公开(公告)号：US20070171950A1

公开(公告)日：2007-07-26

申请号：US11469501

申请日：2006-09-01

Applicant: Kazuhisa TAKAGI ,  Takeshi YAMATOYA ,  Chikara WATATANI

Inventor： Kazuhisa TAKAGI ,  Takeshi YAMATOYA ,  Chikara WATATANI

IPC: H01S5/00

CPC classification number: H01S5/12 ,  H01S5/2004 ,  H01S5/22 ,  H01S5/2275

Abstract: A semiconductor laser has a structure in which the following layers are stacked on one another over an n-type substrate: a buffer layer, a diffraction grating layer, a diffraction grating burying layer, a light confining layer, a multiple quantum well active layer, a light confining layer, and a cladding layer. In this structure, the distance D between the center of the active layer and the interface between the n-type substrate and the buffer layer is set to a value longer than the 1/e2-beam spot radius a of the laser light.

Abstract translation: 半导体激光器具有以下结构：在n型衬底上彼此层叠以下层：缓冲层，衍射光栅层，衍射光栅掩埋层，光限制层，多量子阱活性层， 光限制层和包覆层。 在该结构中，有源层的中心与n型衬底与缓冲层之间的界面之间的距离D被设定为比1 / e 2射束光斑半径 一个激光。

公开(公告)号：US20130016939A1

公开(公告)日：2013-01-17

申请号：US13399350

申请日：2012-02-17

Applicant: Kazuhisa TAKAGI

Inventor： Kazuhisa TAKAGI

IPC: G02F1/035

CPC classification number: G02F1/21 ,  G02F2001/212 ,  H04B10/5561

Abstract: An optical device includes: a substrate; an optical branching filter on the substrate and dividing input light into first and second input lights; first and second Mach-Zehnder optical modulators on the substrate and respectively modulating the first and second input lights; and an optical coupler on the substrate and combining light modulated by the first Mach-Zehnder optical modulator and light modulated by the second Mach-Zehnder optical modulator. Each of the first and second Mach-Zehnder optical modulator includes two optical waveguides, a phase modulation electrode applying a modulation voltage across the optical waveguides to change phases of light in the optical waveguides, and a feed line and a terminal line respectively connected to opposite ends of the phase modulation electrode to supply the modulation voltage to the phase modulation electrode. The feed lines and the terminal lines respectively extend to peripheral portions of the substrate.

Abstract translation: 光学装置包括：基板; 基板上的光分路滤波器，并将输入光分成第一和第二输入光; 第一和第二马赫 - 曾德尔光学调制器，分别调制第一和第二输入光; 以及光耦合器，并且组合由第一马赫 - 曾德尔光调制器调制的光和由第二马赫 - 策德尔光调制器调制的光。 第一和第二马赫 - 策德尔光调制器中的每一个包括两个光波导，相位调制电极，跨越光波导施加调制电压以改变光波导中的光的相位，以及分别连接到相对的光波导的馈线和端子线 相位调制电极的端部向相位调制电极提供调制电压。 馈电线和端子线分别延伸到衬底的周边部分。

公开(公告)号：US20070268949A1

公开(公告)日：2007-11-22

申请号：US11530968

申请日：2006-09-12

Applicant: Kazuhisa TAKAGI

Inventor： Kazuhisa TAKAGI

IPC: H01S5/00

CPC classification number: H01S5/12 ,  H01S5/1064 ,  H01S5/1225 ,  H01S5/124 ,  H01S5/20 ,  H01S5/22

Abstract: A semiconductor laser according to the present invention comprises: a substrate; an n-cladding layer disposed on the substrate; an active layer disposed on the n-cladding layer; a p-cladding layer disposed on the active layer and forming a waveguide ridge; and a diffraction grating layer disposed between the active layer and the n-cladding layer or the p-cladding layer and including a phase shift structure in a part of the diffraction grating layer in an optical waveguide direction. The width of the p-cladding layer is increased in a portion corresponding to the phase shift structure of the diffraction grating layer.

Abstract translation: 根据本发明的半导体激光器包括：基板; 设置在所述基板上的n包层; 设置在n包层上的有源层; p层，设置在有源层上并形成波导脊; 以及设置在有源层和n包层或p包层之间的衍射光栅层，并且在衍射光栅层的一部分中在光波导方向上包括相移结构。 p型覆层的宽度在与衍射光栅层的相移结构对应的部分增加。

公开(公告)号：US20120190147A1

公开(公告)日：2012-07-26

申请号：US13438028

申请日：2012-04-03

Applicant: Kazuhisa TAKAGI

Inventor： Kazuhisa TAKAGI

IPC: H01L33/04

CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01S5/1053 ,  H01S5/1057 ,  H01S5/124 ,  H01S5/2222 ,  H01S5/227 ,  H01S5/3412 ,  H01S5/509

Abstract: A method of manufacturing a semiconductor optical element having an active layer containing quantum dots, in which density of the quantum dots in a resonator direction in a portion of the active layer in which density of photons is high, relative to the density of the quantum dots in a portion of the active layer in which the density of photons is relatively low, includes forming the quantum dots in the active layer so that the distribution density is uniform in a resonator direction; and diffusing or implanting an impurity non-uniformly in the resonator direction in the active layer in which quantum dots are uniformly distributed, thereby disordering some of the quantum dots and forming a non-uniform density distribution of the quantum dots in the resonator direction in the active layer

Abstract translation: 一种制造半导体光学元件的方法，该半导体光学元件具有含有量子点的有源层，其中相对于量子点的密度，在有源层的光子密度高的部分中的谐振器方向上的量子点的密度 在其中光子密度相对较低的有源层的一部分中，包括在有源层中形成量子点，使得分布密度在谐振器方向上是均匀的; 并且在均匀分布量子点的有源层中在谐振器方向上不均匀地扩散或注入杂质，从而使一些量子点失调并且在谐振器方向上形成量子点在谐振器方向上的非均匀密度分布 活动层

公开(公告)号：US20120028042A1

公开(公告)日：2012-02-02

申请号：US13253837

申请日：2011-10-05

Applicant: Kunio MORI ,  Kazuhisa TAKAGI

Inventor： Kunio MORI ,  Kazuhisa TAKAGI

IPC: B32B7/12 ,  C09J7/02 ,  C03C3/00 ,  C07F19/00 ,  C08G63/91 ,  C08G77/38

CPC classification number: C09J7/35 ,  C09J2483/00 ,  Y10T428/2848 ,  Y10T428/2852

Abstract: A base material for adhesion to be adhered to a solid body includes a substrate made from metal, polymer resin, glass or ceramics whose surface is adhesive to the solid body by silyl-ether-linkage that at least one active silyl group selected from the group consisting of a hydrosilyl-containing silyl group, a vinyl-containing silyl group, an alkoxysilyl-containing silyl group and a hydrolytic group-containing silyl group having reactivity with a reactive group on the surface of the solid body is bound to a dehydrogenated residue of hydroxyl group on the surface of the substrate.

Abstract translation: 用于附着到固体的粘合基材包括由金属，聚合物树脂，玻璃或陶瓷制成的基材，其表面通过甲硅烷基醚键与固体粘合，使得至少一种活性甲硅烷基选自 由含氢化甲硅烷基的甲硅烷基，含乙烯基的甲硅烷基，含烷氧基甲硅烷基的甲硅烷基和与固体表面的反应性基团具有反应性的含水解基的甲硅烷基结合到脱氢残基 在基体表面的羟基。