管的阈值电压的变化将流过输出晶体管的电流设置为保护状态的极限设定电流而获得的有限电流， 相对于检测电流的检测电压，并将限制电流提供给保护晶体管的第一端子。

公开(公告)号：US08405451B2

公开(公告)日：2013-03-26

申请号：US13041069

申请日：2011-03-04

申请人： Ikuo Fukami

发明人： Ikuo Fukami

IPC分类号： G05F1/10

CPC分类号： G05F3/02

摘要： A current source circuit includes a reference current source circuit; a reference voltage source circuit generating a voltage proportional to a thermal voltage based on the reference current; a first transistor connected between the reference voltage source circuit and the second power supply voltage and through which a first current flows; a second transistor which has a gate applied with a voltage as a result of addition of the voltage generated by the reference voltage source circuit and a voltage between a source and a drain of the first transistor and through which a second current flows; a current source supplying a third current of a current value proportional to that of the first current; and a third transistor through which a difference current between the second current and the third current flows. An output current is supplied based on the difference current.

摘要翻译： 电流源电路包括参考电流源电路; 参考电压源电路，其基于所述参考电流产生与热电压成比例的电压; 连接在参考电压源电路和第二电源电压之间的第一晶体管，第一电流流过第一晶体管; 第二晶体管，其具有施加电压作为由参考电压源电路产生的电压和第一晶体管的源极和漏极之间的电压并且第二电流流过的电压的结果; 提供与第一电流成比例的电流值的第三电流的电流源; 以及第三晶体管，其中第二电流和第三电流之间的差电流流过该第三晶体管。 基于差分电流提供输出电流。

公开(公告)号：US20100046123A1

公开(公告)日：2010-02-25

申请号：US12458434

申请日：2009-07-13

申请人： Ikuo Fukami

发明人： Ikuo Fukami

IPC分类号： H02H7/00

CPC分类号： H03K17/0822

摘要： A semiconductor switch control device includes a current detecting unit that detects a current that flows in a semiconductor switch, a voltage detecting unit that detects a voltage, and a temperature detecting unit that detects a temperature. A transient thermal resistance value providing unit provides a transient thermal resistance value Zth in accordance with an elapsed time from reception of an excess voltage signal to a computing unit. A temperature detecting unit detects an initial temperature TJ0 when an excess voltage is produced. The computing unit calculates a temperature of the semiconductor switch by a following expression when a detected current value is represented by Ids, and a detected voltage value is represented by Vds: (expression): temperature of the semiconductor switch TJ=Ids×Vds×Zth+TJ0.

摘要翻译： 半导体开关控制装置包括检测半导体开关中流动的电流的电流检测单元，检测电压的电压检测单元和检测温度的温度检测单元。 瞬态热阻值提供单元根据从接收过电压信号到计算单元的经过时间提供瞬态热阻值Zth。 当产生过电压时，温度检测单元检测初始温度TJ0。 当检测到的电流值由Ids表示时，计算单元通过以下表达式计算半导体开关的温度，并且检测电压值由Vds表示：（表达式）：半导体开关TJ = Ids×Vds×Zth的温度 + TJ0。

公开(公告)号：US07129759B2

公开(公告)日：2006-10-31

申请号：US11035060

申请日：2005-01-14

申请人： Ikuo Fukami

发明人： Ikuo Fukami

IPC分类号： H03K3/00

CPC分类号： H03K17/0822 ,  H03K17/063 ,  H03K2017/0806

摘要： The power IC includes an output transistor M0 which controls a current flowing into an L load, a dynamic clamp circuit which clamps an overvoltage, and a clamp control circuit which controls the operation of the dynamic clamp circuit. The clamp control circuit activates the dynamic clamp circuit, which is normally inactive, upon detection of a back EMF by the L load.

摘要翻译： 功率IC包括控制流入L负载的电流的输出晶体管M 0，钳位过电压的动态钳位电路以及控制动态钳位电路的动作的钳位控制电路。 当L负载检测到反电动势时，钳位控制电路激活通常无效的动态钳位电路。

公开(公告)号：US5828308A

公开(公告)日：1998-10-27

申请号：US906503

申请日：1997-08-05

申请人： Ikuo Fukami

发明人： Ikuo Fukami

IPC分类号： G01R19/00 ,  G01R19/165 ,  H01L21/822 ,  H01L23/58 ,  H01L27/04 ,  H01L29/08 ,  H01L29/78 ,  G08B21/00

CPC分类号： H01L29/7824 ,  G01R19/0092 ,  G01R19/16571 ,  H01L29/7809 ,  H01L29/7815 ,  H01L29/0847 ,  H01L2924/0002

摘要： A current sensing circuit is provided for a current driving transistor to see whether or not excess current flows into an external load, a vertical transistor serves as the current driving transistor and a resistor for converting the amount of driving current to a potential drop, and a drain node connected to a power supply line, and a source node connected to the external load and a sensing node connected to a voltage comparator are provided on a major surface of a semiconductor substrate so as to supply various electric powers through a plurality of current driving transistors respectively accompanied with current sensing circuits and integrated on a single semiconductor chip to the external load.

摘要翻译： 为电流驱动晶体管提供电流检测电路，以查看过剩电流是否流入外部负载，垂直晶体管用作电流驱动晶体管和用于将驱动电流量转换为电位降的电阻器，以及 漏电节点连接到电源线，并且连接到外部负载的源节点和连接到电压比较器的感测节点设置在半导体衬底的主表面上，以便通过多个电流驱动提供各种电力 分别伴随电流感测电路并集成在单个半导体芯片上的晶体管与外部负载。