公开(公告)号：US07855096B2

公开(公告)日：2010-12-21

申请号：US12034195

申请日：2008-02-20

Applicant: Chikara Watatani ,  Toru Takiguchi

Inventor： Chikara Watatani ,  Toru Takiguchi

IPC: H01L21/00

CPC classification number: H01S5/227 ,  H01S5/2086 ,  H01S5/221 ,  H01S5/2272 ,  H01S5/2275

Abstract: A semiconductor film is formed on a GaAs substrate (semiconductor substrate). An SiO2 film (insulating film) is formed on the semiconductor film, and the SiO2 film is patterned. The semiconductor film is etched using the SiO2 film as a mask to form a mesa structure. The surface of the SiO2 film is treated by ashing, using SF6 gas (fluorine-containing gas), to terminate the surface of the SiO2 film with fluorine. The mesa structure is selectively buried with a III-V compound semiconductor film, using the SiO2 film having the surface that has been terminated by fluorine, as a mask.

Abstract translation: 在GaAs衬底（半导体衬底）上形成半导体膜。 在半导体膜上形成SiO 2膜（绝缘膜），对SiO 2膜进行图案化。 使用SiO 2膜作为掩模蚀刻半导体膜以形成台面结构。 用SF6气体（含氟气体）通过灰化处理SiO 2膜的表面，用氟终止SiO 2膜的表面。 使用具有由氟终止的表面的SiO 2膜作为掩模，用III-V族化合物半导体膜选择性地掩埋台面结构。

公开(公告)号：US07816160B2

公开(公告)日：2010-10-19

申请号：US12201114

申请日：2008-08-29

Applicant: Chikara Watatani ,  Takashi Nagira

Inventor： Chikara Watatani ,  Takashi Nagira

IPC: H01L21/00

CPC classification number: G02B5/1857

Abstract: The present invention includes forming an optical guide layer on a substrate, forming a cap layer on the optical guide layer, and forming openings in parts of the optical guide layer and the cap layer to form a diffraction grating from part of the optical guide layer. The substrate is heated to a temperature less than a growth temperature of the cap layer and equal to at least a temperature at which mass transport of the cap layer occurs to cover, with part of the cap layer, the lateral faces of the optical guide layer exposed by the openings. A burying layer burying the diffraction grating is formed on the substrate, after the mass transport.

Abstract translation: 本发明包括在基板上形成光导层，在光导层上形成覆盖层，在光导层和盖层的部分形成开口，以形成衍射光栅。 衬底被加热到小于帽层的生长温度的温度，并且等于至少覆盖帽层的质量传输的温度，以覆盖覆盖层的一部分的光导层的侧面 暴露在开口处。 在传质后，在基板上形成掩埋衍射光栅的掩埋层。

公开(公告)号：US07720123B2

公开(公告)日：2010-05-18

申请号：US11611933

申请日：2006-12-18

Applicant: Tohru Takiguchi ,  Chikara Watatani

Inventor： Tohru Takiguchi ,  Chikara Watatani

IPC: H01S5/00

CPC classification number: H01S5/34313 ,  B82Y20/00 ,  H01S5/2224 ,  H01S5/2227 ,  H01S5/2275 ,  H01S5/3072

Abstract: A buried type semiconductor laser 1 is made of a p-type InP substrate 2 and includes a ridge section 6 made up of a p type InP first clad layer 3, AlGaInAs distorted quantum well active layer 4 and n type InP second clad layer 5 laminated one atop another. On both sides of the ridge section 6, an buried current block layer 10 made up of a p-type InP first buried layer 7, n-type InP second buried layer 8 and semi-insulating Fe-doped InP third buried layer 9 laminated one atop another is formed. A top face of the third buried layer 9 is covered with an n-type InP semiconductor layer 11. The above structure can suppress the occurrence of a leakage current path on the top face of the third buried layer 9 and improve reliability of the buried type semiconductor laser.

Abstract translation: 掩埋型半导体激光器1由p型InP衬底2制成，并且包括由ap型InP第一包层3，AlGaInAs失真的量子阱有源层4和n型InP第二覆盖层5组成的脊部6 在另一个上面 在脊部6的两侧，形成由p型InP第一掩埋层7，n型InP第二掩埋层8和半绝缘的Fe掺杂的InP第三掩埋层9构成的埋入电流阻挡层10， 形成另一个顶部。 第三掩埋层9的顶面被n型InP半导体层11覆盖。上述结构可以抑制在第三掩埋层9的顶面上产生漏电流路径，并且提高掩埋型的可靠性 半导体激光器。

公开(公告)号：US20080049805A1

公开(公告)日：2008-02-28

申请号：US11611933

申请日：2006-12-18

Applicant: Tohru TAKIGUCHI ,  Chikara WATATANI

Inventor： Tohru TAKIGUCHI ,  Chikara WATATANI

IPC: H01S5/00 ,  H01S3/08 ,  H01S3/04

CPC classification number: H01S5/34313 ,  B82Y20/00 ,  H01S5/2224 ,  H01S5/2227 ,  H01S5/2275 ,  H01S5/3072

Abstract: A semiconductor laser includes a p-type InP substrate and a ridge section of a p type InP first cladding layer, an AlGaInAs strained quantum well active layer and a n type InP second cladding layer, laminated one atop the other. On both sides of the ridge section, a current blocking layer including a p-type InP first burying layer, an n-type InP second burying layer, and a semi-insulating Fe-doped InP third burying layer are laminated, one atop the other. A top face of the third burying layer is covered with an n-type InP semiconductor layer. This structure suppresses leakage current on the top face of the third burying layer and improves reliability of the semiconductor laser.

Abstract translation: 半导体激光器包括p型InP衬底和p型InP第一包覆层的脊部分，AlGaInAs应变量子阱有源层和n型InP第二覆层。 在脊部的两侧，层压包括p型InP第一掩埋层，n型InP第二掩埋层和半绝缘的Fe掺杂的InP第三埋入层的电流阻挡层，一个在另一个之上 。 第三掩埋层的顶面被n型InP半导体层覆盖。 该结构抑制第三埋层的顶面的漏电流，提高半导体激光器的可靠性。

公开(公告)号：US07550304B2

公开(公告)日：2009-06-23

申请号：US11624722

申请日：2007-01-19

Applicant: Takashi Nagira ,  Chikara Watatani

Inventor： Takashi Nagira ,  Chikara Watatani

IPC: H01L21/00

CPC classification number: H01S5/227 ,  B82Y20/00 ,  H01S5/2086 ,  H01S5/2201 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/2275 ,  H01S5/34306

Abstract: A method for manufacturing a semiconductor laser element includes forming a semiconductor laminated structure, having an active layer, on a substrate; etching the semiconductor laminated structure to form a mesa; exposing the mesa to an oxygen-containing ambient forming an oxide layer on the mesa; removing a first part of the oxide layer from the mesa at a temperature lower than a critical temperature at which bonds between atoms of the oxide layer become stronger, by etching with a gas; removing the remainder of the oxide layer from the mesa at a temperature higher than the critical temperature by etching with a gas; and forming a burying layer coating the mesa.

Abstract translation: 一种制造半导体激光元件的方法包括在衬底上形成具有有源层的半导体叠层结构; 蚀刻半导体层叠结构以形成台面; 将台面暴露于在台面上形成氧化物层的含氧环境; 通过用气体蚀刻，在低于氧化物层的原子之间的键合变得更强的临界温度的温度下从台面去除第一部分氧化物层; 在高于临界温度的温度下通过用气体蚀刻从台面去除剩余的氧化物层; 并形成涂覆台面的掩埋层。

公开(公告)号：US20090087966A1

公开(公告)日：2009-04-02

申请号：US12034195

申请日：2008-02-20

Applicant: Chikara Watatani ,  Toru Takiguchi

Inventor： Chikara Watatani ,  Toru Takiguchi

IPC: H01L21/36

CPC classification number: H01S5/227 ,  H01S5/2086 ,  H01S5/221 ,  H01S5/2272 ,  H01S5/2275

Abstract: A semiconductor film is formed on a GaAs substrate (semiconductor substrate). An SiO2 film (insulating film) is formed on the semiconductor film, and the SiO2 film is patterned. The semiconductor film is etched using the SiO2 film as a mask to form a mesa structure. The surface of the SiO2 film is treated by ashing, using SF6 gas (fluorine-containing gas), to terminate the surface of the SiO2 film with fluorine. The mesa structure is selectively buried with a III-V compound semiconductor film, using the SiO2 film having the surface that has been terminated by fluorine, as a mask.

Abstract translation: 在GaAs衬底（半导体衬底）上形成半导体膜。 在半导体膜上形成SiO 2膜（绝缘膜），对SiO 2膜进行图案化。 使用SiO 2膜作为掩模蚀刻半导体膜以形成台面结构。 用SF6气体（含氟气体）通过灰化处理SiO 2膜的表面，用氟终止SiO 2膜的表面。 使用具有由氟终止的表面的SiO 2膜作为掩模，用III-V族化合物半导体膜选择性地掩埋台面结构。

公开(公告)号：US20080054277A1

公开(公告)日：2008-03-06

申请号：US11923751

申请日：2007-10-25

Applicant: Masayoshi Takemi ,  Kenichi Ono ,  Yoshihiko Hanamaki ,  Chikara Watatani ,  Tetsuya Yagi ,  Harumi Nishiguchi ,  Motoko Sasaki ,  Shinji Abe ,  Yasuaki Yoshida

Inventor： Masayoshi Takemi ,  Kenichi Ono ,  Yoshihiko Hanamaki ,  Chikara Watatani ,  Tetsuya Yagi ,  Harumi Nishiguchi ,  Motoko Sasaki ,  Shinji Abe ,  Yasuaki Yoshida

IPC: H01L27/15

CPC classification number: B82Y20/00 ,  H01S5/0421 ,  H01S5/2226 ,  H01S5/2231 ,  H01S5/34326 ,  H01S5/3436

Abstract: The semiconductor laser device includes an active layer, a p-type cladding layer, and a p-type cap layer. The layers are sequentially stacked so that the semiconductor laser device is provided. The p-type cap layer includes both a p-type dopant and an n-type dopant. In another aspect, the p-type cap layer includes a first layer including a first p-type dopant and a second layer including a second p-type dopant having a diffusion coefficient smaller than that of the first p-type dopant. The first layer is far from the active layer, and the second layer is close to the active layer. In further aspect, the p-type cap layer includes carbon (C) as a p-type dopant. According to these configuration, the p-type dopant can be prevented from being diffused in the active layer and the p-type cladding layer.

Abstract translation: 半导体激光器件包括有源层，p型覆层和p型覆盖层。 依次叠层这些层以提供半导体激光器件。 p型覆盖层包括p型掺杂剂和n型掺杂剂。 在另一方面，p型覆盖层包括包含第一p型掺杂剂的第一层和包含扩散系数小于第一p型掺杂剂的扩散系数的第二p型掺杂剂的第二层。 第一层远离有源层，第二层靠近有源层。 在另一方面，p型覆盖层包括作为p型掺杂剂的碳（C）。 根据这些结构，可以防止p型掺杂剂扩散到有源层和p型覆层中。

公开(公告)号：US20080050850A1

公开(公告)日：2008-02-28

申请号：US11624722

申请日：2007-01-19

Applicant: Takashi NAGIRA ,  Chikara WATATANI

Inventor： Takashi NAGIRA ,  Chikara WATATANI

IPC: H01L21/00

CPC classification number: H01S5/227 ,  B82Y20/00 ,  H01S5/2086 ,  H01S5/2201 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/2275 ,  H01S5/34306

Abstract: A method for manufacturing a semiconductor laser element includes forming a semiconductor laminated structure, having an active layer, on a substrate; etching the semiconductor laminated structure to form a mesa; cleaning the side of the mesa at a temperature lower thank a critical temperature at which an oxide layer forms on the side of the mesa using an etching gas; cleaning the side of the mesa at a temperature higher than the critical temperature using an etching gas; and forming a burying layer coating the side of the mesa after cleaning the side of the mesa.

Abstract translation: 一种制造半导体激光元件的方法包括在衬底上形成具有有源层的半导体叠层结构; 蚀刻半导体层叠结构以形成台面; 使用蚀刻气体感谢在台面一侧形成氧化物层的临界温度，在较低的温度下清洁台面的一侧; 使用蚀刻气体在高于临界温度的温度下清洗台面的一侧; 并且在清洁台面的侧面之后形成涂覆台面的侧面的掩埋层。

公开(公告)号：US20050123018A1

公开(公告)日：2005-06-09

申请号：US10952901

申请日：2004-09-30

Applicant: Kazuhisa Takagi ,  Satoshi Shirai ,  Toshitaka Aoyagi ,  Yasuaki Tatsuoka ,  Chikara Watatani ,  Yoshihiko Hanamaki

Inventor： Kazuhisa Takagi ,  Satoshi Shirai ,  Toshitaka Aoyagi ,  Yasuaki Tatsuoka ,  Chikara Watatani ,  Yoshihiko Hanamaki

IPC: H01S5/22 ,  H01S3/08 ,  H01S5/10 ,  H01S5/12

CPC classification number: H01S5/12 ,  H01S5/1039 ,  H01S5/1221 ,  H01S5/22

Abstract: A distributed feedback semiconductor laser includes an n-InP substrate, an n-InGaAsP diffraction grating layer above the n-InP substrate, an AlGaInAs-MQW active layer above the diffraction grating layer and a ridge portion on the active layer. The ridge portion includes a p-InP cladding layer and a p-InGaAs contact layer. The wavelength λg corresponding to the bandgap energy of the diffraction grating layer and the oscillation wavelength λ of laser light produced by the laser satisfy the relationship λ−150 nm

Abstract translation: 分布式反馈半导体激光器包括n-InP衬底，n-InP衬底上的n-InGaAsP衍射光栅层，衍射光栅层上方的AlGaInAs-MQW有源层和有源层上的脊部分。 脊部包括p-InP包层和p-InGaAs接触层。 对应于衍射光栅层的带隙能量的波长兰博德纹和由激光产生的激光的振荡波长λ满足关系式<？in-line-formula description =“In-line Formulas”end =“lead”？> λ-150nm

公开(公告)号：US20090246903A1

公开(公告)日：2009-10-01

申请号：US12201114

申请日：2008-08-29

Applicant: Chikara WATATANI ,  Takashi NAGIRA

Inventor： Chikara WATATANI ,  Takashi NAGIRA

IPC: H01L21/02

CPC classification number: G02B5/1857

Abstract: The present invention includes forming an optical guide layer on a substrate, forming a cap layer on the optical guide layer, and forming openings in parts of the optical guide layer and the cap layer to form a diffraction grating from part of the optical guide layer. The substrate is heated to a temperature less than a growth temperature of the cap layer and equal to at least a temperature at which mass transport of the cap layer occurs to cover, with part of the cap layer, the lateral faces of the optical guide layer exposed by the openings. A burying layer burying the diffraction grating is formed on the substrate, after the mass transport.

Abstract translation: 本发明包括在基板上形成光导层，在光导层上形成覆盖层，在光导层和盖层的部分形成开口，以形成衍射光栅。 衬底被加热到小于帽层的生长温度的温度，并且等于至少覆盖帽层的质量传输的温度，以覆盖覆盖层的一部分的光导层的侧面 暴露在开口处。 在传质后，在基板上形成掩埋衍射光栅的掩埋层。