公开(公告)号：US06429486B1

公开(公告)日：2002-08-06

申请号：US09444374

申请日：1999-11-22

申请人： Katsumi Abe ,  Kazuhisa Mori

发明人： Katsumi Abe ,  Kazuhisa Mori

IPC分类号： H01L2701

CPC分类号： H01L27/1203 ,  H01L21/76283 ,  H01L21/76286

摘要： A semiconductor device of a SOI (silicon on insulator) structure includes a P-type silicon support substrate, a first insulating layer formed on the semiconductor support substrate, and an SOI layer formed on the first insulating layer. A first hole is formed to penetrate through the semiconductor layer and the first insulating layer, and a P-type polysilicon layer is filled in the first hole so that the P-type polysilicon layer is electrically connected to the semiconductor support substrate. A second insulating layer is formed on the SOI layer. A second hole is formed to penetrate through the second insulating layer in alignment with the first hole, and an aluminum electrode is formed on the second insulating layer to fill the second hole, so that the aluminum electrode is electrically connected through the P-type polysilicon layer to the silicon support substrate. Thus, the potential of the silicon support substrate can be fixed through the aluminum electrode formed on the SOI layer side.

摘要翻译： SOI（绝缘体上硅）结构的半导体器件包括P型硅支撑衬底，形成在半导体支撑衬底上的第一绝缘层和形成在第一绝缘层上的SOI层。 第一孔形成为穿透半导体层和第一绝缘层，并且P型多晶硅层填充在第一孔中，使得P型多晶硅层电连接到半导体支撑衬底。 在SOI层上形成第二绝缘层。 形成第二孔，以与第一孔对准地穿过第二绝缘层，并且在第二绝缘层上形成铝电极以填充第二孔，使得铝电极通过P型多晶硅电连接 层到硅支撑衬底。 因此，可以通过形成在SOI层侧的铝电极来固定硅支撑基板的电位。

公开(公告)号：US08797246B2

公开(公告)日：2014-08-05

申请号：US13396180

申请日：2012-02-14

申请人： Katsumi Abe

发明人： Katsumi Abe

IPC分类号： G09G3/36

CPC分类号： G09G3/3696 ,  G09G3/3614 ,  G09G3/3648 ,  G09G2300/08 ,  G09G2320/02 ,  G09G2320/0223

摘要： A liquid crystal display substrate has a data driver circuit and a gate driver circuit for driving the liquid crystal display integrated thereon together with a common drive circuit, where common voltages VCOMH and VCOML are applied from the outside through a pad. The gate driver circuit is placed to be adjacent to one of the four terminals of the liquid crystal display. The common drive circuit is placed to be adjacent to the terminal opposite to where the gate driver circuit is placed and as close to the pad as possible while having almost the same width as the area of the gate driver circuit. The pad close to where the common drive circuit is placed is used as the pad for applying the common voltages VCOMH and VCOML.

摘要翻译： 液晶显示基板具有用于驱动集成在其上的液晶显示器的数据驱动电路和栅极驱动电路以及公共驱动电路，其中通过焊盘从外部施加公共电压VCOMH和VCOML。 栅极驱动器电路被放置成与液晶显示器的四个端子中的一个相邻。 公共驱动电路放置成与栅极驱动电路放置的位置相对的端子，并且尽可能靠近焊盘，同时具有与栅极驱动器电路的面积几乎相同的宽度。 靠近公共驱动电路放置的焊盘用作施加公共电压VCOMH和VCOML的焊盘。

公开(公告)号：US08722288B2

公开(公告)日：2014-05-13

申请号：US13503227

申请日：2010-11-04

申请人： Shigetaka Numazawa ,  Katsumi Abe ,  Makoto Koike ,  Kiyotaka Ihara

发明人： Shigetaka Numazawa ,  Katsumi Abe ,  Makoto Koike ,  Kiyotaka Ihara

IPC分类号： G03G15/02

CPC分类号： C07C211/58 ,  G03G5/0614

摘要： [Problems] To provide a novel compound which has a high carrier mobility and is useful as a charge-transporting agent that is not only capable of stably forming a photosensitive layer without precipitating crystals or forming pinholes at the time of forming the photosensitive layer but is also capable of forming an organic photosensitive material for electrophotography that has a high sensitivity and a low residual potential.[Means for Solution] A diphenylnaphthylamine derivative represented by the following general formula (1), wherein R1 to R3 are alkyl groups, k is an integer of 0 to 3, j is an integer of 0 to 4, l is an integer of 0 to 6, and X1 and X2 are hydrocarbon groups having at least one ethylenically unsaturated bond.

摘要翻译： [问题]提供具有高载流子迁移率并可用作电荷输送剂的新型化合物，其不仅能够在形成感光层时不会析出晶体或形成针孔而稳定地形成感光层，而且可以形成光敏层 也能够形成具有高灵敏度和低残留电位的电子照相用有机感光材料。 [解决方案]由以下通式（1）表示的二苯基萘胺衍生物，其中R 1至R 3为烷基，k为0至3的整数，j为0至4的整数，l为0的整数 至6，并且X 1和X 2为具有至少一个烯属不饱和键的烃基。

公开(公告)号：US08654114B2

公开(公告)日：2014-02-18

申请号：US12667827

申请日：2008-07-29

申请人： Hisae Shimizu ,  Katsumi Abe ,  Ryo Hayashi

发明人： Hisae Shimizu ,  Katsumi Abe ,  Ryo Hayashi

IPC分类号： G09G5/00

CPC分类号： G09G3/3258 ,  G09G3/3233 ,  G09G2300/0417 ,  G09G2300/0842 ,  G09G2320/0233 ,  G09G2320/043

摘要： In order to suppress an influence of an electrical stress on a TFT characteristic in use of a TFT, a light emitting display apparatus according to the present invention comprises organic EL devices and driving circuits for driving the organic EL devices. The driving circuit includes plural pixels each having a thin film transistor of which a threshold voltage reversibly changes due to the electrical stress applied between a gate terminal and a source terminal, and a voltage applying unit which sets gate potential of the thin film transistor higher than source potential. The voltage applying unit applies the electrical stress between the gate terminal and the source terminal at a time when the thin film transistor is not driven, so as to drive the thin film transistor in a region that the threshold voltage is saturated to the electrical stress.

摘要翻译： 为了抑制电应力对使用TFT的TFT特性的影响，根据本发明的发光显示装置包括有机EL器件和用于驱动有机EL器件的驱动电路。 驱动电路包括多个像素，每个像素具有薄膜晶体管，其阈值电压由于在栅极端子和源极端子之间施加的电应力而可逆地改变;以及电压施加单元，其将薄膜晶体管的栅极电位设置为高于 源潜力。 电压施加单元在薄膜晶体管未被驱动时在栅极端子和源极端子之间施加电应力，以便在阈值电压饱和到电应力的区域中驱动薄膜晶体管。

公开(公告)号：US08599111B2

公开(公告)日：2013-12-03

申请号：US12162929

申请日：2007-03-08

申请人： Katsumi Abe ,  Masafumi Sano ,  Ryo Hayashi ,  Hideya Kumomi

发明人： Katsumi Abe ,  Masafumi Sano ,  Ryo Hayashi ,  Hideya Kumomi

IPC分类号： G09G3/30 ,  G09G5/10

CPC分类号： G09G3/3283 ,  G09G3/2014 ,  G09G3/325 ,  G09G2300/0819 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2310/0251 ,  G09G2310/066 ,  G09G2320/0238 ,  G09G2320/043

摘要： A driving circuit of a display element includes a current source circuit having a first transistor and a holding circuit for holding a gate voltage of the first transistor during a first period at an electric potential corresponding to a constant current to be supplied to the display element, and a control circuit including a second transistor connected in series to the current source circuit and connected in parallel to the display element and the capacitor element whose one terminal is connected to a gate of the second transistor and the other terminal is connected to a line, and controlling the light emission time of the display element by controlling the second transistor during a third period. A constant voltage is applied from the line during the first period. The gray-scale voltage is applied from the line during a second period, and the gate of the second transistor and the one terminal are short-circuited. In addition, an electric charge based on the difference between the gray-scale voltage and the gate voltage of the second transistor is accumulated in the capacitor element, and a sweep voltage is applied during the third period, so that the ON time of the second transistor is controlled.

摘要翻译： 显示元件的驱动电路包括具有第一晶体管和保持电路的电流源电路，所述保持电路用于在第一周期期间保持与要提供给显示元件的恒定电流相对应的电位的第一晶体管的栅极电压， 以及控制电路，包括与所述电流源电路串联连接并并联连接到所述显示元件的第二晶体管和所述电容器元件，所述电容器元件的一个端子连接到所述第二晶体管的栅极，并且所述另一端子连接到线路， 以及通过在第三周期期间控制所述第二晶体管来控制所述显示元件的发光时间。 在第一周期期间从线路施加恒定电压。 在第二周期期间，从线路施加灰度电压，并且第二晶体管的栅极和一个端子短路。 此外，基于第二晶体管的灰度电压和栅极电压之间的差异的电荷累积在电容器元件中，并且在第三周期期间施加扫描电压，使得第二时间的导通时间 晶体管被控制。

公开(公告)号：US08525175B2

公开(公告)日：2013-09-03

申请号：US13161328

申请日：2011-06-15

申请人： Sho Suzuki ,  Katsumi Abe ,  Ryo Hayashi ,  Hideya Kumomi

发明人： Sho Suzuki ,  Katsumi Abe ,  Ryo Hayashi ,  Hideya Kumomi

IPC分类号： H01L29/04

CPC分类号： H01L27/1225 ,  H01L27/124

摘要： An electronic device includes: multiple electronic elements each including a semiconductor film; and an element isolation region provided between adjacent ones of the multiple electronic elements, the element isolation region including a semiconductor film having a bandgap of 1.95 eV or more, an insulating film, and an element isolation electrode, the element isolation electrode being an electrode which is separated from the semiconductor film of the element isolation region by the insulating film and is applied with a voltage so as to increase a resistance of the semiconductor film of the element isolation region, to thereby electrically isolate the multiple electronic elements from one another.

摘要翻译： 电子设备包括：多个电子元件，每个电子元件包括半导体膜; 以及设置在所述多个电子元件的相邻元件之间的元件隔离区域，所述元件隔离区域包括具有1.95eV以上的带隙的半导体膜，绝缘膜和元件隔离电极，所述元件隔离电极为电极， 通过绝缘膜与元件隔离区域的半导体膜分离，并施加电压以增加元件隔离区域的半导体膜的电阻，从而使多个电子元件彼此电隔离。

公开(公告)号：US20130214854A1

公开(公告)日：2013-08-22

申请号：US13881266

申请日：2011-10-31

申请人： Katsumi Abe ,  Hideya Kumomi ,  Ryo Hayashi ,  Tatsuya Iwasaki

发明人： Katsumi Abe ,  Hideya Kumomi ,  Ryo Hayashi ,  Tatsuya Iwasaki

IPC分类号： H01L29/786 ,  G05F3/02

CPC分类号： H01L29/7869 ,  G05F3/02 ,  H01L27/0705 ,  H01L27/11807 ,  H01L27/1203 ,  H03K17/063 ,  H03K17/693 ,  H03K19/20

摘要： Provided is a semiconductor device, including an electrode, a first insulator, a first semiconductor having a bandgap of 2 eV or greater, a second insulator, and a second semiconductor, which are stacked on one another, and at least further including one or more electrodes in contact with the first semiconductor and two or more electrodes in contact with the second semiconductor.

摘要翻译： 提供了一种半导体器件，其包括彼此堆叠的电极，第一绝缘体，具有2eV以上的带隙的第一半导体，第二绝缘体和第二半导体，并且至少进一步包括一个或多个 与第一半导体接触的电极和与第二半导体接触的两个或多个电极。

公开(公告)号：US20120212471A1

公开(公告)日：2012-08-23

申请号：US13396180

申请日：2012-02-14

申请人： Katsumi Abe

发明人： Katsumi Abe

IPC分类号： G09G5/00

CPC分类号： G09G3/3696 ,  G09G3/3614 ,  G09G3/3648 ,  G09G2300/08 ,  G09G2320/02 ,  G09G2320/0223

摘要： To provide a liquid crystal display capable of implementing a symmetrical frame and a narrower frame without lowering drive capability of a common drive circuit.[Solution]A liquid crystal display substrate 10 has a data driver circuit 2 and a gate driver circuit 3 for driving the liquid crystal display integrated thereon together with a common drive circuit 4, where common voltages VCOMH and VCOML are applied from the outside through a pad. The gate driver circuit 3 is placed to be adjacent to one of the four terminals of the liquid crystal display. The common drive circuit 4 is placed to be adjacent to the terminal opposite to where the gate driver circuit 3 is placed and as close to the pad as possible while having almost the same width as the area of the gate driver circuit 3. The pad close to where the common drive circuit 4 is placed is used as the pad for applying the common voltages VCOMH and VCOML.

摘要翻译： 提供能够实现对称框架和较窄框架而不降低公共驱动电路的驱动能力的液晶显示器。 [解决方案]液晶显示基板10具有数据驱动电路2和用于驱动集成在其上的液晶显示器的栅极驱动电路3以及公共驱动电路4，其中公共电压VCOMH和VCOML从外部通过一个 垫。 栅极驱动器电路3被放置成与液晶显示器的四个端子中的一个相邻。 公共驱动电路4被放置成与栅极驱动器电路3相对的端子相邻，并且尽可能靠近焊盘，同时具有与栅极驱动器电路3的面积几乎相同的宽度。焊盘闭合 使用公共驱动电路4的位置作为用于施加公共电压VCOMH和VCOML的焊盘。

公开(公告)号：US08084331B2

公开(公告)日：2011-12-27

申请号：US12865032

申请日：2009-03-02

申请人： Masato Ofuji ,  Katsumi Abe ,  Hisae Shimizu ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko

发明人： Masato Ofuji ,  Katsumi Abe ,  Hisae Shimizu ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko

IPC分类号： H01L21/331

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78633

摘要： In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm−2eV−1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.

摘要翻译： 在处理至少包括半导体的半导体元件的方法中，通过用比半导体的吸收边缘波长更长的光照射半导体来改变半导体元件的阈值电压。 半导体中间隙状态的面密度为1013cm-2eV-1或更小。 带隙可以是2eV或更大。 半导体可以包括选自In，Ga，Zn和Sn中的至少一种。 半导体可以是选自由无定形In-Ga-Zn-O（IGZO），非晶In-Zn-O（IZO）和无定形Zn-Sn-O（ZTO）组成的组中的一种。 光照射可以引起半导体元件中的阈值电压偏移，该偏移与由制造工艺历史，时间依赖变化，电应力或热应力引起的阈值电压偏移相反。

公开(公告)号：US20110111219A1

公开(公告)日：2011-05-12

申请号：US12226045

申请日：2007-04-12

申请人： Katsumi Abe ,  Shinichiro Sano ,  Kiyofumi Fukasawa

发明人： Katsumi Abe ,  Shinichiro Sano ,  Kiyofumi Fukasawa

IPC分类号： C08K3/22 ,  C09J111/00 ,  C09J115/02 ,  C09J147/00 ,  C09J161/10 ,  B32B7/12

CPC分类号： C08J5/125 ,  B32B15/06 ,  C08J2321/00 ,  C08J2333/06 ,  C08K3/22 ,  C08L15/02 ,  C08L27/00 ,  C08L2666/04 ,  C09J5/02 ,  C09J161/06 ,  C09J2205/306 ,  C09J2461/00 ,  Y10T428/2804

摘要： A vulcanizable adhesive composition, which comprises 45-75% by weight of phenol resin, preferably a mixture of novolak-type and resol-type phenol resins, 5-25% by weight of halogenated polymer, and 10-30% by weight of a metal oxide, can improve an interlayer adhesiveness between the acrylic rubber and metal without surface treatment of metal, such as a chemical treatment, e.g. zinc phosphate treatment, etc., blast treatment, or primer treatment, and thus can be effectively used in the production of a metal/adhesive layer/acrylic rubber composite.

摘要翻译： 一种可硫化的粘合剂组合物，其包含45-75重量％的酚醛树脂，优选酚醛清漆型和甲阶酚醛型酚醛树脂的混合物，5-25重量％的卤化聚合物和10-30重量％的 金属氧化物，可以改善丙烯酸橡胶和金属之间的层间粘合性而不进行金属的表面处理，例如化学处理，例如， 磷酸锌处理等，喷砂处理或底漆处理，因此可以有效地用于生产金属/粘合剂层/丙烯酸橡胶复合材料。