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1.发明申请HIGH FREQUENCY CIRCUIT, SEMICONDUCTOR DEVICE, AND HIGH FREQUENCY POWER AMPLIFICATION DEVICE 有权高频电路，半导体器件和高频功率放大器件公开(公告)号：US20080284539A1
公开(公告)日：2008-11-20
申请号：US12118803
申请日：2008-05-12
IPC分类号： H03H7/38
CPC分类号： H03F3/189 , H03F1/56 , H03F2200/222 , H03F2200/255 , H03F2200/387 , H03F2200/423 , H03F2203/7233
摘要： A small, high performance, multifunctional high frequency circuit that is multiband and multimode compatible reduces loss from a switch formed on the output side of a final stage amplification unit. The final stage amplification unit power amplifies an input signal and outputs an amplified signal. A first matching circuit impedance converts the amplified signal input thereto at a first input impedance, and outputs a first impedance-converted signal at a first output impedance. A control unit that generates a control signal denoting signal path selection information. A switch unit selects one of at least two signal paths based on the control signal, passes the first impedance-converted signal at an on impedance through the selected path, and outputs the pass signal. A second matching circuit impedance converts a pass signal input thereto at a second input impedance, and outputs a second impedance-converted signal at a second output.
摘要翻译： 多频和多模兼容的小型，高性能，多功能高频电路可以减少在最终级放大单元输出侧形成的开关损耗。 最终级放大单元功率放大输入信号并输出放大信号。 第一匹配电路阻抗以第一输入阻抗转换输入到其的放大信号，并输出第一输出阻抗的第一阻抗转换信号。 控制单元，其生成表示信号路径选择信息的控制信号。 开关单元基于控制信号选择至少两个信号路径中的一个，将通过所选路径的导通阻抗的第一阻抗转换信号传递，并输出通过信号。 第二匹配电路阻抗以第二输入阻抗转换输入到其的通过信号，并在第二输出端输出第二阻抗转换信号。
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公开(公告)号：US20100127781A1
公开(公告)日：2010-05-27
申请号：US12535309
申请日：2009-08-04
IPC分类号： H03F3/04
CPC分类号： H03F3/211 , H03F1/0261 , H03F3/19 , H03F3/245 , H03F2200/18 , H03F2200/366 , H03F2200/375
摘要： A radio frequency signal is input to the bases of transistors via respective capacitors, is amplified, and is output from the collectors of the transistors. The emitter of each transistor is grounded. A bias current input from a bias circuit is supplied to the bases of the transistors via respective resistors both during low-output operation and during high-output operation. The collectors of the transistors are connected via an impedance circuit to a bias voltage input terminal. Therefore, during high-output operation, a direct current offset voltage is generated by the impedance circuit based on a portion of a radio frequency signal output from the collectors, thereby further increasing the bias current.
摘要翻译： 射频信号通过相应的电容器输入到晶体管的基极，被放大，并从晶体管的集电极输出。 每个晶体管的发射极接地。 来自偏置电路的偏置电流在低输出操作期间和在高输出操作期间经由相应的电阻器被提供给晶体管的基极。 晶体管的集电极通过阻抗电路连接到偏置电压输入端。 因此，在高输出操作期间，基于从集电极输出的射频信号的一部分，阻抗电路产生直流偏移电压，从而进一步增加偏置电流。
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3.发明申请MATCHING CIRCUIT, AND RADIO-FREQUENCY POWER AMPLIFIER AND MOBILE PHONE INCLUDING THE SAME 审中-公开匹配电路，无线电频率功率放大器和移动电话，包括它们公开(公告)号：US20100079211A1
公开(公告)日：2010-04-01
申请号：US12564126
申请日：2009-09-22
CPC分类号： H03H7/383 , H03F1/565 , H03F3/19 , H03F3/245 , H03F3/60 , H03F2200/387 , H03F2200/391 , H03F2200/417 , H03F2200/423
摘要： Provided is a matching circuit, radio-frequency power amplifier, and mobile phone whereby the second harmonic can be suppressed and the loss of fundamental due to the self resonant frequency of components can be reduced. The output matching circuit includes: a transmission line through which a radio-frequency signal is transmitted; and resonators each of which includes a capacitor. The resonators respectively have (i) first terminals connected to substantially a same connecting point on the transmission line and (ii) second terminals that are grounded.
摘要翻译： 提供了匹配电路，射频功率放大器和移动电话，由此可以抑制二次谐波，并且可以减少由于部件的自谐振频率引起的基波损失。 输出匹配电路包括：发射射频信号的传输线; 以及各自包括电容器的谐振器。 谐振器分别具有（i）连接到传输线上基本上相同的连接点的第一端子和（ii）接地的第二端子。
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公开(公告)号：US20090251220A1
公开(公告)日：2009-10-08
申请号：US12399452
申请日：2009-03-06
IPC分类号： H03F3/04
CPC分类号： H03F3/245 , H03F1/0261 , H03F1/302 , H03F3/19 , H03F2200/18 , H03F2200/27 , H03F2200/447
摘要： A bias circuit operable to supply a bias current to a first transistor includes: a second transistor having a collector terminal connected to a first power supply; a first resistance element having one end connected to an emitter terminal of the second transistor and having the other end connected to a base terminal of the first transistor; a second resistance element having one end connected to the emitter terminal of the second transistor and having the other end connected to ground potential; at least one third resistance element provided between a base terminal of the second transistor and a second power supply; and a plurality of temperature compensation circuits connected to the base terminal of the second transistor which are operable to control a base potential of the second transistor so that the potential falls as a temperature rises.
摘要翻译： 可操作以向第一晶体管提供偏置电流的偏置电路包括：具有连接到第一电源的集电极端子的第二晶体管; 第一电阻元件，其一端连接到第二晶体管的发射极端子，另一端连接到第一晶体管的基极; 第二电阻元件，其一端连接到第二晶体管的发射极端子，另一端连接到地电位; 设置在所述第二晶体管的基极端子和第二电源之间的至少一个第三电阻元件; 以及连接到第二晶体管的基极端子的多个温度补偿电路，其可操作以控制第二晶体管的基极电位，使得电位随温度升高而降低。
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公开(公告)号：US20110003566A1
公开(公告)日：2011-01-06
申请号：US12823415
申请日：2010-06-25
IPC分类号： H01Q11/12
CPC分类号： H01Q23/00
摘要： An RF power amplifier according to the present invention includes: an RF power amplifying element, a first switch provided in a first transmission path for transmitting a first RF signal output from the RF power amplifying element, a second transmission unit which transmits a second RF signal of higher frequency than the first RF signal output from the RF power amplifying element, and a second second-order harmonic trap circuit connected to an output terminal, and the second transmission unit includes a grounded capacitor, a second transmission path, a Band-I matching circuit, a second switch connected in series to the second transmission path, and the second switch connects the second transmission path to the grounded capacitor when the first RF signal is amplified, and connects the second transmission path to the Band-I matching circuit when the second RF signal is amplified.
摘要翻译： 根据本发明的RF功率放大器包括：RF功率放大元件，设置在用于发送从RF功率放大元件输出的第一RF信号的第一传输路径中的第一开关，发送第二RF信号的第二传输单元 具有比从RF功率放大元件输出的第一RF信号高的频率，以及连接到输出端子的第二二次谐波陷波电路，第二传输单元包括接地电容器，第二传输路径，Band-I 匹配电路，与第二传输路径串联连接的第二开关，并且当第一RF信号被放大时，第二开关将第二传输路径连接到接地电容器，并且将第二传输路径连接到Band-I匹配电路，当 第二RF信号被放大。
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6.发明申请RADIO FREQUENCY CIRCUIT, RADIO FREQUENCY POWER AMPLIFIER, AND SEMICONDUCTOR DEVICE 审中-公开无线电频率电路，无线电频率功率放大器和半导体器件公开(公告)号：US20100081410A1
公开(公告)日：2010-04-01
申请号：US12536162
申请日：2009-08-05
IPC分类号： H04B1/16
CPC分类号： H04B1/006 , H04B1/0458 , H04B1/0483
摘要： A radio frequency circuit according to the present invention, is a radio frequency circuit for amplifying a radio frequency signal, the radio frequency circuit comprising: an amplifier circuit for amplifying the radio frequency signal and outputting an amplified signal obtained by the amplification of the radio frequency signal; a load circuit connected to an output of the amplifier circuit; a plurality of transmission lines; a selection circuit for selecting a transmission line among the plurality of transmission lines in accordance with a predetermined parameter of the amplified signal so as to connect the selected transmission line to an output of the load circuit; and a conversion circuit for converting, into a predetermined load impedance, a load impedance looking from the amplifier circuit toward an output side of the amplifier circuit, the conversion being performed in the transmission line selected by the selection circuit.
摘要翻译： 根据本发明的射频电路是用于放大射频信号的射频电路，该射频电路包括：放大器电路，用于放大射频信号并输出通过射频放大获得的放大信号 信号; 连接到放大器电路的输出的负载电路; 多条传输线路; 选择电路，用于根据放大信号的预定参数来选择多条传输线中的传输线，以将所选传输线连接到负载电路的输出; 以及转换电路，用于将从放大器电路看向放大器电路的输出侧的负载阻抗转换为预定负载阻抗，该转换在由选择电路选择的传输线中执行。
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