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公开(公告)号：US20110200833A1
公开(公告)日：2011-08-18
申请号：US13036101
申请日：2011-02-28
摘要： A method capable of stably manufacturing a SiC single crystal in the form of a thin film or a bulk crystal having a low carrier density of at most 5×1017/cm3 and preferably less than 1×1017/cm3 and which is suitable for use in various devices by liquid phase growth using a SiC solution in which the solvent is a melt of a Si alloy employs a Si alloy having a composition which is expressed by SixCryTiz wherein x, y, and z (each in atomic percent) satisfy 0.50
摘要翻译： 一种能够稳定地制造低载体密度至多为5×1017 / cm3，优选小于1×1017 / cm3的薄膜或本体晶体形式的SiC单晶的方法，其适用于 使用其中溶剂是Si合金的熔体的SiC溶液的液相生长的各种装置采用具有由SixCryTiz表示的组成的Si合金，其中x，y和z（以原子百分比计）满足0.50
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公开(公告)号：US08388752B2
公开(公告)日：2013-03-05
申请号：US13036101
申请日：2011-02-28
IPC分类号： C30B9/00
摘要： A method capable of stably manufacturing a SiC single crystal in the form of a thin film or a bulk crystal having a low carrier density of at most 5×1017/cm3 and preferably less than 1×1017/cm3 and which is suitable for use in various devices by liquid phase growth using a SiC solution in which the solvent is a melt of a Si alloy employs a Si alloy having a composition which is expressed by SixCryTiz wherein x, y, and z (each in atomic percent) satisfy 0.50
摘要翻译： 一种能够稳定地制造低载体密度至多为5×1017 / cm3，优选小于1×1017 / cm3的薄膜或本体晶体形式的SiC单晶的方法，其适用于 使用其中溶剂是Si合金的熔体的SiC溶液的液相生长的各种装置采用具有由SixCryTiz表示的组成的Si合金，其中x，y和z（以原子百分比计）满足0.50
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公开(公告)号：US20070209573A1
公开(公告)日：2007-09-13
申请号：US11712841
申请日：2007-03-01
申请人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Akihiro Yauchi , Yoshihisa Ueda , Yutaka Itoh , Nobuhiro Okada
发明人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Akihiro Yauchi , Yoshihisa Ueda , Yutaka Itoh , Nobuhiro Okada
CPC分类号： C30B9/06 , C30B9/10 , C30B15/305 , C30B17/00 , C30B19/02 , C30B19/04 , C30B29/36 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016 , Y10T117/1072
摘要： A SiC single crystal is produced by the solution growth method in which a seed crystal attached to a seed shaft is immersed in a solution of SiC dissolved in a melt of Si or a Si alloy and a SiC single crystal is allowed to grow on the seed crystal by gradually cooling the solution or by providing a temperature gradient therein. To this method, accelerated rotation of a crucible is applied by repeatedly accelerating to a prescribed rotational speed and holding at that speed and decelerating to a lower rotational speed or a 0 rotational speed. The rotational direction of the crucible may be reversed each acceleration. The seed shaft may also be rotated synchronously with the rotation of the crucible in the same or opposite rotational as the crucible. A large, good quality single crystal having no inclusions are produced with a high crystal growth rate.
摘要翻译： 通过溶液生长法生产SiC单晶，其中将种子轴附着的晶种浸入溶解在Si或Si合金熔体中的SiC溶液中，使SiC单晶在种子上生长 通过逐渐冷却溶液或通过在其中提供温度梯度来制备。 对于这种方法，通过反复加速到规定的转速并以该速度保持并且减速到较低的转速或0转速来施加坩埚的加速旋转。 坩埚的旋转方向可以反转每个加速度。 种子轴也可以与坩埚的旋转同步旋转，与坩埚相同或相反。 以高的晶体生长速率生产不含夹杂物的大质量好的单晶。
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公开(公告)号：US07635413B2
公开(公告)日：2009-12-22
申请号：US11712841
申请日：2007-03-01
申请人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Akihiro Yauchi , Yoshihisa Ueda , Yutaka Itoh , Nobuhiro Okada
发明人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Akihiro Yauchi , Yoshihisa Ueda , Yutaka Itoh , Nobuhiro Okada
CPC分类号： C30B9/06 , C30B9/10 , C30B15/305 , C30B17/00 , C30B19/02 , C30B19/04 , C30B29/36 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016 , Y10T117/1072
摘要： A SiC single crystal is produced by the solution growth method in which a seed crystal attached to a seed shaft is immersed in a solution of SiC dissolved in a melt of Si or a Si alloy and a SiC single crystal is allowed to grow on the seed crystal by gradually cooling the solution or by providing a temperature gradient therein. To this method, accelerated rotation of a crucible is applied by repeatedly accelerating to a prescribed rotational speed and holding at that speed and decelerating to a lower rotational speed or a 0 rotational speed. The rotational direction of the crucible may be reversed each acceleration. The seed shaft may also be rotated synchronously with the rotation of the crucible in the same or opposite rotational as the crucible. A large, good quality single crystal having no inclusions are produced with a high crystal growth rate.
摘要翻译： 通过溶液生长法生产SiC单晶，其中将种子轴附着的晶种浸入溶解在Si或Si合金熔体中的SiC溶液中，使SiC单晶在种子上生长 通过逐渐冷却溶液或通过在其中提供温度梯度来制备。 对于这种方法，通过反复加速到规定的转速并以该速度保持并减速到较低的转速或0转速来施加坩埚的加速旋转。 坩埚的旋转方向可以反转每个加速度。 种子轴也可以与坩埚的旋转同步旋转，与坩埚相同或相反。 以高的晶体生长速率生产不含夹杂物的大质量好的单晶。
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公开(公告)号：US4474651A
公开(公告)日：1984-10-02
申请号：US408039
申请日：1982-08-13
CPC分类号： F16L15/004 , C25D5/10 , C25D5/36 , C25D7/04 , E21B17/042 , F16L58/182
摘要： A joint for used in connecting oil well casing and/or tubing and method of producing same are disclosed. The joint with improved metal-to-metal sealing properties as well as improved resistance to galling is made of an alloy steel containing 10% or more by weight of Cr and comprises a metal sealing portion and a threaded portion provided with an activating layer of a metal or an alloy selected iron, nickel, zinc, cobalt, copper, manganese, chromium and alloys thereof, and an electrodeposited layer of a metal or an alloy selected from iron, copper, zinc, chromium, nickel, and alloys thereof.
摘要翻译： 公开了用于连接油井套管和/或油管的接头及其制造方法。 具有改善的金属对金属密封性能以及改进的耐磨性的接头由含有10重量％或更多的Cr的合金钢制成，并且包括金属密封部分和设有激活层的螺纹部分 金属或选自铁，镍，锌，钴，铜，锰，铬及其合金的合金，以及选自铁，铜，锌，铬，镍及其合金的金属或合金的电沉积层。
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公开(公告)号：US20130130117A1
公开(公告)日：2013-05-23
申请号：US13638250
申请日：2011-03-28
申请人： Hiroshi Yamamoto , Tatsuo Nagata , Katsuhiro Nishihara , Noriyuki Negi , Akihiro Yauchi , Tooru Fujiwara
发明人： Hiroshi Yamamoto , Tatsuo Nagata , Katsuhiro Nishihara , Noriyuki Negi , Akihiro Yauchi , Tooru Fujiwara
IPC分类号： H01M4/133 , C01B31/04 , H01M4/04 , H01M4/1393
CPC分类号： H01M4/133 , C01B32/20 , C01P2006/10 , C01P2006/11 , C01P2006/19 , H01M4/0402 , H01M4/1393 , H01M4/587
摘要： Modified natural graphite particles intended for forming a negative electrode material for a nonaqueous electrolyte secondary battery are characterized by having a circularity of at least 0.93 and at most 1.0 and a surface roughness of at most 1.5% with respect to the length of the particles. These modified natural graphite particles are obtained by a manufacturing method including a step of applying an impact force to natural graphite particles for pulverization and spheroidization to obtain intermediate particles having a circularity of at least 0.93 and at most 1.0, and a step of carrying out surface smoothing of the resulting intermediate particles by mechanical grinding treatment to obtain the modified natural graphite particles.
摘要翻译： 用于形成非水电解质二次电池用负极材料的改性天然石墨粒子的特征在于，相对于粒子的长度，其圆形度为至少0.93，最多为1.0，表面粗糙度为1.5％以下。 这些改性天然石墨颗粒通过包括以下步骤获得的制造方法，该方法包括对用于粉碎和球化的天然石墨颗粒施加冲击力以获得圆形度为至少0.93至多1.0的中间颗粒的步骤，以及执行表面 通过机械研磨处理使得到的中间粒子平滑化，得到改性天然石墨粒子。
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